Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds von Sochacki, Tomasz, Amilusik, Mikolaj, Lucznik, Boleslaw, Fijalkowski, Michal, Weyher, Janusz Ludwik, Sadovyi, Bohdan, Kamler, Grzegorz, Nowak, Grzegorz, Litwin-Staszewska, Elzbieta, Khachapuridze, Aleksander, Grzegory, Izabella, Kucharski, Robert, Zajac, Marcin, Doradzinski, Roman, Bockowski, Michal

Volltext