Small-group work and assessment in a PBL curriculum: a qualitative and quantitative evaluation of student perceptions of the process of working in small groups and its assessment von Willis, S.C., Jones, A., Bundy, C., Burdett, K., Whitehouse, C.R., O'Neill, P.A.

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Modulated-beam mass spectrometry studies of the MOMBE growth of (100) GaAs and In0.1Ga0.9As von Martin, T., Whitehouse, C.R.

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Small group learning in the final year of a medical degree: a quantitative and qualitative evaluation von MacPherson, R., Jones, A., Whitehouse, C.R., O'Neill, P.A.

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Molecular dynamics simulation of (100)InGaAs/GaAs strained-layer relaxation processes von Ashu, P.A., Jefferson, J.H., Cullis, A.G., Hagston, W.E., Whitehouse, C.R.

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Real-time laser-light scattering studies of surface topography development during GaAs MBE growth von Smith, G.W., Pidduck, A.J., Whitehouse, C.R., Glasper, J.L., Spowart, J.

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In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system von Lacey, G., Whitehouse, C.R., Parbrook, P.J., Cullis, A.G., Keir, A.M., Möck, P., Johnson, A.D., Smith, G.W., Clark, G.F., Tanner, B.K., Martin, T., Lunn, B., Hogg, J.H.C., Emeny, M.T., Murphy, B., Bennett, S.

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Partial strain relaxation in (In,Ga)As epilayers on GaAs by means of twin formation von Mizuno, K., Möck, P., Tanner, B.K., Lacey, G., Whitehouse, C.R., Smith, G.W., Keir, A.M.

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Selective area two-dimensional electron gas structures and in situ ohmic contacts patterned by focused ion beam doping during molecular beam epitaxial growth von Thompson, J.H., Jones, G.A.C., Ritchie, D.A., Linfield, E.H., Houlton, M., Smith, G.W., Whitehouse, C.R.

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A photoluminescence study of indium desorption from strained Ga1-xInxAs/GaAs von EMENY, M. T, HOWARD, L. K, HOMEWOOD, K. P, LAMBKIN, J. D, WHITEHOUSE, C. R

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A micromachined magnetostrictive pressure sensor using magneto-optical interrogation von Karl, W.J., Powell, A.L., Watts, R., Gibbs, M.R.J., Whitehouse, C.R.

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Dopant patterning of MBE GaAs during growth by very low energy focussed tin ion beam deposition von Thompson, J.H., Ritchie, D.A., Jones, G.A.C., Linfield, E.H., Frost, J.E.F., Churchill, A.C., Smith, G.W., Lee, G., Houlton, M., Whitehouse, C.R.

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The effect of annealing on structural defects in bulk InP von Brown, G.T., Whitehouse, C.R., Woodward, J.

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Static and growing InP and InAs surfaces : reflection-anisotropy spectroscopy under the conditions of solid-source MBE von OZANYAN, K. B, PARBROOK, P. J, HOPKINSON, M, WHITEHOUSE, C. R

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7a-S-1 GaAs基板上のInGaAs薄膜における歪み緩和 von 水野, 薫, P., MaecK, B.K.., Tanner, G., Lacey, C.R., Whitehouse, G.W.G., Smith, A.M., Keir

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Modulated-beam mass spectrometry studies of the MOMBE growth of (100) GaAs and In 0.1Ga 0.9As von Martin, T., Whitehouse, C.R.

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Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy von Parbrook, P.J., Ozanyan, K.B., Hopkinson, M., Whitehouse, C.R., Sobiesierski, Z., Westwood, D.I.

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In-situ X-ray imaging of III–V strained-layer relaxation processes von Whitehouse, C.R., Cullis, A.G., Barnett, S.J., Usher, B.F., Clark, G.F., Keir, A.M., Tanner, B.K., Lunn, B., Hogg, J.C.H., Johnson, A.D., Lacey, G., Spirkl, W., Hagston, W.E., Jefferson, J.H., Ashu, P., Smith, G.W., Martin, T.

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Measurements by X-ray topography of the critical thickness of ZnSe grown on GaAs von O'Donnell, C.B., Lacey, G., Horsburgh, G., Cullis, A.G., Whitehouse, C.R., Parbrook, P.J., Meredith, W., Galbraith, I., Möck, P., Prior, K.A., Cavenett, B.C.

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Growth mechanism studies in CBE/MOMBE von Martin, T., Whitehouse, C.R., Lane, P.A.

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CCDs for X-ray topography at synchrotrons von Castelli, C.M, Allinson, N.M, Barnett, S.J, Clark, G.F, Moon, K, Whitehouse, C.R, Wells, A

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