Effect of fluorine implantation dose on boron thermal diffusion in silicon von El Mubarek, H. A. W., Bonar, J. M, Dilliway, G. D., Ashburn, P., Karunaratne, M., Willoughby, A. F., Wang, Y., Hemment, P. L. F., Price, R., Zhang, J., Ward, P.

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Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials-some comments von KARUNARATNE, M. S. A, BONAR, J. M, ASHBURN, P, WILLOUGHBY, A. F. W

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Design and processing of porous materials for electronic applications von Willoughby, A.F.W

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Potability Evaluation of Selected River Waters in Ebonyi State, Nigeria von Awu, JI, Ogunjirin, OA, Willoughby, FA, Adewumi, AA

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Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si1-xGex von EL MUBAREK, H. A. W, KARUNARATNE, M, BONAR, J. M, DILLIWAY, G. D, WANG, Y, HEMMENT, P. L. F, WILLOUGHBY, A. F, ASHBURN, P

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Zinc diffusion tellurium doped gallium antimonide von CONIBEER, G. J, WILLOUGHBY, A. F. B, HARDINGHAM, C. M, SHARMA, V. K. M

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Antimony and boron diffusion in SiGe and Si under the influence of injected point defects von Bonar, J M, Willoughby, A F, W, Dan, A H, Mcgregor, B M, Lerch, W, Loeffelmacher, D, Cooke, G A, Dowsett, M G

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Stress characterization of device layers and the underlying Si1-xGex virtual substrate with high-resolution micro-Raman spectroscopy von CHEN, W. M, MCNALLY, P. J, DILLIWAY, G. D. M, BONAR, J, TUOMI, T, WILLOUGHBY, A. F. W

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Diffusion of boron in heavily doped n- and p-type silicon von WILLOUGHBY, A. F. W, EVANS, A. G. R, CHAMP, P, YALLUP, K. J, GODFREY, D. J, DOWSETT, M. G

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Self-diffusion in gallium arsenide von PALFREY, H. D, BROWN, M, WILLOUGHBY, A. F. W

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Hardness anisotropy of III-V semiconducting compounds and alloys von WATTS, D. Y, WILLOUGHBY, A. F. W

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Characterization of morphology and defects in silicon-germanium virtual substrates von Dilliway, G D, M, Willoughby, A F, W, Bonar, J M

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Boron diffusion across silicon–silicon germanium boundaries von Lever, R. F., Bonar, J. M., Willoughby, A. F. W.

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Growth method, composition, and defect structure dependence of mercury diffusion in CdxHg1-xTe von ARCHER, N. A, PALFREY, H. D, WILLOUGHBY, A. F. W

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The diffusion of gold in 'semi-infinite' single crystals of silicon von Huntley, F. A., Willoughby, A. F. W.

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Effect of point defect injection on diffusion of boron in silicon and silicon–germanium in the presence of carbon von Karunaratne, M. S. A., Willoughby, A. F. W., Bonar, J. M., Zhang, J., Ashburn, P.

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Effect of point defect injection on diffusion of boron in siliconand silicon-germanium in the presence of carbon von Karunaratne, M. S. A., Willoughby, A. F. W., Bonar, J. M., Zhang, J., Ashburn, P.

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The Effect of Dislocation Density on the Diffusion of Gold in Thin Silicon Slices von Huntley, F. A., Willoughby, A. F. W.

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Indentation fracture in the In1-xGaxAsyP1-y/InP system and its effect on microhardness anisotropy characteristics von WATTS, D. Y, WILLOUGHBY, A. F. W

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Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si sub(1-x)Ge sub(x) von Mubarek, HAWE, Karunaratne, M, Bonar, J M, Dilliway, G D, Wang, Y, Hemment, PLF, Willoughby, A F, Ashburn, P

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