Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth von Brown, D F, Shinohara, K, Williams, A, Milosavljevic, I, Grabar, R, Hashimoto, P, Willadsen, P J, Schmitz, A, Corrion, A L, Kim, S, Regan, D, Butler, C M, Burnham, S D, Micovic, M

Volltext

Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With fT of 260 GHz von SHINOHARA, K, REGAN, D, OHOKA, A, ASBECK, P. M, MICOVIC, M, MILOSAVLJEVIC, I, CORRION, A. L, BROWN, D. F, WILLADSEN, P. J, BUTLER, C, SCHMITZ, A, KIM, S, LEE, V

Volltext

Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm g and 112-GHz f von Corrion, A L, Shinohara, K, Regan, D, Milosavljevic, I, Hashimoto, P, Willadsen, P J, Schmitz, A, Wheeler, D C, Butler, C M, Brown, D, Burnham, S D, Micovic, M

Volltext

Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm gm and 112-GHz fT von CORRION, A. L, SHINOHARA, K, BURNHAM, S. D, MICOVIC, M, REGAN, D, MILOSAVLJEVIC, I, HASHIMOTO, P, WILLADSEN, P. J, SCHMITZ, A, WHEELER, D. C, BUTLER, C. M, BROWN, D

Volltext

W-Band GaN MMIC with 842 mW output power at 88 GHz von Micovic, M, Kurdoghlian, A, Shinohara, K, Burnham, S, Milosavljevic, I, Hu, M, Corrion, A, Fung, A, Lin, R, Samoska, L, Kangaslahti, P, Lambrigtsen, B, Goldsmith, P, Wong, W S, Schmitz, A, Hashimoto, P, Willadsen, P J, Chow, D H

Volltext

GaN enhancement/depletion-mode FET logic for mixed signal applications von MICOVIC, M, TSEN, T, WONG, W. S, CHOW, D, HU, M, HASHIMOTO, P, WILLADSEN, P. J, MILOSAVLJEVIC, I, SCHMITZ, A, ANTCLIFFE, M, ZHENDER, D, MOON, J. S

Volltext

GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio von Micovic, M., Kurdoghlian, A., Moyer, H.P., Hashimoto, P., Hu, M., Antcliffe, M., Willadsen, P.J., Wong, W.S., Bowen, R., Milosavljevic, I., Yoon, Y., Schmitz, A., Wetzel, M., McGuire, C., Hughes, B., Chow, D.H.

Volltext

Vertically scaled GaN/AlN DH-HEMTs with regrown n+GaN ohmic contacts by MBE von Milosavljevic, I, Shinohara, K, Regan, D, Burnham, S, Corrion, A, Hashimoto, P, Wong, D, Hu, M, Butler, C, Schmitz, A, Willadsen, P J, Micovic, M

Volltext

Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With f of 260 GHz von Shinohara, K., Regan, D., Milosavljevic, I., Corrion, A. L., Brown, D. F., Willadsen, P. J., Butler, C., Schmitz, A., Kim, S., Lee, V., Ohoka, A., Asbeck, P. M., Micovic, M.

Volltext

GaN MMICs for RF power applications in the 50 GHz to 110 GHz frequency range von Micovic, M., Kurdoghlian, A., Hashimoto, P., Hu, M., Antcliffe, M., Willadsen, P. J., Wong, W. S., Bowen, R., Milosavljevic, I., Yoon, Y., Schmitz, A., Wetzel, M., Chow, D. H.

Volltext

92-96 GHz GaN power amplifiers von Micovic, M., Kurdoghlian, A., Margomenos, A., Brown, D. F., Shinohara, K., Burnham, S., Milosavljevic, I., Bowen, R., Williams, A.J., Hashimoto, P., Grabar, R., Butler, C., Schmitz, A., Willadsen, P. J., Chow, D. H.

Volltext

GaN MMIC technology for microwave and millimeter-wave applications von Micovic, M., Kurdoghlian, A., Moyer, H.P., Hashimoto, P., Schmitz, A., Milosavljevic, I., Willadsen, P.J., Wong, W.-S., Duvall, J., Hu, M., Wetzel, M., Chow, D.H.

Volltext

Ka-band MMIC power amplifier in GaN HFET technology von Micovic, M., Kurdoghlian, A., Moyer, H.P., Hashimoto, P., Schmitz, A., Milosavjevic, I., Willadesn, P.J., Wong, W.-S., Duvall, J., Hu, M., Delaney, M.J., Chow, D.H.

Volltext

High-Speed AlN/GaN MOS-HFETs With Scaled ALD \hbox\hbox Gate Insulators von Corrion, A. L., Shinohara, K., Regan, D., Milosavljevic, I., Hashimoto, P., Willadsen, P. J., Schmitz, A., Kim, S. J., Butler, C. M., Brown, D., Burnham, S. D., Micovic, M.

Volltext

High-Speed AlN/GaN MOS-HFETs With Scaled ALD [Formula Omitted] Gate Insulators von Corrion, A. L, Shinohara, K, Regan, D, Milosavljevic, I, Hashimoto, P, Willadsen, P. J, Schmitz, A, Kim, S. J, Butler, C. M, Brown, D, Burnham, S. D, Micovic, M

Volltext

High-Speed AlN/GaN MOS-HFETs With Scaled ALD hbox Al 2 hbox O 3 Gate Insulators von Corrion, AL, Shinohara, K, Regan, D, Milosavljevic, I, Hashimoto, P, Willadsen, P J, Schmitz, A, Kim, S J, Butler, C M, Brown, D, Burnham, S D, Micovic, M

Volltext

Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With [Formula Omitted] of 260 GHz von Shinohara, K, Regan, D, Milosavljevic, I, Corrion, A. L, Brown, D. F, Willadsen, P. J, Butler, C, Schmitz, A, Kim, S, Lee, V, Ohoka, A, Asbeck, P. M, Micovic, M

Volltext

Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With f T of 260 GHz von Shinohara, K, Regan, D, Milosavljevic, I, Corrion, AL, Brown, D F, Willadsen, P J, Butler, C, Schmitz, A, Kim, S, Lee, V, Ohoka, A, Asbeck, P M, Micovic, M

Volltext

High-Speed AIN/GaN MOS-HFETs With Scaled ALD Al2O3 Gate Insulators von CORRION, A. L, SHINOHARA, K, BURNHAM, S. D, MICOVIC, M, REGAN, D, MILOSAVLJEVIC, I, HASHIMOTO, P, WILLADSEN, P. J, SCHMITZ, A, KIM, S. J, BUTLER, C. M, BROWN, D

Volltext

Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm g m and 112-GHz f T von Corrion, AL, Shinohara, K, Regan, D, Milosavljevic, I, Hashimoto, P, Willadsen, P J, Schmitz, A, Wheeler, D C, Butler, C M, Brown, D, Burnham, S D, Micovic, M

Volltext