High-Operating-Temperature MWIR Detector Diodes von Schaake, H.F., Kinch, M.A., Chandra, D., Aqariden, F., Liao, P.K., Weirauch, D.F., Wan, C.-F., Scritchfield, R.E., Sullivan, W.W., Teherani, J.T., Shih, H.D.

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Growth of very low arsenic-doped HgCdTe von CHANDRA, D, WEIRAUCH, D. F, SCHAAKE, H. F, KINCH, M. A, AQARIDEN, F, WAN, C. F, SHIH, H. D

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Deactivation of arsenic as an acceptor by ion implantation and reactivation by low-temperature anneal von CHANDRA, D, SCHAAKE, H. F, KINCH, M. A, DREISKE, P. D, TEHERANI, T, AQARIDEN, F, WEIRAUCH, D. F, SHIH, H. D

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Temperature, thickness, and interfacial composition effects on the absorption properties of (Hg,Cd)Te epilayers grown by liquid-phase epitaxy on CdZnTe von LITTLER, C. L, GORMAN, B. P, WEIRAUCH, D. F, LIAO, P. K, SCHAAKE, H. F

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p to n conversion in SWIR mercury cadmium telluride with ion milling von CHANDRA, D, SCHAAKE, H. F, AQARIDEN, F, TEHERANI, T, KINCH, M. A, DREISKE, P. D, WEIRAUCH, D. F, SHIH, H. D

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Activation of arsenic as an acceptor in Hg1-xCdxTe under equilibrium conditions von CHANDRA, D, SCHAAKE, H. F, KINCH, M. A, AQARIDEN, F, WAN, C. F, WEIRAUCH, D. F, SHIH, H. D

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Preparation of ZnSe light-emitting diodes by metalorganic chemical vapor deposition using trisdimethylaminoarsine as a p-type doping source von Bevan, M. J., Shih, H. D., Dodge, J. A., Syllaios, A. J., Weirauch, D. F.

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A study of lapping and polishing damage in single-crystal CdTe von WEIRAUCH, D. F

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An evaluation of the sessile drop technique for the study of (Hg, Cd)Te surfaces von Weirauch, D F, Strong, L, Wallace, R M, Chandra, D

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Correlation of the anisotropic etching of single−crystal silicon spheres and wafers von Weirauch, Donald F.

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Supercooling studies and LPE growth of Hg1-xCdxTe from Te-rich solutions von WAN, C. F, WEIRAUCH, D. F, KORENSTEIN, R, BYLANDER, E. G, CASTRO, C. A

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Terracing in HgCdTe LPE films grown from Te solution von Parker, S.G., Weirauch, D.F., Chandra, D.

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Inhomogeneity model for anomalous Hall effects in n-type Hg0.8Cd0.2 Te liquid-phase-epitaxy films von CHEN, M. C, PARKER, S. G, WEIRAUCH, D. F

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Inhomogeneity model for anomalous Hall effects in n -type Hg0.8Cd0.2Te liquid-phase-epitaxy films von Chen, M. C., Parker, S. G., Weirauch, D. F.

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Activation of arsenic as an acceptor in Hg sub(1-x)Cd sub(x)Te under equilibrium conditions von Chandra, D, Schaake, H F, Kinch, M A, Aqariden, F, Wan, C F, Weirauch, D F, Shih, H D

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Activation of arsenic as an acceptor in Hg^sub 1-x^Cd^sub x^Te under equilibrium conditions von Chandra, D, Schaake, H F, Kinch, M A, Aqariden, F, Wan, C F, Weirauch, D F, Shih, H D

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Comment on ‘‘Constant-current-density model for the anomalous Hall effects in Hg0.8Cd0.2Te’’ [Appl. Phys. Lett. 5 3 , 307 (1988)] von Chen, M. C., Parker, S. G., Weirauch, D. F.

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Correlation of the Anisotropic Etching of Single-Crystal Si Spheres and Wafers von Weirauch, D F

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Inhomogeneity model for anomalous Hall effects in n-type Hg sub(0.8)Cd sub(0.2)Te liquid-phase-epitaxy films von Chen, M C, Parker, S G, Weirauch, D F

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Method of measuring low pressures within evacuated, sealed glass tubes von Weirauch, Donald F.

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