Totally relaxed GexSi1-x layers with low threading dislocation densities grown on Si substrates von FITZGERALD, E. A, XIE, Y.-H, GREEN, M. L, BRASEN, D, KORTAN, A. R, MICHEL, J, MII, Y.-J, WEIR, B. E

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Precursor ion damage and angular dependence of single event gate rupture in thin oxides von Sexton, F.W., Fleetwood, D.M., Shaneyfelt, M.R., Dodd, P.E., Hash, G.L., Schanwald, L.P., Loemker, R.A., Krisch, K.S., Green, M.L., Weir, B.E., Silverman, P.J.

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Gate oxide reliability projection to the sub-2 nm regime von Weir, B E, Alam, M A, Bude, J D, Silverman, P J, Ghetti, A, Baumann, F, Diodato, P, Monroe, D, Sorsch, T, Timp, G L, Ma, Y, Brown, M M, Hamad, A, Hwang, D, Mason, P

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Soft breakdown at all positions along the N-MOSFET von Weir, B.E., Alam, M.A., Silverman, P.J.

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A study of soft and hard breakdown - Part I: Analysis of statistical percolation conductance von Alam, M.A., Weir, B.E., Silverman, P.J.

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A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling von Alam, M.A., Weir, B.E., Silverman, P.J.

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Influence of surface reconstruction on the orientation of homoepitaxial silicon films von HEADRICK, R. L, WEIR, B. E, BEVK, J, FREER, B. S, EAGLESHAM, D. J, FELDMAN, L. C

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Ultra-thin gate oxide reliability projections von Weir, B.E., Alam, M.A., Silverman, P.J., Baumann, F., Monroe, D., Bude, J.D., Timp, G.L., Hamad, A., Ma, Y., Brown, M.M., Hwang, D., Sorsch, T.W., Ghetti, A., Wilk, G.D.

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Low-temperature homoepitaxy on Si(111) von WEIR, B. E, FREER, B. S, HEADRICK, R. L, EAGLESHAM, D. J, GILMER, G. H, BEVK, J, FELDMAN, L. C

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Si(100)-(2×1)boron reconstruction : self-limiting monolayer doping von HEADRICK, R. L, WEIR, B. E, LEVI, A. F. J, EAGLESHAM, D. J, FELDMAN, L. C

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Stress relaxation in Mo/Si multilayer structures von KOLA, R. R, WINDT, D. L, WASKIEWICZ, W. K, WEIR, B. E, CELLER, G. K, VOLKERT, C. A

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Electrical characterization of an ultrahigh concentration boron delta-doping layer von Weir, B. E., Feldman, L. C., Monroe, D., Grossmann, H.-J., Headrick, R. L., Hart, T. R.

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Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C von GREEN, M. L, WEIR, B. E, BRASEN, D, HSIEH, Y. F, HIGASHI, G, FEYGENSON, A, FELDMAN, L. C, HEADRICK, R. L

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Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics for sub-50 nm CMOS von GREEN, M. L, SORSCH, T. W, TIMP, G. L, MULLER, D. A, WEIR, B. E, SILVERMAN, P. J, MOCCIO, S. V, KIM, Y. O

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Au/Pt/Ti contacts to p-In0.53Ga0.47As and n-InP layers formed by a single metallization common step and rapid thermal processing von KATZ, A, WEIR, B. E, DAUTREMONT-SMITH, W. C

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MBE growth and properties of Fe3(Al,Si) on GaAs(100) von HONG, M, CHEN, H. S, KWO, J, KORTAN, A. R, MANNAERTS, J. P, WEIR, B. E, FELDMAN, L. C

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Pt/Ti/n-InP nonalloyed ohmic contacts formed by rapid thermal processing von KATZ, A, WEIR, B. E, CHU, S. N. G, THOMAS, P. M, SOLER, M, BOONE, T, DAUTREMONT-SMITH, W. C

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Selective electroless copper metallization of palladium silicide on silicon substrates von MAK, C. Y, MILLER, B, FELDMAN, L. C, WEIR, B. E, HIGASHI, G. S, FITZGERALD, E. A, BOONE, T, DOHERTY, C. J, VAN DOVER, R. B

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Ohmic contacts to heavily carbon-doped p-AlxGa1-xAs von KATZ, A, ABERNATHY, C. R, PEARTON, S. J, WEIR, B. E, SAVIN, W

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Microstructure and contact resistance temperature dependence of Pt/Ti ohmic contact to Zn-doped GaAs von Katz, A., Nakahara, S., Savin, W., Weir, B. E.

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