Progress in the development of metamorphic multi-junction III-V space solar cells von Sinharoy, Samar, Patton, Martin O., Valko Sr, Thomas M., Weizer, Victor G.

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Behavior of hydrogen in [alpha]-iron at lower temperatures / by Victor G. Weizer von Weizer, Victor G

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Field evaporation ion source with possible application to electrostatic propulsion / by Victor G. Weizer von Weizer, Victor G

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Investigation of intermittent enhancement of ion emission from a tungsten surface using the field-ion microscope / Victor G. Weizer von Weizer, Victor G

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The influence of interstitial Ga and interfacial Au2P3 on the electrical and metallurgical behavior of Au-contacted III-V semiconductors von Weizer, Victor G., Fatemi, Navid S.

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The Achievement of Near-Theoretical-Minimum Contact Resistance to InP von Fatemi, Navid S., Weizer, Victor G.

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Low resistance silver contacts to indium phosphide - Electrical and metallurgical considerations von Weizer, Victor G., Fatemi, Navid S.

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InGaAs monolithic interconnected modules (MIMs) von Fatemi, N.S., Wilt, D.M., Jenkins, P.P., Weizer, V.G., Hoffman, R.W., Murray, C.S., Scheiman, D., Brinker, D., Riley, D.

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Improved performance of p/n InP solar cells von Hoffman, R.W., Fatemi, N.S., Jenkins, P.P., Weizer, V.G., Stan, M.A., Ringel, S.A., Scheiman, D.A., Wilt, D.M., Brinker, D.J., Walters, R.J., Messenger, S.R.

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Electrical and metallurgical behavior of Au/Zn contacts to p -type indium phosphide von Fatemi, Navid S., Weizer, Victor G.

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Development of a very high efficiency, dot-junction, InGaAs thermophotovoltaic (TPV) converter for deep space missions von Sinharoy, S., Weizer, V.G., Wakchaure, Y., Ning Su, Fay, P., Scheiman, D.

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The structural and electrical properties of low-resistance Ni contacts to InP von Fatemi, Navid S., Weizer, Victor G.

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The interaction of gold with gallium arsenide von Weizer, Victor G., Fatemi, Navid S.

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A unique, device-friendly contact system for shallow junction p/n indium phosphide devices von WEIZER, V. G, FATEMI, N. S

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Simple, extremely low resistance contact system to n-InP that does not exhibit metal-semiconductor intermixing during sintering von Weizer, Victor G., Fatemi, Navid S.

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The kinetics of the Au-InP interaction von Fatemi, Navid S., Weizer, Victor G.

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Contact spreading and the Au3In-to-Au9In4 transition in the Au-InP system von Weizer, Victor G., Fatemi, Navid S.

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The effect of metal surface passivation on the Au-InP interaction von Fatemi, Navid S., Weizer, Victor G.

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1.62 eV/1.1 eV InGaP/InGaAs dual-junction solar cell development on lattice-mismatched GaAs von Sinharoy, S., Smith, M.A., Weizer, V.G., Pal, A.M., Khan, O., Scheiman, D.A., Jenkins, P.P.

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The formation of low resistance electrical contacts to shallow junction InP devices without compromising emitter integrity von FATEMI, N. S, WEIZER, V. G

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