2.5-mW single-mode operation of 1.55-μm buried tunnel junction VCSELs von Ortsiefer, M., Baydar, S., Windhorn, K., Bohm, G., Rosskopf, J., Shau, R., Ronneberg, E., Hofmann, W., Amann, M.-C.

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2.5-mW single-mode operation of 1.55-[mu]m buried tunnel junction VCSELs von M. Ortsiefer, M. Ortsiefer, S. Baydar, S. Baydar, K. Windhorn, K. Windhorn, G. Bohm, G. Bohm, J. Rosskopf, J. Rosskopf, R. Shau, R. Shau, E. Ronneberg, E. Ronneberg, W. Hofmann, W. Hofmann, M.-C. Amann, M.-C. Amann

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2.5-mW single-mode operation of 1.55-mum buried tunnel junction VCSELs von Ortsiefer, M, Baydar, S, Windhorn, K, Bohm, G, Rosskopf, J, Shau, R, Ronneberg, E, Hofmann, W, Amann, M-C

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2.5-mW single-mode operation of 1.55-/spl mu/m buried tunnel junction VCSELs von Ortsiefer, M., Baydar, S., Windhorn, K., Bohm, G., Rosskopf, J., Shau, R., Ronneberg, E., Hofmann, W., Amann, M.-C.

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Controlling molecular ground-state dissociation by optimizing vibrational ladder climbing von Witte, T., Hornung, T., Windhorn, L., Proch, D., de Vivie-Riedle, R., Motzkus, M., Kompa, K. L.

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Getting ahead of IVR: A demonstration of mid-infrared induced molecular dissociation on a sub-statistical time scale von Windhorn, Lars, Yeston, Jake S., Witte, Thomas, Fuß, Werner, Motzkus, Marcus, Proch, Detlev, Kompa, Karl-Ludwig, Moore, C. Bradley

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Molecular dissociation by mid-IR femtosecond pulses von Windhorn, L., Witte, T., Yeston, J.S., Proch, D., Motzkus, M., Kompa, K.L., Fuß, W.

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Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET's von Choi, H.K., Turner, G.W., Windhorn, T.H., Bor-Yeu Tsaur

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21 dBm erbium power amplifier pumped by a diode-pumped Nd:YAG laser von Grubb, S.G., Humer, W.F., Cannon, R.S., Windhorn, T.H., Vendetta, S.W., Sweeney, K.L., Leilabady, P.A., Barnes, W.L., Jedrzejewski, K.P., Townsend, J.E.

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VA-5 Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET's von Choi, H.K., Turner, G.W., Windhorn, T.H., Tsaur, B.-Y.

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VIB-8 GaAs MESFET's and AlGaAs double-heterostructure diode lasers fabricated on monolithic GaAs/Si substrates von Choi, H.K., Windhorn, T.H., Tsaur, B.-Y., Metze, G.M., Turner, G.W., Fan, J.C.C.

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High-Field Transport in GaAs, InP, and InxGa1-xAsyP1-y von Windhorn, T. H., Cook, L. W., Roth, T. J., Stillman, G. E.

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