Contactless evaluation of semi-insulating GaAs wafer resistivity using the time-dependent charge measurement von Stibal, R, Windscheif, J, Jantz, W

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Identification of AsGa antisites in plastically deformed GaAs von Weber, E. R., Ennen, H., Kaufmann, U., Windscheif, J., Schneider, J., Wosinski, T.

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Elastic constants and refractive index of boron phosphide von Wettling, W., Windscheif, J.

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Photoresponse of the AsGa antisite defect in as-grown GaAs von BAEUMLER, M, KAUFMANN, U, WINDSCHEIF, J

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Direct and fast comparison of near-infrared absorption and photoluminescence topography of semiinsulating GaAs wafers von Wettling, W., Windscheif, J.

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High resolution carrier temperature and lifetime topography of semi-insulating GaAs using spatially and spectrally resolved photoluminescence von WANG, Z. M, WINDSCHEIF, J, AS, D. J, JANTZ, W

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Spatial distribution of residual shallow acceptors in undoped semi-insulating GaAs von WAGNER, J, WETTLING, W, WINDSCHEIF, J, ROTHEMUND, W

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Rare earth activated luminescence in InP, GaP and GaAs von Ennen, H., Kaufmann, U., Pomrenke, G., Schneider, J., Windscheif, J., Axmann, A.

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Variation of material parameters along the growth direction of liquid encapsulated Czochralski grown GaAs ingots von Jantz, W., Stibal, R., Windscheif, J., Wagner, J.

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New omnipresent electron paramagnetic resonance signal in as-grown semi-insulating liquid encapsulation Czochralski GaAs von KAUFMANN, U, BAEUMLER, M, WINDSCHEIF, J, WILKENING, W

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New quantitative line scanning technique for homogeneity assessment of semi-insulating GaAs wafers von WINDSCHEIF, J, BAEUMLER, M, KAUFMANN, U

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Nondestructive topographic evaluation of ion implanted layers on GaAs substrates by optical absorption von Windscheif, J., Wettling, W., Jantz, W.

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Photoluminescence topography of shallow impurities in GaAs epilayers grown by metalorganic vapor phase epitaxy von WANG, Z. M, AS, D. J, WINDSCHEIF, J, BACHEM, K. H, JANTZ, W

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Optical parameters for the MgO:Ni2+ laser system von Iverson, M. V., Windscheif, J. C., Sibley, W. A.

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Low-temperature photoluminescence topography of MOCVD-grown InGaP, AlGaAs and AlGaAs/GaAs single quantum wells von As, D J, Korf, S, Wang, Z M, Windscheif, J, Bachem, K H, Jantz, W

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Origin of the magnetic-circular-dichroism absorption of undoped as-grown GaAs von KAUFMANN, U, WINDSCHEIF, J

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Exciton relaxation by intervalley scattering in AgBr von Windscheif, J., Stolz, H., von der Osten, W.

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Dispersive phonon modes by resonant Raman scattering in AgBr von Windscheif, J., Stolz, H., von der Osten, W.

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Annealing behavior of the 0.8 eV luminescence in undoped semiinsulating GaAs von Windscheif, J., Ennen, H., Kaufmann, U., Schneider, J., Kimura, T.

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Photoluminescence excitation spectroscopy on InP:Yb von WAGNER, J, WINDSCHEIF, J, ENNEN, H

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