AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate von WINDHORN, T. H, METZE, G. M, TSAUR, B.-Y, FAN, J. C. C

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Room-temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate von WINDHORN, T. H, METZE, G. M

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Monolithic GaAs/AlGaAs diode laser/deflector devices for light emission normal to the surface von WINDHORN, T. H, GOODHUE, W. D

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Monolithic two-dimensional surface-emitting arrays of GaAs/AlGaAs diode lasers von DONNELLY, J. P, GOODHUE, W. D, WINDHORN, T. H, BAILEY, R. J, LAMBERT, S. A

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Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET's von Choi, H.K., Turner, G.W., Windhorn, T.H., Bor-Yeu Tsaur

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21 dBm erbium power amplifier pumped by a diode-pumped Nd:YAG laser von Grubb, S.G., Humer, W.F., Cannon, R.S., Windhorn, T.H., Vendetta, S.W., Sweeney, K.L., Leilabady, P.A., Barnes, W.L., Jedrzejewski, K.P., Townsend, J.E.

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Electron transport in InP at high electric fields von WIND HORN, T. H, COOK, L. W, HAASE, M. A, STILLMAN, G. E

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High field temperature dependent electron drift velocities in GaAs von Windhorn, T. H., Roth, T. J., Zinkiewicz, L. M., Gaddy, O. L., Stillman, G. E.

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Al0.5Ga0.5As-GaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition von Milano, R. A., Windhorn, T. H., Anderson, E. R., Stillman, G. E., Dupuis, R. D., Dapkus, P. D.

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Composition dependence of the influence of lattice mismatch on surface morphology in LPE growth of InGaAsP on (100) -InP von Feng, M., Tashima, M. M., Windhorn, T. H., Stillman, G. E.

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The influence of LPE growth techniques on the alloy composition of InGaAsP von Feng, M., Cook, L. W., Tashima, M. M., Windhorn, T. H., Stillman, G. E.

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VA-5 Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET's von Choi, H.K., Turner, G.W., Windhorn, T.H., Tsaur, B.-Y.

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VIB-8 GaAs MESFET's and AlGaAs double-heterostructure diode lasers fabricated on monolithic GaAs/Si substrates von Choi, H.K., Windhorn, T.H., Tsaur, B.-Y., Metze, G.M., Turner, G.W., Fan, J.C.C.

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Temperature dependent electron velocity-field characteristics for In0.53Ga0.47AS at high electric fields von Windhorn, T. H., Cook, L. W., Stillman, G. E.

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Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15–1.31-μm spectral region von Feng, M., Windhorn, T. H., Tashima, M. M., Stillman, G. E.

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High-field electron transport in In x Ga1− x As y P1− y (λ g =1.2 μm) von Windhorn, T. H., Cook, L. W., Stillman, G. E.

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The electron velocity-field characteristic for n-In(0.53)Ga(0.47)As at 300 K von Windhorn, T H, Cook, L W, Stillman, G E

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Electron velocity-field characteristic for n-In sub(0.53)Ga sub(0.47)As at 300 K von Windhorn, T H, Cook, L W, Stillman, G E

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Temperature Dependent Electron Velocity-Field Characteristics for In sub 0.53 Ga sub 0.47 As at High Electric Fields von Windhorn, T H, Cook, L W, Stillman, G E

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The electron velocity-field characteristic for n-In0.53Ga0.47As at 300 K von Windhorn, T.H., Cook, L.W., Stillman, G.E.

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