Electronic structure of perylene on Au studied by ultraviolet photoelectron spectroscopy and density functional theory von Kang, S.J., Yi, Y., Cho, K., Jeong, K., Yoo, K.-H., Whang, C.N.

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The influence of thin insulating lithium fluoride inserted pentacene layer on pentacene-based organic thin-film transistor von Park, D.S., Jeong, I.S., Kim, C.Y., Jang, W.C., Jeong, K., Yoo, K.-H., Whang, C.N., Lee, Y.S., Kim, S.O.

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Compositional changes in the surface layers of the Cu3Au(1 0 0) below the bulk transition temperature von OH, D. H, KANG, H. J, CHAE, K. H, WHANG, C. N, KING, B. V, O'CONNOR, D. J, MOON, D. W

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Energy level diagrams of C 60/pentacene/Au and pentacene/C 60/Au von Kang, S.J., Yi, Y., Kim, C.Y., Cho, S.W., Noh, M., Jeong, K., Whang, C.N.

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Effects of thermal annealing a glass surface in air von Jang, H.K, Whangbo, S.W, Choi, Y.K, Jeong, K, Whang, C.N, Wang, C.H, Choi, D.J, Lee, S

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Effect of oxidized Al prelayer for the growth of polycrystalline Al2O3 films on Si using ionized beam deposition von WHANGBO, S. W, CHOI, Y. K, JANG, H. K, CHUNG, Y. D, LYO, I. W, WHANG, C. N

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Atomic structure of two-dimensional Ag layer grown on Si(001)-(2×1) at room temperature von Park, N.G, Kim, Y.W, Cho, W.S, Kim, J.Y, Choi, D.S, Jeong, K, Chae, K.H, Whang, C.N

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Soft X-ray fluorescence measurements of irradiated polymer films von Winarski, R.P., Ederer, D.L., Pivin, J.-C., Kurmaev, E.Z., Shamin, S.N., Moewes, A., Chang, G.S., Whang, C.N., Endo, K., Ida, T.

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Uniaxial in-plane magnetic anisotropy of a CoPt thin film induced by ion irradiation von Chang, G. S., Moewes, A., Kim, S. H., Lee, J., Jeong, K., Whang, C. N., Kim, D. H., Shin, S.-C.

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Study of the L3 edges of ion-beam-mixed PdCu alloys by X-ray absorption spectroscopy von Lee, Y.S., Whang, C.N., Jeon, Y., Choi, B.S., Han, T.J., Woo, J.J., Croft, M.

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Energy level alignment between C 60 and Al using ultraviolet photoelectron spectroscopy von Seo, J.H., Kang, S.J., Kim, C.Y., Cho, S.W., Yoo, K.-H., Whang, C.N.

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Soft X-ray fluorescence measurements of irradiated polyimide and polycarbosilane films von Kurmaev, E.Z, Winarski, R.P, Ederer, D.L, Pivin, J.-C, Shamin, S.N, Moewes, A, Callcott, T.A, Chang, G.S, Whang, C.N

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Heteroepitaxial growth of Y2O3 films on Si(100) by reactive ionized cluster beam deposition von Choi, S.C., Cho, M.H., Whangbo, S.W., Whang, C.N., Hong, C.E., Kim, N.Y., Jeon, J.S., Lee, S.I., Lee, M.Y.

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Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures von Kim, H.Y., Kim, J.H., Kim, Y.J., Chae, K.H., Whang, C.N., Song, J.H., Im, S.

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Fabrication and characterization of the pentacene thin film transistor with a Gd2O3 gate insulator von KANG, S. J, CHUNG, K. B, PARK, D. S, KIM, H. J, CHOI, Y. K, JANG, M. H, NOH, M, WHANG, C. N

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Initial adsorption structure of ethylene on Si(0 0 1) surface at room temperature von Seo, J.H., Park, J.Y., Whang, C.N., Kim, S.S., Choi, D.S., Chae, K.H.

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Comparison of visible photoluminescence from Si ion-irradiated SiO 2/Si/SiO 2 films fabricated by ion beam sputtering deposition and electron beam evaporation von Kim, H.B., Son, J.H., Whang, C.N., Chae, K.H.

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Structural transition of crystalline Y2O3 film on Si(111) with substrate temperature von CHO, M.-H, KO, D.-H, JEONG, K, WHANGBO, S. W, WHANG, C. N, CHOI, S. C, CHO, S. J

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Atomic arrangement of Al-induced clusters on Si(0 0 1) surface at high temperature von Seo, J.H., Park, J.Y., Jung, S.K., Yoo, K.-H., Whang, C.N., Kim, S.S., Choi, D.S., Chae, K.H.

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Influence of 2-mercapto-5-nitrobenzimidazole treatment on the electronic characteristics of bottom-contact organic field-effect transistors von Park, D.S., Jang, W.C., Cho, S.W., Seo, J.H., Jeong, I.S., Kim, T.W., Chang, G.S., Moewes, A., Chae, K.H., Jeong, K., Yoo, K.-H., Whang, C.N.

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