NaK bound–free and bound–bound 4 3Σ + → a 3Σ + emission von McGeehan, B.M., Ashman, S., Wolfe, C.M., Steinhardt, R., Monaco, M.L., Huennekens, J., Hickman, A.P.

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High-temperature carrier transport in n-type epitaxial GaAs von Nichols, K.H., Yee, Camellia M.L., Wolfe, C.M.

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Antiphase domain boundary suppression in chalcopyrite-on-sphalerite epitaxy von Davis, G.A., Muller, M.W., Wolfe, C.M.

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Hall coefficient factor for polar mode scattering in n-type GaAs von Stillman, G.E., Wolfe, C.M., Dimmock, J.O.

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Precision verification of effective mass theory for shallow donors in GaAs von Stillman, G.E., Larsen, David M., Wolfe, C.M., Brandt, R.C.

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Identification of exciton-neutral donor complexes in the photoluminescence of high purity GaAs von Rossi, J.A., Wolfe, C.M., Stillman, G.E., Dimmock, J.O.

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Isolation of junction devices in GaAs using proton bombardment von Foyt, A.G., Lindley, W.T., Wolfe, C.M., Donnelly, J.P.

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Identification of donor species in high-purity GaAs using optically pumped submillimeter lasers von Fetterman, H.R., Waldman, J., Wolfe, C.M., Stillman, G.E., Parker, C.D.

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Recombination radiation from landau states in impactionized GaAs von Waldman, J., Chang, T.S., Fetterman, H.R., Stillman, G.E., Wolfe, C.M.

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Electrical characterization of epitaxial layers von Stillman, G.E., Wolfe, C.M.

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An Improved Method for the Electrochemical C‐V Profiling of Indium Phosphide von Green, R. T., Walker, D. K., Wolfe, C. M.

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Below bandgap emission and absorption in ZnSnP 2 /GaAs heterojunctions von Patten, E.A., Davis, G.A., Hsieh, S.J., Wolfe, C.M.

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Compositional dependence of effective masses in n-type GaxIn1−xAs alloys using submillimeter cyclotron resonance von Fetterman, H., Waldman, J., Wolfe, C.M.

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TA-B2 monolithic GaAs waveguide detector array with automatic response control von Shade, G.F., Wolfe, C.M.

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Compositional dependence of effective masses in n-type Ga xIn 1−xAs alloys using submillimeter cyclotron resonance von Fetterman, H., Waldman, J., Wolfe, C.M.

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Magnetospectroscopy of shallow donors in GaAs von Stillman, G.E., Wolfe, C.M., Dimmock, J.O.

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WP-B4 impurity gradients and interfacial regions in epitaxial GaAs von Nichols, K.H., Wolfe, C.M.

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Hall coefficient factor for polar mode scattering in n-type GaAs von Stillman, G.E., Wolfe, C.M., Dimmock, J.O.

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A model of Cr in GaAs von Rohdin, H., Muller, M.W., Wolfe, C.M.

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Below bandgap emission and absorption in ZnSnP2/GaAs heterojunctions von Patten, E.A., Davis, G.A., Hsieh, S.J., Wolfe, C.M.

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