Extended Defects in SiC: Selective Etching and Raman Study von Weyher, J. L., Tiberj, A., Nowak, G., Culbertson, J. C., Freitas, J. A.

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Chemical Etching of GaN in KOH Solution: Role of Surface Polarity and Prior Photoetching von Weyher, J. L, van Dorp, D. H, Conard, T, Nowak, G, Levchenko, I, Kelly, J. J

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Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds von Amilusik, M., Sochacki, T., Lucznik, B., Fijalkowski, M., Smalc-Koziorowska, J., Weyher, J.L., Teisseyre, H., Sadovyi, B., Bockowski, M., Grzegory, I.

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Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds von SOCHACKI, T, AMILUSIK, M, FIJALKOWSKI, M, LUCZNIK, B, WEYHER, J. L, GRZEGORY, I, KUCHARSKI, R, IWINSKA, M, BOCKOWSKI, M

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Principles of electroless photoetching of non-uniformly doped GaN: Kinetics and defect revealing von Weyher, J.L., van Dorp, D.H., Kelly, J.J.

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Orthodox etching of HVPE-grown GaN von Weyher, J.L., Lazar, S., Macht, L., Liliental-Weber, Z., Molnar, R.J., Müller, S., Sivel, V.G.M., Nowak, G., Grzegory, I.

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HVPE-GaN growth on misoriented ammonothermal GaN seeds von Sochacki, T., Amilusik, M., Lucznik, B., Fijalkowski, M., Weyher, J.L., Nowak, G., Sadovyi, B., Kamler, G., Kucharski, R., Iwinska, M., Grzegory, I., Bockowski, M.

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On the hydrophobicity of modified Ga-polar GaN surfaces von Dzięcielewski, I., Weyher, J. L., Dzwolak, W.

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Photo-etching of GaN: Revealing nano-scale non-homogeneities von Weyher, J.L., Smalc-Koziorowska, J., Bańkowska, M., Dzięcielewski, I., Marona, Ł., Perlin, P.

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Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange von Weyher, J.L., Sochacki, T., Amilusik, M., Fijałkowski, M., Łucznik, B., Jakieła, R., Staszczak, G., Nikolenko, A., Strelchuk, V., Sadovyi, B., Boćkowski, M., Grzegory, I.

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Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates von Kucharski, R., Zajac, M., Puchalski, A., Sochacki, T., Bockowski, M., Weyher, J.L., Iwinska, M., Serafinczuk, J., Kudrawiec, R., Siemiątkowski, Z.

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Modulated optical sensitivity with nanostructured gallium nitride von Wilkins, S. J., Slomski, M. J., Paskova, T., Weyher, J. L., Ivanisevic, A.

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Imaging extended non-homogeneities in HVPE grown GaN with Kelvin Probe Microscopy and photo-etching von Nowak, G., Weyher, J.L., Khachapuridze, A., Grzegory, I.

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Defect sensitive etching of nitrides: appraisal of methods von Weyher, J. L.

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Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration von Grzegory, I., Boćkowski, M., łucznik, B., Weyher, J., Litwin-Staszewska, E., Konczewicz, L., Sadovyi, B., Nowakowski, P., Porowski, S.

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Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism von Ashraf, H., Kudrawiec, R., Weyher, J.L., Serafinczuk, J., Misiewicz, J., Hageman, P.R.

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Defect-selective etching of GaN in a modified molten bases system von Kamler, G, Weyher, J.L, Grzegory, I, Jezierska, E, Wosiński, T

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The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy von Lewandowska, R., Weyher, J.L., Kelly, J.J., Konczewicz, L., Lucznik, B.

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Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits von Weyher, J. L., Ashraf, H., Hageman, P. R.

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Revealing extended defects in HVPE-grown GaN von Weyher, J.L., łucznik, B., Grzegory, I., Smalc-Koziorowska, J., Paskova, T.

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