Extended Defects in SiC: Selective Etching and Raman Study von Weyher, J. L., Tiberj, A., Nowak, G., Culbertson, J. C., Freitas, J. A.

Volltext

Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds von Amilusik, M., Sochacki, T., Lucznik, B., Fijalkowski, M., Smalc-Koziorowska, J., Weyher, J.L., Teisseyre, H., Sadovyi, B., Bockowski, M., Grzegory, I.

Volltext

Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds von SOCHACKI, T, AMILUSIK, M, FIJALKOWSKI, M, LUCZNIK, B, WEYHER, J. L, GRZEGORY, I, KUCHARSKI, R, IWINSKA, M, BOCKOWSKI, M

Volltext

Orthodox etching of HVPE-grown GaN von Weyher, J.L., Lazar, S., Macht, L., Liliental-Weber, Z., Molnar, R.J., Müller, S., Sivel, V.G.M., Nowak, G., Grzegory, I.

Volltext

HVPE-GaN growth on misoriented ammonothermal GaN seeds von Sochacki, T., Amilusik, M., Lucznik, B., Fijalkowski, M., Weyher, J.L., Nowak, G., Sadovyi, B., Kamler, G., Kucharski, R., Iwinska, M., Grzegory, I., Bockowski, M.

Volltext

Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange von Weyher, J.L., Sochacki, T., Amilusik, M., Fijałkowski, M., Łucznik, B., Jakieła, R., Staszczak, G., Nikolenko, A., Strelchuk, V., Sadovyi, B., Boćkowski, M., Grzegory, I.

Volltext

Chemical Etching of GaN in KOH Solution: Role of Surface Polarity and Prior Photoetching von Weyher, J. L, van Dorp, D. H, Conard, T, Nowak, G, Levchenko, I, Kelly, J. J

Volltext

Imaging extended non-homogeneities in HVPE grown GaN with Kelvin Probe Microscopy and photo-etching von Nowak, G., Weyher, J.L., Khachapuridze, A., Grzegory, I.

Volltext

Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism von Ashraf, H., Kudrawiec, R., Weyher, J.L., Serafinczuk, J., Misiewicz, J., Hageman, P.R.

Volltext

The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy von Lewandowska, R., Weyher, J.L., Kelly, J.J., Konczewicz, L., Lucznik, B.

Volltext

Thick GaN layers grown by HVPE: Influence of the templates von Ashraf, H., Weyher, J.L., van Dreumel, G.W.G., Gzregorzyck, A., Hageman, P.R.

Volltext

Defect-selective etching of GaN in a modified molten bases system von Kamler, G, Weyher, J.L, Grzegory, I, Jezierska, E, Wosiński, T

Volltext

Anodic etching of SiC in alkaline solutions von van Dorp, D H, Weyher, J L, Kelly, J J

Volltext

Defect-selective etching of SiC von Weyher, J. L., Lazar, S., Borysiuk, J., Pernot, J.

Volltext

Defect sensitive etching of nitrides: appraisal of methods von Weyher, J. L.

Volltext

Principles of electroless photoetching of non-uniformly doped GaN: Kinetics and defect revealing von Weyher, J.L., van Dorp, D.H., Kelly, J.J.

Volltext

Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits von Weyher, J. L., Ashraf, H., Hageman, P. R.

Volltext

On the hydrophobicity of modified Ga-polar GaN surfaces von Dzięcielewski, I., Weyher, J. L., Dzwolak, W.

Volltext

Defects in GaN single crystals and homoepitaxial structures von Weyher, J.L., Kamler, G., Nowak, G., Borysiuk, J., Lucznik, B., Krysko, M., Grzegory, I., Porowski, S.

Volltext

Photo-etching of GaN: Revealing nano-scale non-homogeneities von Weyher, J.L., Smalc-Koziorowska, J., Bańkowska, M., Dzięcielewski, I., Marona, Ł., Perlin, P.

Volltext