Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas von Nyakiti, L.O, Myers-Ward, R. L, Wheeler, V. D, Imhoff, E. A, Bezares, F.J, Chun, H, Caldwell, J. D, Friedman, A. L, Matis, B. R, Baldwin, J. W, Campbell, P. M, Culbertson, J. C, Eddy, C. R, Jernigan, G. G, Gaskill, D. K

Volltext

Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process von Nath, A., Koehler, A. D., Jernigan, G. G., Wheeler, V. D., Hite, J. K., Hernández, S. C., Robinson, Z. R., Garces, N. Y., Myers-Ward, R. L., Eddy, C. R., Gaskill, D. K., Rao, M. V.

Volltext

Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC von Xu, P., Qi, D., Schoelz, J.K., Thompson, J., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K., Neek-Amal, M., Peeters, F.M.

Volltext

Plasma-based chemical modification of epitaxial graphene with oxygen functionalities von Hernández, S.C., Wheeler, V.D., Osofsky, M.S., Jernigan, G.G., Nagareddy, V.K., Nath, A., Lock, E.H., Nyakiti, L.O., Myers-Ward, R.L., Sridhara, K., Horsfall, A.B., Eddy, C.R., Gaskill, D.K., Walton, S.G.

Volltext

Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface von Xu, P., Ackerman, M.L., Barber, S.D., Schoelz, J.K., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

Volltext

Investigation of the Epitaxial Graphene/p-SiC Heterojunction von Anderson, T. J., Hobart, K. D., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., Caldwell, J. D., Bezares, F. J., Jernigan, G. G., Tadjer, M. J., Imhoff, E. A., Koehler, A. D., Gaskill, D. K., Eddy, C. R., Kub, F. J.

Volltext

Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene von Nyakiti, L.O., Wheeler, V.D., Garces, N.Y., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

Volltext

Passivation of aluminum mirrors with SF6- or NF3-based plasmas von de Marcos, L V Rodriguez, Wheeler, V D, Batkis, M F, del Hoyo, J G, Jin, E N, Walton, S G, Wollack, E J, Quijada, M A, Boris, D R

Volltext

Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth von Lai, K.Y., Paskova, T., Wheeler, V.D., Grenko, J.A., Johnson, M.A.L., Udwary, K., Preble, E.A., Evans, K.R.

Volltext

Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene von Huang, J, Alexander-Webber, J A, Janssen, T J B M, Tzalenchuk, A, Yager, T, Lara-Avila, S, Kubatkin, S, Myers-Ward, R L, Wheeler, V D, Gaskill, D K, Nicholas, R J

Volltext

Functionalized graphene as a model system for the two-dimensional metal-insulator transition von Osofsky, M. S., Hernández, S. C., Nath, A., Wheeler, V. D., Walton, S. G., Krowne, C. M., Gaskill, D. K.

Volltext

Determining the nature of the gap in semiconducting graphene von Prestigiacomo, J. C., Nath, A., Osofsky, M. S., Hernández, S. C., Wheeler, V. D., Walton, S. G., Gaskill, D. K.

Volltext

Epitaxial graphene surface preparation for atomic layer deposition of Al2O3 von Garces, N. Y., Wheeler, V. D., Hite, J. K., Jernigan, G. G., Tedesco, J. L., Nepal, Neeraj, Eddy, C. R., Gaskill, D. K.

Volltext

Membrane amplitude and triaxial stress in twisted bilayer graphene deciphered using first-principles directed elasticity theory and scanning tunneling microscopy von Neek-Amal, M., Xu, P., Qi, D., Thibado, P. M., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., Eddy, C. R., Gaskill, D. K., Peeters, F. M.

Volltext

Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H–SiC Epitaxial Layers von Myers-Ward, R. L, Mahadik, N. A, Wheeler, V. D, Nyakiti, L. O, Stahlbush, R. E, Imhoff, E. A, Hobart, K. D, Eddy, C. R, Gaskill, D. K

Volltext

Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC von Tadjer, M. J., Anderson, T. J., Myers-Ward, R. L., Wheeler, V. D., Nyakiti, L. O., Robinson, Z., Eddy, C. R., Gaskill, D. K., Koehler, A. D., Hobart, K. D., Kub, F. J.

Volltext

Performance evaluation of atomic layer deposited TiO2/TiN nanolaminates used as infrared photodetectors von Scarel, G., Kokhan, O., Wheeler, V. D.

Volltext

Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy von Abadier, M., Myers-Ward, R. L., Mahadik, N. A., Stahlbush, R. E., Wheeler, V. D., Nyakiti, L. O., Eddy, C. R., Gaskill, D. K., Song, H., Sudarshan, T. S., Picard, Y. N., Skowronski, M.

Volltext

Detection of polar chemical vapors using epitaxial graphene grown on SiC (0001) von Nagareddy, V. K., Chan, H. K., Hernández, S. C., Wheeler, V. D., Myers-Ward, R. L., Nyakiti, L. O., Eddy, C. R., Walton, S. G., Goss, J. P., Wright, N. G., Gaskill, D. K., Horsfall, A. B.

Volltext

Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures von Tadjer, M. J., Anderson, T. J., Hobart, K. D., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., Gaskill, D. K., Eddy, C. R., Kub, F. J., Calle, F.

Volltext