III‐Nitride Micro‐LEDs for Efficient Emissive Displays von Wierer, Jonathan J., Tansu, Nelson

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Comparison between blue lasers and light-emitting diodes for future solid-state lighting von Wierer Jr, Jonathan J., Tsao, Jeffrey Y., Sizov, Dmitry S.

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Advantages of III-nitride laser diodes in solid-state lighting von Wierer Jr, Jonathan J., Tsao, Jeffrey Y.

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Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers von Armstrong, Andrew M., Bryant, Benjamin N., Crawford, Mary H., Koleske, Daniel D., Lee, Stephen R., Wierer, Jonathan J.

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III-nitride quantum dots for ultra-efficient solid-state lighting von Wierer Jr, Jonathan J., Tansu, Nelson, Fischer, Arthur J., Tsao, Jeffrey Y.

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Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots von Wei, Xiongliang, Al Muyeed, Syed Ahmed, Xue, Haotian, Wierer, Jr, Jonathan J

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III-nitride core-shell nanowire arrayed solar cells von Wierer Jr, Jonathan J, Li, Qiming, Koleske, Daniel D, Lee, Stephen R, Wang, George T

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Toward Smart and Ultra‐efficient Solid‐State Lighting von Tsao, Jeffrey Y., Crawford, Mary H., Coltrin, Michael E., Fischer, Arthur J., Koleske, Daniel D., Subramania, Ganapathi S., Wang, G. T., Wierer, Jonathan J., Karlicek, Robert F.

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Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array von Riley, James R, Padalkar, Sonal, Li, Qiming, Lu, Ping, Koleske, Daniel D, Wierer, Jonathan J, Wang, George T, Lauhon, Lincoln J

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Structural and optical characterization of thin AlInN films on c-plane GaN substrates von Xue, Haotian, Palmese, Elia, Song, Renbo, Chowdhury, Md Istiaque, Strandwitz, Nicholas C., Wierer, Jonathan J.

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Vertical GaN Power Diodes With a Bilayer Edge Termination von Dickerson, Jeramy R., Allerman, Andrew A., Bryant, Benjamin N., Fischer, Arthur J., King, Michael P., Moseley, Michael W., Armstrong, Andrew M., Kaplar, Robert J., Kizilyalli, Isik C., Aktas, Ozgur, Wierer, Jonathan J.

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The potential of III-nitride laser diodes for solid-state lighting von Wierer Jr, Jonathan J., Tsao, Jeffrey Y., Sizov, Dmitry S.

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Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal–Oxide–Semiconductor Devices von Shvilberg, Liron, Mimura, Takanori, Xue, Haotian, Wierer, Jonathan J., Paisley, Elizabeth A., Heinrich, Helge, Ihlefeld, Jon F.

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Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes von Moseley, Michael, Allerman, Andrew, Crawford, Mary, Wierer, Jonathan J., Smith, Michael, Biedermann, Laura

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Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers von Al Muyeed, Syed Ahmed, Sun, Wei, Wei, Xiongliang, Song, Renbo, Koleske, Daniel D., Tansu, Nelson, Wierer, Jonathan J.

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III -nitride photonic-crystal light-emitting diodes with high extraction efficiency von David, Aurelien, Wierer, Jonathan J, Megens, Mischa M

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Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N von Armstrong, Andrew M., Moseley, Michael W., Allerman, Andrew A., Crawford, Mary H., Wierer, Jonathan J.

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Ultra-Broadband Optical Gain in III-Nitride Digital Alloys von Sun, Wei, Tan, Chee-Keong, Wierer, Jonathan J., Tansu, Nelson

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Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates von Palmese, Elia, Xue, Haotian, Pavlidis, Spyridon, Wierer, Jonathan J.

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Effect of interface roughness on Auger recombination in semiconductor quantum wells von Tan, Chee-Keong, Sun, Wei, Wierer, Jonathan J., Tansu, Nelson

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