Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography von Munshi, A. M, Dheeraj, D. L, Fauske, V. T, Kim, D. C, Huh, J, Reinertsen, J. F, Ahtapodov, L, Lee, K. D, Heidari, B, van Helvoort, A. T. J, Fimland, B. O, Weman, H

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Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress von Signorello, G., Lörtscher, E., Khomyakov, P.A., Karg, S., Dheeraj, D.L., Gotsmann, B., Weman, H., Riel, H.

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Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires von Hoang, Thang B., Moses, A. F., Zhou, H. L., Dheeraj, D. L., Fimland, B. O., Weman, H.

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Determination of GaAs zinc blende/wurtzite band offsets utilizing GaAs nanowires with an axial GaAsSb insert von Ahtapodov, L., Kauko, H., Munshi, A. M., Fimland, B. O., van Helvoort, A. T. J., Weman, H.

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Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy von Dheeraj, D L, Munshi, A M, Scheffler, M, van Helvoort, A T J, Weman, H, Fimland, B O

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Effect of V/III ratio on the structural and optical properties of self-catalysed GaAs nanowires von Ahtapodov, L, Munshi, A M, Nilsen, J S, Reinertsen, J F, Dheeraj, D L, Fimland, B O, van Helvoort, A T J, Weman, H

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Fabrication of Si(111) crystalline thin film on graphene by aluminum-induced crystallization von Høiaas, I. M., Kim, D. C., Weman, H.

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Zinc blende GaAsSb nanowires grown by molecular beam epitaxy von Dheeraj, D L, Patriarche, G, Largeau, L, Zhou, H L, van Helvoort, A T J, Glas, F, Harmand, J C, Fimland, B O, Weman, H

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Wurtzite GaAs/AlGaAs core–shell nanowires grown by molecular beam epitaxy von Zhou, H L, Hoang, T B, Dheeraj, D L, van Helvoort, A T J, Liu, L, Harmand, J C, Fimland, B O, Weman, H

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Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM von Kauko, H., Grieb, T., Bjørge, R., Schowalter, M., Munshi, A.M., Weman, H., Rosenauer, A., van Helvoort, A.T.J.

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Evaluating focused ion beam patterning for position-controlled nanowire growth using computer vision von Mosberg, A B, Myklebost, S, Ren, D, Weman, H, Fimland, B O, van Helvoort, A T J

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The effects of Sb concentration variation on the optical properties of GaAsSb GaAs heterostructured nanowires von Todorovic, J, Kauko, H, Ahtapodov, L, Moses, A F, Olk, P, Dheeraj, D L, Fimland, B O, Weman, H, van Helvoort, A T J

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In situ electronic probing of semiconducting nanowires in an electron microscope von FAUSKE, V.T., ERLBECK, M.B., HUH, J., KIM, D.C., MUNSHI, A.M., DHEERAJ, D.L., WEMAN, H., FIMLAND, B.O., VAN HELVOORT, A.T.J.

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Formation of ZnO Nanosheets Grown by Catalyst-Assisted Pulsed Laser Deposition von Weigand, C. C, Bergren, M. R, Ladam, C, Tveit, J, Holmestad, R, Vullum, P. E, Walmsley, J. C, Dahl, Ø, Furtak, T. E, Collins, R. T, Grepstad, J, Weman, H

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Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy von Dheeraj, D.L., Munshi, A.M., Christoffersen, O.M., Kim, D.C., Signorello, G., Riel, H., van Helvoort, A.T.J., Weman, H., Fimland, B.O.

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Correlated micro-photoluminescence and electron microscopy studies of the same individual heterostructured semiconductor nanowires von Todorovic, J, Moses, A F, Karlberg, T, Olk, P, Dheeraj, D L, Fimland, B O, Weman, H, van Helvoort, A T J

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Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires von Dheeraj, D.L., Patriarche, G., Zhou, H., Harmand, J.C., Weman, H., Fimland, B.O.

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Radial composition variations in the shells of GaAs AlGaAs core-shell nanowires von Nilsen, J S, Reinertsen, J F, Mosberg, A, Fauske, V T, Munshi, A M, Dheeraj, D L, Fimland, B O, Weman, H, van Helvoort, A T J

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In-situ electrical and structural characterization of individual GaAs nanowires von Fauske, V T, Kim, D C, Munshi, A M, Dheeraj, D L, Fimland, B-O, Weman, H, van Helvoort, A T J

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Photoluminescence Polarization Anisotropy in a Single Heterostructured III-V Nanowire with Mixed Crystal Phases von Moses, A. F., Hoang, T. B., Ahtapodov, L., Dheeraj, D. L., Fimland, B. O., Weman, H., Helvoort, A. T. J. van

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