Layer thickness scaling and wake-up effect of pyroelectric response in Si-doped HfO2 von Mart, C., Kämpfe, T., Zybell, S., Weinreich, W.

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Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO2 thin films von Mart, C., Kühnel, K., Kämpfe, T., Zybell, S., Weinreich, W.

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Doping concentration dependent piezoelectric behavior of Si:HfO2 thin-films von Kirbach, S., Lederer, M., Eßlinger, S., Mart, C., Czernohorsky, M., Weinreich, W., Wallmersperger, T.

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Embedded Silicon-Germanium-Based Thermoelectric Devices on 300-mm Wafer von Schwinge, C., Hoffmann, R., Biedermann, K., Czernohorsky, M., Kannan, J., Rudolph, M., Mende, F., Wagner-Reetz, M., Gerlach, G., Weinreich, W.

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Impact of interface variations on J-V and C-V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1-x)AlxO2 films von WEINREICH, W, REICHE, R, SCHRODER, U, BAUER, A. J, RYSSEL, H, LEMBERGER, M, JEGERT, G, MÜLLER, J, WILDE, L, TEICHERT, S, HEITMANN, J, ERBEN, E, OBERBECK, L

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Monte Carlo Simulation of Leakage Currents in \hbox/\hbox Capacitors von Jegert, G, Kersch, A, Weinreich, W, Lugli, P

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Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition von Müller, J., Böscke, T.S., Schröder, U., Reinicke, M., Oberbeck, L., Zhou, D., Weinreich, W., Kücher, P., Lemberger, M., Frey, L.

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Influence of N 2 and NH 3 annealing on the nitrogen incorporationand k -value of thin ZrO 2 layers von Weinreich, W., Ignatova, V. A., Wilde, L., Teichert, S., Lemberger, M., Bauer, A. J., Reiche, R., Erben, E., Heitmann, J., Oberbeck, L., Schröder, U.

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Atomic layer deposition of textured Li4Ti5O12: A high-power and long life-cycle life anode for lithium-ion thin-film batteries von Speulmanns, J, Kia, A.M, Bönhardt, S, Weinreich, W, Adelhelm, P

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Improved manufacturability of ZrO 2 MIM capacitors by process stabilizing HfO 2 addition von Müller, J., Böscke, T.S., Schröder, U., Reinicke, M., Oberbeck, L., Zhou, D., Weinreich, W., Kücher, P., Lemberger, M., Frey, L.

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Improved manufacturability of ZrO@@d2@ MIM capacitors by process stabilizing HfO@@d2@ addition von Mueller, J, Boescke, T S, Schroeder, U, Reinicke, M, Oberbeck, L, Zhou, D, Weinreich, W, Kuecher, P, Lemberger, M, Frey, L

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Impact of interface variations on @@iJ@-@@iV@ and @@iC@-@@iV@ polarity asymmetry of MIM capacitors with amorphous and crystalline Zr@@d(1-@@@i@@dx@@@@d)@Al@@i@@dx@@O@@d2@ films von Weinreich, W, Reiche, R, Lemberger, M, Jegert, G, Mueller, J, Wilde, L, Teichert, S, Heitmann, J, Erben, E, Oberbeck, L, Schroeder, U, Bauer, A J, Ryssel, H

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Impact of interface variations on J– V and C– V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr (1− x )Al x O 2 films von Weinreich, W., Reiche, R., Lemberger, M., Jegert, G., Müller, J., Wilde, L., Teichert, S., Heitmann, J., Erben, E., Oberbeck, L., Schröder, U., Bauer, A.J., Ryssel, H.

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Enhanced pyroelectric response at morphotropic and field-induced phase transitions in ferroelectric hafnium oxide thin films von Mart, C, Kämpfe, T, Kühnel, K, Czernohorsky, M, Kolodinski, S, Wiatr, M, Weinreich, W, Eng, L.M

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Spectroscopic analysis of ultra-thin TiN as a diffusion barrier for lithium-ion batteries by ToF-SIMS, XPS, and EELS von Kia, A.M, Speulmanns, J, Bönhardt, S, Emara, J, Kühnel, K, Haufe, N, Weinreich, W

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Improved manufacturability of Zr02 MIM capacitors by process stabilizing HfO2 addition von MÜLLER, J, BÖSCKE, T. S, SCHRÖDER, U, REINICKE, M, OBERBECK, L, ZHOU, D, WEINREICH, W, KUCHER, P, LEMBERGER, M, FREY, L

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ELECTRIC FENCE: PULSE GENERATOR AND POWER SAVING WITH FULL DISCHARGE WHEN ANIMAL TOUCHES FENCE CONDUTOR von WEINREICH W

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Drilling printed circuit boards, its entry and backing boards von R. W. WEINREICH

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PULSE GENERATOR von W. WEINREICH

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Correlation of microscopic and macroscopic electrical characteristicsof high- k Zr Si x O 2 − x thin films using tunneling atomic force microscopy von Weinreich, W., Wilde, L., Kücher, P., Lemberger, M., Yanev, V., Rommel, M., Bauer, A. J., Erben, E., Heitmann, J., Schröder, U., Oberbeck, L.

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