High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition von Wong, Matthew S, Hwang, David, Alhassan, Abdullah I, Lee, Changmin, Ley, Ryan, Nakamura, Shuji, DenBaars, Steven P

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Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates von Pasayat, Shubhra S., Gupta, Chirag, Wong, Matthew S., Wang, Yifan, Nakamura, Shuji, Denbaars, Steven P., Keller, Stacia, Mishra, Umesh K.

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Light-emitting metalenses and meta-axicons for focusing and beaming of spontaneous emission von Mohtashami, Yahya, DeCrescent, Ryan A., Heki, Larry K., Iyer, Prasad P., Butakov, Nikita A., Wong, Matthew S., Alhassan, Abdullah, Mitchell, William J., Nakamura, Shuji, DenBaars, Steven P., Schuller, Jon. A.

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The micro-LED roadmap: status quo and prospects von Lin, Chien-Chung, Wu, Yuh-Renn, Kuo, Hao-Chung, Wong, Matthew S, DenBaars, Steven P, Nakamura, Shuji, Pandey, Ayush, Mi, Zetian, Tian, Pengfei, Ohkawa, Kazuhiro, Iida, Daisuke, Wang, Tao, Cai, Yuefei, Bai, Jie, Yang, Zhiyong, Qian, Yizhou, Wu, Shin-Tson, Han, Jung, Chen, Chen, Liu, Zhaojun, Hyun, Byung-Ryool, Kim, Jae-Hyun, Jang, Bongkyun, Kim, Hyeon-Don, Lee, Hak-Joo, Liu, Ying-Tsang, Lai, Yu-Hung, Li, Yun-Li, Meng, Wanqing, Shen, Haoliang, Liu, Bin, Wang, Xinran, Liang, Kai-ling, Luo, Cheng-Jhih, Fang, Yen-Hsiang

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Progress of InGaN-Based Red Micro-Light Emitting Diodes von Li, Panpan, Li, Hongjian, Wong, Matthew S., Chan, Philip, Yang, Yunxuan, Zhang, Haojun, Iza, Mike, Speck, James S., Nakamura, Shuji, Denbaars, Steven P.

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Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer von Rienzi, Vincent, Smith, Jordan, Lim, Norleakvisoth, Chang, Hsun-Ming, Chan, Philip, Wong, Matthew S., Gordon, Michael J., DenBaars, Steven P., Nakamura, Shuji

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Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer von Wong, Matthew S., Chan, Philip, Lim, Norleakvisoth, Zhang, Haojun, White, Ryan C., Speck, James S., Denbaars, Steven P., Nakamura, Shuji

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Review-Progress in High Performance III-Nitride Micro-Light-Emitting Diodes von Wong, Matthew S., Nakamura, Shuji, DenBaars, Steven P.

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Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges von Wong, Matthew S., Raj, Aditya, Chang, Hsun-Ming, Rienzi, Vincent, Wu, Feng, Ewing, Jacob J., Trageser, Emily S., Gee, Stephen, Palmquist, Nathan C., Chan, Philip, Kang, Ji Hun, Speck, James S., Mishra, Umesh K., Nakamura, Shuji, DenBaars, Steven P.

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Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation von Ley, Ryan T., Smith, Jordan M., Wong, Matthew S., Margalith, Tal, Nakamura, Shuji, DenBaars, Steven P., Gordon, Michael J.

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Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers von White, Ryan C., Khoury, Michel, Wong, Matthew S., Li, Hongjian, Lynsky, Cheyenne, Iza, Michael, Keller, Stacia, Sotta, David, Nakamura, Shuji, DenBaars, Steven P.

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Semipolar {202¯1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing von Gandrothula, Srinivas, Zhang, Haojun, Shapturenka, Pavel, Anderson, Ryan, Wong, Matthew S., Li, Hongjian, Kamikawa, Takeshi, Nakamura, Shuji, DenBaars, Steven P.

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Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter von Smith, Jordan M., Ley, Ryan, Wong, Matthew S., Baek, Yong Hyun, Kang, Ji Hun, Kim, Chae Hon, Gordon, Michael J., Nakamura, Shuji, Speck, James S., DenBaars, Steven P.

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Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments von Wong, Matthew S, Kearns, Jared A, Lee, Changmin, Smith, Jordan M, Lynsky, Cheyenne, Lheureux, Guillaume, Choi, Hyoshik, Kim, Jinwan, Kim, Chaehon, Nakamura, Shuji, Speck, James S, DenBaars, Steven P

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Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact von Li, Panpan, Li, Hongjian, Zhang, Haojun, Yang, Yunxuan, Wong, Matthew S., Lynsky, Cheyenne, Iza, Mike, Gordon, Michael J., Speck, James S., Nakamura, Shuji, DenBaars, Steven P.

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Color-tunable <10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates von Pasayat, Shubhra S., Ley, Ryan, Gupta, Chirag, Wong, Matthew S., Lynsky, Cheyenne, Wang, Yifan, Gordon, Michael J., Nakamura, Shuji, Denbaars, Steven P., Keller, Stacia, Mishra, Umesh K.

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Progress in III-Nitride Tunnel Junctions for Optoelectronic Devices von Wong, Matthew S., Speck, James S., Nakamura, Shuji, DenBaars, Steven P.

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Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template von Li, Hongjian, Wong, Matthew S, Khoury, Michel, Bonef, Bastien, Zhang, Haojun, Chow, YiChao, Li, Panpan, Kearns, Jared, Taylor, Aidan A, De Mierry, Philippe, Hassan, Zainuriah, Nakamura, Shuji, DenBaars, Steven P

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Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length von Back, Joonho, Wong, Matthew S., Kearns, Jared, DenBaars, Steven P., Weisbuch, Claude, Nakamura, Shuji

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Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition von Li, Panpan, Zhang, Haojun, Li, Hongjian, Iza, Mike, Yao, Yifan, Wong, Matthew S., Palmquist, Nathan, Speck, James S., Nakamura, Shuji, DenBaars, Steven P.

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