Existence of Ga-vacancy and as-trimer induced (2 × 2) phases on the GaAs(111)A surface von Thornton, J.M.C., Unsworth, P., Jackson, M.D., Weightman, P., Woolf, D.A.

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A randomised crossover trial of facemask efficacy von Hayden, J T, Smith, N, Woolf, D A, Barry, P W, O’Callaghan, C

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Growth mode of ultrathin Sb layers on Si studied by spectroscopic ellipsometry and Raman scattering von Rossow, U., Frotscher, U., Esser, N., Resch, U., Müller, Th, Richter, W., Woolf, D.A., Williams, R.H.

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A randomised crossover trial of facemask efficacy von Hayden, J.T, Smith, N, Woolf, D.A, Barry, P.W, O'Callaghan, C

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Growth by molecular beam epitaxy of thick films of InxGa1-xAs (x∼0.53) on Si(100) substrates von WESTWOOD, D. I, WOOLF, D. A, CLARK, S. A

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Reconstructions of the GaAs(111)B surface von Thornton, J.M.C., Woolf, D.A., Weightman, P.

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Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry von Rossow, U., Fieseler, T., Zahn, D.R.T., Richter, W., Woolf, D.A., Westwood, D.I., Williams, R.H.

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Core-level photoemission study of the BiGaAs(111)A interface von McGinley, C., Cafolla, A.A., McLoughlin, E., Murphy, B., Teehan, D., Moriarty, P., Woolf, D.A.

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Surface reconstructions and phase transitions on the GaAs(111)B surface von Thornton, J.M.C., Woolf, D.A., Weightman, P.

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Effects of growth interruption upon silicon delta layers in gallium arsenide von Nawaz, R., Elliott, M., Woolf, D.A.

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Sb-induced GaAs(111)B surface reconstructions: success and failure of the electron-counting rule von Moriarty, P., Beton, P.H., Henini, M., Woolf, D.A.

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Development of the [formula omitted] interface at room and low temperature von Thornton, J.M.C., Weightman, P., Bailey, P., Woolf, D.A., Laine, A.D., Evans, D.A.

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Reconstruction dependent adsorption of C 60 on GaAs(111)B von Moriarty, P, Upward, M.D, Ma, Y.-R, Dunn, A.W, Beton, P.H, Teehan, D, Woolf, D.A

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Reconstruction dependent adsorption of C60 on GaAs(111)B von MORIARTY, P, UPWARD, M. D, MA, Y.-R, DUNN, A. W, BETON, P. H, TEEHAN, D, WOOLF, D. A

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Metal overlayers on the MBE-grown ZnSe(001) surface von Evans, D.A., Wolfframm, D., Gnoth, D., Cairns, J., Wright, A.C., Evans, M., Riley, J., Westwood, D., Woolf, D.A.

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Adsorption of Sb on GaAs(111)B studied by photoemission and low energy electron diffraction von Cafolla, A.A., McGinley, C., McLoughlin, E., Hughes, G., Moriarty, P., Dunn, A.W., Ma, Y.-R., Teehan, D., Murphy, B., Downes, S., Woolf, D.A.

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Optical second harmonic generation from Si(111)1 × 1-As and Si(100)2 × 1-As von Kelly, P.V., Tang, Z.-R., Woolf, D.A., Williams, R.H., McGilp, J.F.

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An investigation by spot profile analysis low energy electron diffraction of Si grown on GaAs(001) von Levermann, A.H., Woolf, D.A., Westwood, D.I., Macdonald, J.E.

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Proton nmr studies of betaine excretion in the human neonate: consequences for choline and methyl group supply von Davies, Siân E.C., Woolf, David A., Chalmers, Ronald A., Rafter, Joan E.M., Iles, Richard A.

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Growth by molecular beam epitaxy of thick films of In xGa 1-xAs ( x ∼ 0.53) on Si(100) substrates von Westwood, D.I., Woolf, D.A., Clark, S.A.

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