Current-induced spin polarization at a single heterojunction von Silov, A. Yu, Blajnov, P. A., Wolter, J. H., Hey, R., Ploog, K. H., Averkiev, N. S.

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Spatial structure of an individual Mn acceptor in GaAs von Yakunin, A M, Silov, A Yu, Koenraad, P M, Wolter, J H, Van Roy, W, De Boeck, J, Tang, J-M, Flatté, M E

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Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs von Offermans, P., Koenraad, P. M., Wolter, J. H., Granados, D., García, J. M., Fomin, V. M., Gladilin, V. N., Devreese, J. T.

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Capping process of InAs∕GaAs quantum dots studied by cross-sectional scanning tunneling microscopy von Gong, Q., Offermans, P., Nötzel, R., Koenraad, P. M., Wolter, J. H.

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Atomic-scale structure and photoluminescence of InAs quantum dots in GaAs and AlAs von OFFERMANS, P, KOENRAAD, P. M, WOLTER, J. H, PIERZ, K, ROY, M, MAKSYM, P. A

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Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy von Bruls, D. M., Vugs, J. W. A. M., Koenraad, P. M., Salemink, H. W. M., Wolter, J. H., Hopkinson, M., Skolnick, M. S., Long, Fei, Gill, S. P. A.

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Formation of InAs wetting layers studied by cross-sectional scanning tunneling microscopy von Offermans, P., Koenraad, P. M., Nötzel, R., Wolter, J. H., Pierz, K.

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Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy von Gong, Q., Nötzel, R., van Veldhoven, P. J., Eijkemans, T. J., Wolter, J. H.

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Wavelength-tunable (1.55-μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy von Anantathanasarn, S., Nötzel, R., van Veldhoven, P. J., Eijkemans, T. J., Wolter, J. H.

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Role of the continuum background for carrier relaxation in InAs quantum dots von BOGAART, E. W, HAVERKORT, J. E. M, MANO, T, VAN LIPPEN, T, NÖTZEL, R, WOLTER, J. H

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Self-organized lattice of ordered quantum dot molecules von Lippen, T. v., Nötzel, R., Hamhuis, G. J., Wolter, J. H.

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Formation of InAs quantum dot arrays on GaAs (100) by self-organized anisotropic strain engineering of a (In,Ga)As superlattice template von Mano, T., Nötzel, R., Hamhuis, G. J., Eijkemans, T. J., Wolter, J. H.

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Stacking and polarization control of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots von Anantathanasarn, S., Nötzel, R., van Veldhoven, P. J., van Otten, F. W. M., Eijkemans, T. J., Wolter, J. H.

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Formation of columnar (In,Ga)As quantum dots on GaAs(100) von He, J., Nötzel, R., Offermans, P., Koenraad, P. M., Gong, Q., Hamhuis, G. J., Eijkemans, T. J., Wolter, J. H.

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Direct imaging of self-organized anisotropic strain engineering for improved one-dimensional ordering of (In,Ga)As quantum dot arrays von Mano, T., Nötzel, R., Hamhuis, G. J., Eijkemans, T. J., Wolter, J. H.

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All-optical switching due to state filling in quantum dots von Prasanth, R., Haverkort, J. E. M., Deepthy, A., Bogaart, E. W., van der Tol, J. J. G. M., Patent, E. A., Zhao, G., Gong, Q., van Veldhoven, P. J., Nötzel, R., Wolter, J. H.

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Ordered quantum dot molecules and single quantum dots formed by self-organized anisotropic strain engineering von van Lippen, T., Nötzel, R., Hamhuis, G. J., Wolter, J. H.

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Spatial structure of Mn-Mn acceptor pairs in GaAs von YAKUNIN, A. M, SILOV, A. Yu, KOENRAAD, P. M, TANG, J.-M, FLATTD, M. E, VAN ROY, W, DE BOECK, J, WOLTER, J. H

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Ultrafast carrier capture at room temperature in InAs ∕ InP quantum dots emitting in the 1.55 μ m wavelength region von Bogaart, E. W., Nötzel, R., Gong, Q., Haverkort, J. E. M., Wolter, J. H.

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Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy von Bruls, D. M., Koenraad, P. M., Salemink, H. W. M., Wolter, J. H., Hopkinson, M., Skolnick, M. S.

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