Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs von Vasen, T., Ramvall, P., Afzalian, A., Doornbos, G., Holland, M., Thelander, C., Dick, K. A., Wernersson, L. - E., Passlack, M.

Volltext

Vertical high-mobility wrap-gated InAs nanowire transistor von Bryllert, T., Wernersson, L.-E., Froberg, L.E., Samuelson, L.

Volltext

Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor von Memisevic, E., Lind, E., Hellenbrand, M., Svensson, J., Wernersson, L.-E

Volltext

Narrow gap nanowires: From nanotechnology to RF-circuits on Si von Wernersson, L.-E.

Volltext

Vertical nanowire III–V MOSFETs with improved high-frequency gain von Kilpi, O.-P, Hellenbrand, M, Svensson, J, Lind, E, Wernersson, L.-E

Volltext

Picosecond dynamics in a millimetre-wave RTD–MOSFET wavelet generator von Ohlsson, L, Fay, P, Wernersson, L.-E

Volltext

High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz von Zota, C.B, Lindelöw, F, Wernersson, L.-E, Lind, E

Volltext

Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric von Roll, G., Mo, J., Lind, E., Johansson, S., Wernersson, L.-E.

Volltext

A transmission line method for evaluation of vertical InAs nanowire contacts von Berg, M., Svensson, J., Lind, E., Wernersson, L.-E.

Volltext

Correlation-induced conductance suppression at level degeneracy in a quantum dot von Nilsson, H A, Karlström, O, Larsson, M, Caroff, P, Pedersen, J N, Samuelson, L, Wacker, A, Wernersson, L-E, Xu, H Q

Volltext

Surface and core contribution to 1/ f -noise in InAs nanowire metal-oxide-semiconductor field-effect transistors von Persson, K.-M., Malm, B. G., Wernersson, L.-E.

Volltext

Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate von Thelander, C., FrobergFroberg, L.E., Rehnstedt, C., Samuelson, L., Wernersson, L.-E.

Volltext

Magnetic resonance imaging of the knee for chronological age estimation—a systematic review von Ording Muller, Lil-Sofie, Adolfsson, Jan, Forsberg, Lisa, Bring, Johan, Dahlgren, Jovanna, Domeij, Helena, Gornitzki, Carl, Wernersson, Emma, Odeberg, Jenny

Volltext

Treatments for hyperemesis gravidarum: A systematic review von Vinnars, Marie‐Therese, Forslund, Maria, Claesson, Ing‐Marie, Hedman, Annicka, Peira, Nathalie, Olofsson, Hanna, Wernersson, Emma, Ulfsdottir, Hanna

Volltext

Time-Resolved X‑ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires von Jurgilaitis, A, Enquist, H, Andreasson, B. P, Persson, A. I. H, Borg, B. M, Caroff, P, Dick, K. A, Harb, M, Linke, H, Nüske, R, Wernersson, L.-E, Larsson, J

Volltext

Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates von Wu, Jun, Lind, E., Timm, R., Hjort, Martin, Mikkelsen, A., Wernersson, L.-E.

Volltext

Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz von EGARD, M, JOHANSSON, S, JOHANSSON, A.-C, PERSSON, K.-M, DEY, A. W, BORG, B. M, THELANDER, C, WERNERSSON, L.-E, LIND, E

Volltext

InAs nanowire MOSFET differential active mixer on Si-substrate von Persson, K.-M, Berg, M, Sjöland, H, Lind, E, Wernersson, L.-E

Volltext

InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices von Nilsson, H. A., Deng, M. T., Caroff, P., Thelander, C., Samuelson, L., Wernersson, L.-E, Xu, H. Q.

Volltext

Development of a Vertical Wrap-Gated InAs FET von Thelander, C., Rehnstedt, C., Froberg, L.E., Lind, E., Martensson, T., Caroff, P., Lowgren, T., Ohlsson, B.J., Samuelson, L., Wernersson, L.-E.

Volltext