Trapping effects and microwave power performance in AlGaN/GaN HEMTs von Binari, S.C., Ikossi, K., Roussos, J.A., Kruppa, W., Doewon Park, Dietrich, H.B., Koleske, D.D., Wickenden, A.E., Henry, R.L.

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Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN von Koleske, D.D, Wickenden, A.E, Henry, R.L, Twigg, M.E

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Resistivity control in unintentionally doped GaN films grown by MOCVD von Wickenden, A.E., Koleske, D.D., Henry, R.L., Twigg, M.E., Fatemi, M.

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GaN decomposition in H2 and N2 at MOVPE temperatures and pressures von KOLESKE, D. D, WICKENDEN, A. E, HENRY, R. L, CULBERTSON, J. C, TWIGG, M. E

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Sensitivity of Carbon Nanotube Transistors to a Charged Dielectric Coating von Pennington, G., Ervin, M.H., Wickenden, A.E.

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Fabrication and characterization of GaN FETs von Binari, S.C., Kruppa, W., Dietrich, H.B., Kelner, G., Wickenden, A.E., Freitas, J.A.

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GaN FETs for microwave and high-temperature applications von Binari, Steven C., Doverspike, K., Kelner, G., Dietrich, H.B., Wickenden, A.E.

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High resolution X-ray diffraction and X-ray topography study of GaN on sapphire von Chaudhuri, J, Ng, M.H, Koleske, D.D, Wickenden, A.E, Henry, R.L

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GaN decomposition in H 2 and N 2 at MOVPE temperatures and pressures von Koleske, D.D., Wickenden, A.E., Henry, R.L., Culbertson, J.C., Twigg, M.E.

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The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation von Bermudez, V.M, Koleske, D.D, Wickenden, A.E

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Kinetic study of the oxidation of gallium nitride in dry air von WOLTER, S. D, MOHNEY, S. E, VENUGOPALAN, H, WICKENDEN, A. E, KOLESKE, D. D

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HREELS of H/GaN(0001): evidence for Ga termination von Bellitto, V.J., Thoms, B.D., Koleske, D.D., Wickenden, A.E., Henry, R.L.

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High-field transport studies of gan von Barker, J.M., Akis, R., Ferry, D.K., Goodnick, S.M., Thornton, T.J., Koleske, D.D., Wickenden, A.E., Henry, R.L.

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The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys von Wickenden, A. E., Koleske, D. D., Henry, R. L., Gorman, R. J., Twigg, M. E., Fatemi, M., Freitas, J. A., Moore, W. J.

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Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures von Barker, J.M, Ferry, D.K, Goodnick, S.M, Koleske, D.D, Wickenden, A.E, Henry, R.L

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Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) von Glaser, E.R, Carlos, W.E, Braga, G.C.B, Freitas, J.A, Moore, W.J, Shanabrook, B.V, Wickenden, A.E, Koleske, D.D, Henry, R.L, Bayerl, M.W, Brandt, M.S, Obloh, H, Kozodoy, P, DenBaars, S.P, Mishra, U.K, Nakamura, S, Haus, E, Speck, J.S, Van Nostrand, J.E, Sanchez, M.A, Calleja, E, Ptak, A.J, Myers, T.H, Molnar, R.J

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Quantum Electron Transport in Carbon Nanotubes: Velocity Oscillations and Length Dependence von Akturk, A., Pennington, G.W., Goldsman, N., Wickenden, A.E.

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Desorption of hydrogen from GaN(0001) observed by HREELS and ELS von Bellitto, V.J., Yang, Y., Thoms, B.D., Koleske, D.D., Wickenden, A.E., Henry, R.L.

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Raman scattering, photoluminescence, and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates von Benyoucef, M, Kuball, M, Koleske, D.D, Wickenden, A.E, Henry, R.L, Fatemi, M, Twigg, M.E

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Optically detected magnetic resonance of shallow donor – shallow acceptor and deep (2.8–3.2 eV) recombination from Mg-doped GaN von Glaser, E.R, Kennedy, T.A, Freitas, J.A, Shanabrook, B.V, Wickenden, A.E, Koleske, D.D, Henry, R.L, Obloh, H

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