Extraction of the point-spread function in electron-beam lithography using a cross geometry von Schefzyk, D., Biesinger, D.E.F., Wharam, D.A.

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Hydrogen silsesquioxane electron beam lithography for ultra-small single electron transistors in silicon on insulator von Daves, W., Ruoff, M., Fleischer, M., Wharam, D.A., Kern, D.P.

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Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices’ Variability? von Jehl, X., Roche, B., Sanquer, M., Voisin, B., Wacquez, R., Deshpande, V., Previtali, B., Vinet, M., Verduijn, J., Tettamanzi, G.C., Rogge, S., Kotekar-Patil, D., Ruoff, M., Kern, D., Wharam, D.A., Belli, M., Prati, E., Fanciulli, M.

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Single electron switching in a parallel quantum dot von Hofmann, F, Heinzel, T, Wharam, DA, Kotthaus, JP, Böhm, G, Klein, W, Tränkle, G, Weimann, G

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Spacing and width of Coulomb blockade peaks in a silicon quantum dot von Abusch-Magder, David, Simmel, F, Wharam, D.A, Kastner, M.A, Kotthaus, J.P

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Quantized conductance in a [formula omitted] split-gate device and impurity-related magnetotransport phenomena von Többen, D, Wharam, D.A, Abstreiter, G, Kotthaus, J.P, Schäffler, F

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Microwave modulation of Coulomb-blockade oscillations in a quantum dot von Fujii, K., Gödel, W., Wharam, D.A., Manus, S., Kotthaus, J.P., Böhm, G., Klein, W., Tränkle, G., Weimann, G.

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Gate-controlled conductance oscillations in small one-dimensional electron cavities von de Aguiar, F.M., Wharam, D.A., Heinzel, T., Lorke, A., Kotthaus, J.P.

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量子ドットにおけるクーロン振動へのマイクロ波効果 von 藤井, 研一, W., Godel, D.A., Wharam, S., Manus, J.P., Kotthaus, G., Bohm, W., Klein, G., Trankle, G., Weimann

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27p-X-4 量子ドットにおけるクーロン振動へのマイクロ波効果 von 藤井, 研一, W., Godel, D.A., Wharam, S., Manus, J.P., Kotthaus, G., Bohm, W., Klein, G., Trankle, G., Weimann

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Ballistic electron transport in quasi-one-dimensional systems von Wharam, D.A., Newbury, R., Pepper, M., Hasko, D.G., Ahmed, H., Frost, J.E.F., Ritchie, D.A., Peacock, D.C., Jones, G.A.C., Thornton, T.J., Ekenberg, U.

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Towards quantum cellular automata operation in silicon: transport properties of silicon multiple dot structures von Single, C., Augke, R., Prins, F.E., Wharam, D.A., Kern, D.P.

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One-dimensional transport phenomena in GaAs heterojunction structures von Pepper, M., Brown, R.J., Smith, C.G., Wharam, D.A., Kelly, M.J., Newbury, R., Ahmed, H., Hasko, D.G., Peacock, D.C., Frost, J.E.F., Ritchie, D.A., Jones, G.A.C.

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Physics and fabrication of one-dimensional sub-micron semiconducting channels von Wharam, D.A., Hasko, D.G., Pepper, M., Ahmed, H., Frost, J.E.F., Peacock, D.C., Ritchie, D.A., Jones, G.A.C.

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Landau-level interplay in InGaAs double quantum wells von Fresser, H.S., Prins, F.E., Wharam, D.A., Kern, D.P., Böttcher, J., Künzel, H.

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High magnetic field investigations of quantum dots von Wharam, D.A., Heinzel, T., Manus, S., Kotthaus, J.P., Böhm, G., Klein, W., Tränkle, G., Weimann, G.

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Effect of microwaves on Coulomb oscillation in a quantum dot von Fujii, K., Godel, W., Wharam, D.A., Manus, S., Kotthaus, J.P., Bohm, G., Klein, W., Trankle, G., Weimann, G.

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27p-X-4 Effect of microwaves on Coulomb oscillation in a quanatum dot von Fujii, K., Godel, W., Wharam, D.A., Manus, S., Kotthaus, J.P., Bohm, G., Klein, W., Trankle, G., Weimann, G.

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