Flip-Chip Approach for 500 GHz Broadband Interconnects von Sinha, Siddhartha, Doerner, Ralf, Schmuckle, Franz-Josef, Monayakul, Sirinpa, Hrobak, Michael, Weimann, Nils G., Krozer, Viktor, Heinrich, Wolfgang

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GaN nanotip pyramids formed by anisotropic etching von Ng, Hock M., Weimann, Nils G., Chowdhury, Aref

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Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer von Nosaeva, Ksenia, Al-Sawaf, Thualfiqar, John, Wilfred, Stoppel, Dimitri, Rudolph, Matthias, Schmuckle, Franz-Josef, Janke, Bernd, Kruger, Olaf, Krozer, Viktor, Heinrich, Wolfgang, Weimann, Nils G.

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SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications von Weimann, Nils G., Stoppel, Dimitri, Schukfeh, Muhammed I., Hossain, Maruf, Al-Sawaf, Thualfiqar, Janke, Bernd, Doerner, Ralf, Sinha, Siddharta, Schmückle, Franz-Josef, Krüger, Olaf, Krozer, Viktor, Heinrich, Wolfgang, Lisker, Marco, Krüger, Andreas, Datsuk, Anton, Meliani, Chafik, Tillack, Bernd

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Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With } ~ 0.53 THz von Weimann, Nils G., Johansen, Tom K., Stoppel, Dimitri, Matalla, Matthias, Brahem, Mohamed, Nosaeva, Ksenia, Boppel, Sebastian, Volkmer, Nicole, Ostermay, Ina, Krozer, Viktor, Ostinelli, Olivier, Bolognesi, Colombo R.

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Second-harmonic generation in periodically poled GaN von Chowdhury, Aref, Ng, Hock M., Bhardwaj, Manish, Weimann, Nils G.

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Towards Continuous Real-Time Plant and Insect Monitoring by Miniaturized THz Systems von Sheikh, Fawad, Prokscha, Andreas, Batra, Aman, Lessy, Dien, Salah, Baha, Sievert, Benedikt, Degen, Marvin, Rennings, Andreas, Jalali, Mandana, Svejda, Jan Taro, Alibeigloo, Pooya, Preuss, Christian, Mutlu, Enes, Kress, Robin, Clochiatti, Simone, Kolpatzeck, Kevin, Kubiczek, Tobias, Ullmann, Ingrid, Root, Konstantin, Brix, Fabian, Kramer, Ute, Vossiek, Martin, Balzer, Jan C., Weimann, Nils G., Kaiser, Thomas, Erni, Daniel

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A Modular MIMO Millimeter-Wave Imaging Radar System for Space Applications and Its Components von Hrobak, Michael, Thurn, Karsten, Moll, Jochen, Hossain, Maruf, Shrestha, Amit, Al-Sawaf, Thualfiqar, Stoppel, Dimitri, Weimann, Nils G., Rämer, Adam, Heinrich, Wolfgang, Martinez, Javier, Vossiek, Martin, Johansen, Tom K., Krozer, Viktor, Resch, Marion, Bosse, Jürgen, Sterns, Michael, Loebbicke, Kai, Zorn, Stefan, Eissa, Mohamed, Lisker, Marco, Herzel, Frank, Miesen, Robert, Vollmann, Klaus

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Patterning GaN Microstructures by Polarity-Selective Chemical Etching von Ng, Hock M., Parz, Wolfgang, Weimann, Nils G., Chowdhury, Aref

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Scattering of electrons at threading dislocations in GaN von Weimann, Nils G., Eastman, Lester F., Doppalapudi, Dharanipal, Ng, Hock M., Moustakas, Theodore D.

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Manufacturable Low-Cost Flip-Chip Mounting Technology for 300-500-GHz Assemblies von Weimann, Nils G., Monayakul, Sirinpa, Sinha, Siddhartha, Schmuckle, Franz-Josef, Hrobak, Michael, Stoppel, Dimitri, John, Wilfred, Kruger, Olaf, Doerner, Ralf, Janke, Bernd, Krozer, Viktor, Heinrich, Wolfgang

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Efficient Membrane Grating Couplers on InP von Long Chen, Liming Zhang, Doerr, Christopher R, Dupuis, Nicolas, Weimann, Nils G, Kopf, Rose F

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Performance study of a 248 GHz voltage controlled hetero-integrated source in InP-on-BiCMOS technology von Hossain, Maruf, Ostermay, Ina, Weimann, Nils G., Schmueckle, Franz Josef, Borngraeber, Johannes, Meliani, Chafik, Lisker, Marco, Tillack, Bernd, Krueger, Olaf, Krozer, Viktor, Heinrich, Wolfgang

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An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth von Weiner, J.S., Lee, J.S., Leven, A., Baeyens, Y., Houtsma, V., Georgiou, G., Yang Yang, Frackoviak, J., Tate, A., Reyes, R., Kopf, R.F., Wei-Jer Sung, Weimann, N.G., Young-Kai Chen

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InP double-hetero bipolar transistor technology for 130 GHz clock speed von Weimann, Nils G., Houtsma, V., Yang, Y., Frackoviak, J., Tate, A., Chen, J., Weiner, J., Lee, J., Baeyens, Y., Chen, Y. K.

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SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications: SciFab -InP DHBT/SiGe BiCMOS heterointegration von Weimann, Nils G., Stoppel, Dimitri, Schukfeh, Muhammed I., Hossain, Maruf, Al-Sawaf, Thualfiqar, Janke, Bernd, Doerner, Ralf, Sinha, Siddharta, Schmückle, Franz-Josef, Krüger, Olaf, Krozer, Viktor, Heinrich, Wolfgang, Lisker, Marco, Krüger, Andreas, Datsuk, Anton, Meliani, Chafik, Tillack, Bernd

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SiGe differential transimpedance amplifier with 50-GHz bandwidth von Weiner, J.S., Leven, A., Houtsma, V., Baeyens, Y., Young-Kai Chen, Paschke, P., Yang Yang, Frackoviak, J., Wei-Jer Sung, Tate, A., Reyes, R., Kopf, R.F., Weimann, N.G.

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Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates von Weimann, N.G., Manfra, M.J., Wachtler, T.

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Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma-assisted MBE on 6H-SiC von Weimann, N.G., Manfra, M.J., Chakraborty, S., Tennant, D.M.

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InP DHBT circuits for 100 Gb/s Ethernet applications von Weimann, N.G., Houtsma, V., Baeyens, Y., Weiner, J., Tate, A., Frackoviak, J., Chen, Y.K.

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