Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts von Fuchsberger, Andreas, Wind, Lukas, Sistani, Masiar, Behrle, Raphael, Nazzari, Daniele, Aberl, Johannes, Prado Navarrete, Enrique, Vukŭsić, Lada, Brehm, Moritz, Schweizer, Peter, Vogl, Lilian, Maeder, Xavier, Weber, Walter M.

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A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States von Fuchsberger, Andreas, Wind, Lukas, Nazzari, Daniele, Kühberger, Larissa, Popp, Daniel, Aberl, Johannes, Navarrete, Enrique Prado, Brehm, Moritz, Vogl, Lilian, Schweizer, Peter, Lellig, Sebastian, Maeder, Xavier, Sistani, Masiar, Weber, Walter M.

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Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures von Böckle, Raphael, Sistani, Masiar, Bažíková, Martina, Wind, Lukas, Sadre‐Momtaz, Zahra, den Hertog, Martien I., Murphey, Corban G. E., Cahoon, James F., Weber, Walter M.

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Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi‐Wire Channels von Wind, Lukas, Behrle, Raphael, den Hertog, Martien I., Murphey, Corban G. E., Cahoon, James F., Sistani, Masiar, Weber, Walter M.

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A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance von Fuchsberger, Andreas, Wind, Lukas, Nazzari, Daniele, Dobler, Alexandra, Aberl, Johannes, Prado Navarrete, Enrique, Brehm, Moritz, Vogl, Lilian, Schweizer, Peter, Lellig, Sebastian, Maeder, Xavier, Sistani, Masiar, Weber, Walter M.

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Realization of a Complementary Full Adder Based on Reconfigurable Transistors von Wind, Lukas, Maierhofer, Moritz, Fuchsberger, Andreas, Sistani, Masiar, Weber, Walter M.

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Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors von Fuchsberger, Andreas, Wind, Lukas, Nazzari, Daniele, Navarrete, Enrique Prado, Aberl, Johannes, Brehm, Moritz, Sistani, Masiar, Weber, Walter M.

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Reconfigurable Si Field-Effect Transistors With Symmetric On-States Enabling Adaptive Complementary and Combinational Logic von Wind, Lukas, Fuchsberger, Andreas, Demirkiran, Ozgur, Vogl, Lilian, Schweizer, Peter, Maeder, Xavier, Sistani, Masiar, Weber, Walter M.

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Monolithic Metal–Semiconductor–Metal Heterostructures Enabling Next-Generation Germanium Nanodevices von Wind, Lukas, Sistani, Masiar, Song, Zehao, Maeder, Xavier, Pohl, Darius, Michler, Johann, Rellinghaus, Bernd, Weber, Walter M, Lugstein, Alois

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Plasmon-assisted polarization-sensitive photodetection with tunable polarity for integrated silicon photonic communication systems von Song, Zehao, Sistani, Masiar, Wind, Lukas, Pohl, Darius, Rellinghaus, Bernd, Weber, Walter M, Lugstein, Alois

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Monolithic and Single-Crystalline Aluminum–Silicon Heterostructures von Wind, Lukas, Böckle, Raphael, Sistani, Masiar, Schweizer, Peter, Maeder, Xavier, Michler, Johann, Murphey, Corban G.E., Cahoon, James, Weber, Walter M.

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Composition Dependent Electrical Transport in Si1-x Gex Nanosheets with Monolithic Single-Elementary Al Contacts von Wind, Lukas, Sistani, Masiar, Böckle, Raphael, Smoliner, Jürgen, Vukŭsić, Lada, Aberl, Johannes, Brehm, Moritz, Schweizer, Peter, Maeder, Xavier, Michler, Johann, Fournel, Frank, Hartmann, Jean-Michel, Weber, Walter M

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Composition Dependent Electrical Transport in Si1−x Ge x Nanosheets with Monolithic Single‐Elementary Al Contacts von Wind, Lukas, Sistani, Masiar, Böckle, Raphael, Smoliner, Jürgen, Vukŭsić, Lada, Aberl, Johannes, Brehm, Moritz, Schweizer, Peter, Maeder, Xavier, Michler, Johann, Fournel, Frank, Hartmann, Jean‐Michel, Weber, Walter M.

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Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single‐Elementary Al Contacts von Wind, Lukas, Sistani, Masiar, Böckle, Raphael, Smoliner, Jürgen, Vukŭsić, Lada, Aberl, Johannes, Brehm, Moritz, Schweizer, Peter, Maeder, Xavier, Michler, Johann, Fournel, Frank, Hartmann, Jean‐Michel, Weber, Walter M.

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Composition Dependent Electrical Transport in Si 1-x Ge x Nanosheets with Monolithic Single-Elementary Al Contacts von Wind, Lukas, Sistani, Masiar, Böckle, Raphael, Smoliner, Jürgen, Vukŭsić, Lada, Aberl, Johannes, Brehm, Moritz, Schweizer, Peter, Maeder, Xavier, Michler, Johann, Fournel, Frank, Hartmann, Jean-Michel, Weber, Walter M

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Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts von Sistani, Masiar, Böckle, Raphael, Wind, Lukas, Eysin, Kilian, Maeder, Xavier, Schweizer, Peter, Michler, Johann, Lugstein, Alois, Weber, Walter M.

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A Runtime Reconfigurable Ge Field-Effect Transistor With Symmetric On-States von Fuchsberger, Andreas, Wind, Lukas, Nazzari, Daniele, Kuhberger, Larissa, Popp, Daniel, Aberl, Johannes, Navarrete, Enrique Prado, Brehm, Moritz, Vogl, Lilian, Schweizer, Peter, Lellig, Sebastian, Maeder, Xavier, Sistani, Masiar, Weber, Walter M.

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Ferroelectrically-enhanced Schottky barrier transistors for Logic-in-Memory applications von Nazzari, Daniele, Wind, Lukas, Sistani, Masiar, Mayr, Dominik, Kim, Kihye, Weber, Walter M

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Ferroelectrically-enhanced Schottky barrier transistors for Logic-in-Memory applications von Nazzari, Daniele, Wind, Lukas, Sistani, Masiar, Mayr, Dominik, Kim, Kihye, Weber, Walter M

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Out-of-equilibrium charge redistribution in a copper-oxide based superconductor by time-resolved X-ray photoelectron spectroscopy von Puntel, Denny, Kutnyakhov, Dmytro, Wenthaus, Lukas, Scholz, Markus, Wind, Nils O., Heber, Michael, Brenner, Günter, Gu, Genda, Cava, Robert J., Bronsch, Wibke, Cilento, Federico, Parmigiani, Fulvio, Pressacco, Federico

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