Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces von Sobiesierski, Z, Westwood, D I, Matthai, C C

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Surface reconstructions of GaAs(111)A and (111)B : a static surface phase study by reflection high-energy electron diffraction von WOOLF, D. A, WESTWOOD, D. I, WILLIAMS, R. H

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Initial stages of molecular-beam epitaxy growth of GaN on 6H-SiC(0001) von Lu, J., Haworth, L., Westwood, D. I., Macdonald, J. E.

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In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy von Ozanyan, K. B., Parbrook, P. J., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Z., Westwood, D. I.

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Atomic hydrogen cleaning, nitriding and annealing InSb (100) von Haworth, L, Lu, J, Westwood, D.I, MacDonald, J.E

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A detailed surface phase diagram for ZnSe MBE growth and ZnSe/GaAs(0 0 1) interface studies von Wolfframm, D., Evans, D.A., Westwood, D.I., Riley, J.

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The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects von Westwood, D.I, Sobiesierski, Z, Matthai, C.C

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The molecular beam epitaxial growth of GaAs/GaAs(111)B : doping and growth temperature studies von WOOLF, D. A, SOBIESIERSKI, Z, WESTWOOD, D. I, WILLIAMS, R. H

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Reflectance anisotropy spectroscopy and the growth of low-dimensional materials von Sobiesierski, Z, Westwood, D.I

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The homoepitaxial growth of GaAs(111)A and (111)B by molecular beam epitaxy: an investigation of the temperature-dependent surface reconstructions and bulk electrical conductivity... von Woolf, D A, Westwood, D I, Williams, R H

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Fabrication of high-aspect-ratio, sub-micron gratings in AlGaInP/GaAs laser structures using a BCl3/Cl2/Ar inductively coupled plasma von Edwards, G T, Sobiesierski, A, Westwood, D I, Smowton, P M

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Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100) von Haworth, L., Lu, J., Westwood, D.I., Macdonald, J.E.

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Metrology of semiconductor device structures by cross-sectional AFM von Jenkins, C., Westwood, D.I., Elliott, M., Macdonald, J.E., Meaton, C., Bland, S.

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Selective etching of AlGaInP laser structures in a BCl3/Cl2 inductively coupled plasma von Edwards, G T, Westwood, D I, Smowton, P M

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The (3 × 3) reconstruction and its evolution during the nitridation of GaAs(001) von Lu, J., Westwood, D.I., Haworth, L., Hill, P., Macdonald, J.E.

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Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxy von WESTWOOD, D. I, WOOLF, D. A, VILA, A, CORNET, A, MORANTE, J. R

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Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces von Resch, U., Esser, N., Raptis, Y.S., Richter, W., Wasserfall, J., Förster, A., Westwood, D.I.

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Residual strain measurements in thick InxGa1-xAs layers grown on GaAs (100) by molecular beam epitaxy von WESTHWOOD, D. I, WOOLF, D. A

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The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies von Woolf, D.A., Williams, J.P., Westwood, D.I., Sobiesierski, Z., Aubrey, J.E., Williams, R.H.

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Optical monitoring of InP monolayer growth rates von Parbrook, P. J., Ozanyan, K. B., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Z., Westwood, D. I.

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