Design and performance of tunnel collector HBTs for microwave power amplifiers von Welty, R.J., Mochizuki, K., Lutz, C.R., Welser, R.E., Asbeck, P.M.

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Impact of compositionally graded base regions on the DC and RF properties of reduced turn-on voltage InGaP-GaInAsN DHBTs von Stevens, K.S., Welty, R.J., Welser, R.E., Landini, B.E., Asbeck, P.M., Shih-Chieh Hung, Wen-Pin Lu, Shun-Ching Feng

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Implementation of reduced turn-on voltage InGaP HBTs using graded GaInAsN base regions von DeLuca, P.M., Lutz, C.R., Welser, R.E., Chi, T.Y., Huang, E.K., Welty, R.J., Asbeck, P.M.

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GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): optimization of fabrication process and epitaxial layer structure for high-efficiency... von Mochizuki, K., Welty, R.J., Asbeck, P.M., Lutz, C.R., Welser, R.E., Whitney, S.J., Pan, N.

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Role of neutral base recombination in high gain AlGaAs/GaAs HBT's von Welser, R.E., Pan, N., Duy-Phach Vu, Zampardi, P.J., McDermott, B.T.

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Photoluminescence emissions both in the visible and infrared spectra from thin, uncapped InN deposits von Laboutin, O.A., Welser, R.E.

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Turn-on voltage investigation of GaAs-based bipolar transistors with Ga1-xInxAs1-yNy base layers von Welser, R.E, DeLuca, P.M, Pan, N

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Demonstration of quantum solar cell concepts in InGaP barrier structures von Welser, R.E., Chaplin, M., Van Un

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Turn-on voltage investigation of GaAs-based bipolar transistors with Ga/sub 1-x/In/sub x/As/sub 1-y/Ny base layers von Welser, R.E., DeLuca, P.M., Pan, N.

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Turn-on voltage investigation of GaAs-based bipolar transistors with Ga/sub 1-x/In/sub x/As/sub 1-y/N y base layers von Welser, R.E., DeLuca, P.M., Pan, N.

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Al Ga1−)0.65In0.35As monolithic multijunction solar cells von Welser, R.E., Guido, L.J.

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Experimental comparison of I/sub c/-V/sub ce/ parameters and large-signal performance for III-V HBTs von Cismaru, C., Zampardi, P.J., Welser, R.E.

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Al xGa 1− x) 0.65In 0.35As monolithic multijunction solar cells von Welser, R.E., Guido, L.J.

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Metalorganic chemical vapor deposition of AlGaAs and InGaP heterojunction bipolar transistors von Pan, N., Welser, R.E., Lutz, C.R., DeLuca, P.M., Han, B., Hong, K.

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High performance Al/sub 0.35/Ga/sub 0.65/As/GaAs HBT's von Welser, R.E., Pan, N., Lutz, C.R., Vu, D.P., Zampardi, P.J., Pierson, R.L., McDermott, B.T.

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High performance Al0.35Ga0.65As/GaAs HBT's von Welser, R.E, Pan, N, Lutz, C.R, Vu, D.P, Zampardi, P.J, Pierson, R.L, McDermott, B.T

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Experimental probe of minority carrier velocity profile von Rehder, E.M., Lutz, C.R., Welser, R.E., Zampardi, P.J.

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Base transport characteristics of InP DHBTS grown by MOVPE von Landini, B.E., Deluca, P.M., Welser, R.E., Pierson, R., Rowell, P., Newell, S., Brar, B.

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Exploring physical mechanisms for sudden beta degradation in GaAs-based HBTs von Welser, R.E., DeLuca, P.M.

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Novel base doping profile for improved speed and power von Rehder, E.M., Cismaru, C., Zampardi, P.J., Welser, R.E.

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