Recent progress on 1.55-μm dilute-nitride lasers von BANK, Seth R, BAE, Hopil, GODDARD, Lynford L, YUEN, Homan B, WISTEY, Mark A, KUDRAWIEC, Robert, HARRIS, James S

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Low-threshold continuous-wave 1.5-μm GaInNAsSb lasers grown on GaAs von BANK, Seth R, WISTEY, Mark A, GODDARD, Lynford L, YUEN, Homan B, LORDI, Vincenzo, HARRIS, James S

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Room-temperature continuous-wave 1.55μm GalnNAsSb laser on GaAs von BANK, S. R, BAE, H. P, YUEN, H. B, WISTEY, M. A, GODDARD, L. L, HARRIS, J. S

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The role of antimony on properties of widely varying GaInNAsSb compositions von Yuen, Homan B., Bank, Seth R., Bae, Hopil, Wistey, Mark A., Harris, James S.

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The role of Sb in the MBE growth of (GaIn)(NAsSb) von Volz, Kerstin, Gambin, Vincent, Ha, Wonill, Wistey, Mark A., Yuen, Homan, Bank, Seth, Harris, James S.

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Recombination, gain, band structure, efficiency, and reliability of 1.5-μm GaInNAsSb/GaAs lasers von Goddard, Lynford L., Bank, Seth R., Wistey, Mark A., Yuen, Homan B., Rao, Zhilong, Harris, James S.

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Nitrogen plasma optimization for high-quality dilute nitrides von Wistey, Mark A., Bank, Seth R., Yuen, Homan B., Bae, Hopil, Harris, James S.

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Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance von Kudrawiec, R., Sitarek, P., Misiewicz, J., Bank, S. R., Yuen, H. B., Wistey, M. A., Harris, James S.

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Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3–1.55μm von Yuen, Homan B., Bank, Seth R., Wistey, Mark A., Harris, James S., Moto, Akihiro

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Effects of growth temperature on the structural and optical properties of 1.55μm GaInNAsSb quantum wells grown on GaAs von Bank, Seth R., Yuen, Homan B., Wistey, Mark A., Lordi, Vincenzo, Bae, Hopil P., Harris, James S.

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On the temperature sensitivity of 1.5- mu m GaInNAsSb lasers von Bank, SR, Goddard, L L, Wistey, MA, Yuen, H B, Harris, JS Jr

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Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications von Bank, Seth R., Yuen, Homan B., Bae, Hopil, Wistey, Mark A., Harris, James S.

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Improved optical quality of GaNAsSb in the dilute Sb limit von Yuen, Homan B., Bank, Seth R., Wistey, Mark A., Harris, James S., Seong, Maeng-Je, Yoon, Seokhyun, Kudrawiec, Robert, Misiewicz, Jan

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Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells von Yuen, Homan B., Bank, Seth R., Bae, Hopil, Wistey, Mark A., Harris, James S.

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Band-gap discontinuity in GaN0.02As0.87Sb0.11∕GaAs single-quantum wells investigated by photoreflectance spectroscopy von Kudrawiec, R., Ryczko, K., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., Bae, H. P., Harris, James S.

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Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes von Bank, Seth R., Yuen, Homan B., Bae, Hopil, Wistey, Mark A., Moto, Akihiro, Harris, James S.

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Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11∕GaAs single quantum wells von Kudrawiec, R., Motyka, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., Bae, H. P., Harris, James S.

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High-performance 1.5 μm GaInNAsSb lasers grown on GaAs von BANK, S. R, WISTEY, M. A, GODDARD, L. L, YUEN, H. B, BAE, H. P, HARRIS, J. S

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GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.460 μm von Wistey, M. A., Bank, S. R., Yuen, H. B., Goddard, L. L., Harris, J. S.

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Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 μm von KUDRAWIEC, R, GLADYSIEWICZ, M, MISIEWICZ, J, YUEN, H. B, BANK, S. R, WISTEY, M. A, BAE, H. P, HARRIS, James S

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