Factors Influencing the Leakage Current in Embedded SiGe Source/Drain Junctions von Simoen, E., Gonzalez, M.B., Vissouvanadin, B., Chowdhury, M.K., Verheyen, P., Hikavyy, A., Bender, H., Loo, R., Claeys, C., Machkaoutsan, V., Tomasini, P., Thomas, S., Lu, J.P., Weijtmans, J.W., Wise, R.

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Using a zone axis for convergent beam electron diffraction measurements of lattice strain in strained silicon von DIERCKS, D.R, KAUFMAN, M.J, IRWIN, R.B, JAIN, A, ROBERTSON, L, WEIJTMANS, J.W, WISE, R

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Morphology of quaterthiophene thin films in organic field effect transistors von Schoonveld, W.A., Stok, R.W., Weijtmans, J.W., Vrijmoeth, J., Wildeman, J., Klapwijk, T.M.

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On implementation of embedded phosphorus-doped SiC stressors in SOI nMOSFETs von Zhibin Ren, Pei, G., Li, J., Yang, B.F., Takalkar, R., Chan, K., Xia, G., Zhu, Z., Madan, A., Pinto, T., Adam, T., Miller, J., Dube, A., Black, L., Weijtmans, J.W., Yang, B., Harley, E., Chakravarti, A., Kanarsky, T., Pal, R., Lauer, I., Park, D.-G., Sadana, D.

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Analysis of the Pre-epi Bake Conditions on the Defect Creation in Recessed SiGe S/D Junctions von Bargallo Gonzalez, Mireia, Thomas, Nicole, Simoen, Eddy, Verheyen, Peter, Hikavyy, Andriy, Leys, Frederik, Okuno, Yasutoshi, Vissouvanadin Soubaretty, Bertrand, Van Daele, Benny, Geenen, Luc, Loo, Roger, Claeys, C., Machkaoutsan, Vladimir, Tomasini, Pierre, Thomas, Shawn, Ping Lu, Jiong, Weijtmans, J.W., Wise, Rick

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Relaxation-Induced Excess Leakage Current in Recessed Si 1-x Ge x Source/Drain Junctions von Gonzalez, Mireia B., Chowdhury, Mohammad Kamruzzaman, Bhouri, Nada, Verheyen, Peter, Leys, Frederik, Richard, Olivier, Loo, Roger, Claeys, Cor, Simoen, Eddy, Machkaoutsan, Vladimir, Tomasini, Pierre, Thomas, Shawn, Lu, Jiong Ping, Weijtmans, J.W, Wise, R.

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Influence of the Highly-Doped Drain Implantation and the Window Size on Defect Creation in p+/n Si1-XGex Source/Drain Junctions von Thomas, S.G, Claeys, Cor, Kamruzzaman Chowdhury, M., Weijtmans, J.W., Wise, R., Hikavyy, H., Machkaoutsan, V., Bender, H., Vissouvanadin, B., Verheyen, Peter, Richard, O., Tomasini, P., Bhouri, N., Loo, Roger, Simoen, Eddy, Lu, J.P., Geypen, J., Bargallo Gonzalez, Mireia

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Probing Nanoscale Local Lattice Strains in Advanced Si CMOS Devices by CBED: A Tutorial with Recent Results von Kim, Moon, Huang, Jiang, Chidambaram, P.R., Irwin, Richard, Jones, Patrick, Weijtmans, J.W., Koontz, Elisabeth Marley, Wang, Yuguo, Tang, Shaoping, Wise, Rick

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High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor von Yang, B. Frank, Takalkar, R., Ren, Z., Black, L., Dube, A., Weijtmans, J.W., Li, J., Johnson, J.B., Faltermeier, J., Madan, A., Zhu, Z., Turansky, A., Xia, G., Chakravarti, A., Pal, R., Chan, K., Reznicek, A., Adam, T.N., Yang, B., de Souza, J.P., Harley, E.C.T., Greene, B., Gehring, A., Cai, M., Aime, D., Sun, S., Meer, H., Holt, J., Theodore, D., Zollner, S., Grudowski, P., Sadana, D., Park, D.-G., Mocuta, D., Schepis, D., Maciejewski, E., Luning, S., Pellerin, J., Leobandung, E.

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Superlubricity mechanism for micro electro mechanical systems von Hirano, M., Kuwano, H., Weijtmans, J.W.

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Analysis of the Pre-epi Bake Conditions on the Defect Creation in Recessed SiGe S/D Junctions von Bargallo Gonzalez, Mireia, Thomas, Nicole, Simoen, Eddy, Verheyen, Peter, Hikavyy, Andriy, Leys, Frederik, Okuno, Yasutoshi, Vissouvanadin Soubaretty, Bertrand, Loo, Roger, Claeys, C., Machkaoutsan, Vladimir, Tomasini, Pierre, Thomas, Shawn, Ping Lu, Jiong, Weijtmans, J.W., Wise, Rick

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Probing Nanoscale Local Lattice Strains in Advanced Si CMOS Devices by CBED: A Tutorial with Recent Results von Kim, Moon, Huang, Jiang, Chidambaram, P.R., Irwin, Richard, Jones, Patrick, Weijtmans, J.W., Koontz, Elisabeth Marley, Wang, Yuguo, Tang, Shaoping, Wise, Rick

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Relaxation-Induced Excess Leakage Current in Recessed Si1-xGex Source/Drain Junctions von Claeys, Cor, Simoen, Eddy, Chowdhury, Mohammad Kamruzzaman, Bhouri, Nada, Verheyen, Peter, Leys, Frederik, Richard, Olivier, Loo, Roger, Machkaoutsan, Vladimir, Tomasini, Pierre, Thomas, Shawn, Lu, Jiong Ping, Weijtmans, J.W, Wise, R.

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