Electrical characteristics of flash sintering: thermal runaway of Joule heating von Todd, R.I., Zapata-Solvas, E., Bonilla, R.S., Sneddon, T., Wilshaw, P.R.

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Preliminary investigation of flash sintering of SiC von Zapata-Solvas, E., Bonilla, S., Wilshaw, P.R., Todd, R.I.

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Identification of colloidal silica polishing induced contamination in silicon von Tweddle, D., Hamer, P., Shen, Z., Moody, M.P., Wilshaw, P.R.

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Dislocation locking by nitrogen impurities in FZ-silicon von Giannattasio, A., Senkader, S., Falster, R.J., Wilshaw, P.R.

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Electrically tunable Si-based THz photomodulator using dielectric/polymer surface gating von Romain, X., Wilshaw, P.R., Stantchev, R.I., Miao, T., Mou, S., Niewelt, T., McNab, S., Pain, S.L., Grant, N.E., Bonilla, R.S., Pickwell-MacPherson, E., Murphy, J.D.

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Initial in vitro interaction of osteoblasts with nano-porous alumina von Karlsson, M, Pålsgård, E, Wilshaw, P.R, Di Silvio, L

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Specimen preparation methods for elemental characterisation of grain boundaries and isolated dislocations in multicrystalline silicon using atom probe tomography von Lotharukpong, C., Tweddle, D., Martin, T.L., Wu, M., Grovenor, C.R.M., Moody, M.P., Wilshaw, P.R.

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The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers von Giannattasio, A., Senkader, S., Azam, S., Falster, R.J., Wilshaw, P.R.

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Chemical etching to dissolve dislocation cores in multicrystalline silicon von Gregori, N.J., Murphy, J.D., Sykes, J.M., Wilshaw, P.R.

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Nitrogen in silicon: Diffusion at 500–750 °C and interaction with dislocations von Alpass, C.R., Murphy, J.D., Falster, R.J., Wilshaw, P.R.

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Cathodoluminescence assessment of annealed silicon and a novel technique for estimating minority carrier lifetime in silicon von Fraser, K.J., Falster, R.J., Wilshaw, P.R.

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Nitrogen in silicon: Transport and mechanical properties von Murphy, J.D., Alpass, C.R., Giannattasio, A., Senkader, S., Falster, R.J., Wilshaw, P.R.

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Piezospectroscopic measurement of the stress field around an indentation crack tip in ruby using SEM cathodoluminescence von Todd, R.I., Stowe, D., Galloway, S., Barnes, D., Wilshaw, P.R.

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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments von Murphy, J.D., Senkader, S., Falster, R.J., Wilshaw, P.R.

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Schottky diode back contacts for high frequency capacitance studies on semiconductors von Mallik, Kanad, Falster, R.J., Wilshaw, P.R.

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Near-band gap luminescence at room temperature from dislocations in silicon von Stowe, D.J., Galloway, S.A., Senkader, S., Mallik, Kanad, Falster, R.J., Wilshaw, P.R.

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Long term stability of c-Si surface passivation using corona charged SiO2 von Bonilla, R, Reichel, C, Hermle, M, Harmer, P, Wilshaw, P.R

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Corona field effect surface passivation of n-type IBC cells von Bonilla, R.S, Reichel, C, Hermle, M, Wilshaw, P.R

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Semi-insulating Czochralski-silicon for Radio Frequency Applications von Mallik, K., de Groot, C.H., Ashburn, P., Wilshaw, P.R.

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Extrinsic passivation of silicon surfaces for solar cells von Bonilla, R.S, Reichel, C, Hermle, M, Martins, G, Wilshaw, P.R

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