In situ surface and interface study of crystalline (3×1)-O on InAs von Qin, Xiaoye, Wang, Wei-E., Rodder, Mark S., Wallace, Robert M.

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A crystalline oxide passivation on In0.53Ga0.47As (100) von Qin, Xiaoye, Wang, Wei-E, Droopad, Ravi, Rodder, Mark S., Wallace, Robert M.

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The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces von Lin, H. C., Brammertz, Guy, Martens, Koen, de Valicourt, Guilhem, Negre, Laurent, Wang, Wei-E, Tsai, Wilman, Meuris, Marc, Heyns, Marc

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Selective Area Growth of InP and Defect Elimination on Si (001) Substrates von Wang, Gang, Leys, Maarten, Loo, Roger, Richard, Olivier, Bender, Hugo, Brammertz, Guy, Waldron, Niamh, Wang, Wei-E, Dekoster, Johan, Caymax, Matty, Seefeldt, Marc, Heyns, Marc

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A Fast and Accurate Method to Study the Impact of Interface Traps on Germanium MOS Performance von Hellings, Geert, Eneman, Geert, Mitard, Jérôme, Martens, Koen, Wei-E Wang, Hoffmann, Thomas, Meuris, Marc, De Meyer, Kristin

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Optical detection and characterization of graphene by broadband spectrophotometry von Gray, Alexander, Balooch, Mehdi, Allegret, Stephane, De Gendt, Stefan, Wang, Wei-E

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Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator von Lin, Han-Chung, Wang, Wei-E., Brammertz, Guy, Meuris, Marc, Heyns, Marc

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Discovering small molecules as Wnt inhibitors that promote heart regeneration and injury repair von Xie, Shuying, Fu, Wenbin, Yu, Guangju, Hu, Xueli, Lai, Kaa Seng, Peng, Xiangwen, Zhou, Yating, Zhu, Xuejiao, Christov, Plamen, Sawyer, Leah, Ni, Terri T, Sulikowski, Gary A, Yang, Zhongzhou, Lee, Ethan, Zeng, Chunyu, Wang, Wei E, Zhong, Tao P

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Effect of D3 dopamine receptor on dopamine D4 receptor expression and function in renal proximal tubule cells from Wistar–Kyoto rats and spontaneously hypertensive rats von Chen, Xinjian, Liu, Yukai, Wang, Wei E, Chen, Caiyu, Ren, Hongmei, Zheng, Shuo, Zhou, Lin, Zeng, Chunyu

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Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces von Alian, Alireza, Brammertz, Guy, Merckling, Clement, Firrincieli, Andrea, Wang, Wei-E, Lin, H. C, Caymax, Matty, Meuris, Marc, De Meyer, Kristin, Heyns, Marc

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Characterization of anti-phase boundaries in hetero-epitaxial polar-on-nonpolar semiconductor films by optical second-harmonic generation von Lei, Ming, Price, J., Wang, Wei-E, Wong, Man Hoi, Droopad, Ravi, Kirsch, Paul, Bersuker, G., Downer, M. C.

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Interfaces of high- k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper) von Caymax, Matty, Brammertz, Guy, Delabie, Annelies, Sioncke, Sonja, Lin, Dennis, Scarrozza, Marco, Pourtois, Geoffrey, Wang, Wei-E, Meuris, Marc, Heyns, Marc

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Thermodynamic evaluation of the titanium-hydrogen system von Wang, Wei-E

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Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment von Waldron, Niamh, Nguyen, Ngoc Duy, Lin, Dennis, Brammertz, Guy, Vincent, Benjamin, Firrincieli, Andrea, Winderick, Gillis, Sioncke, Sonja, De Jaeger, Brice, Wang, Gang, Mitard, Jerome, Wang, Wei-E, Heyns, Marc, Caymax, Matty, Meuris, Marc, Absil, Philippe, Hoffmann, Thomas

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A study of capping layers for sulfur monolayer doping on III-V junctions von Yum, J. H., Shin, H. S., Hill, R., Oh, J., Lee, H. D., Mushinski, Ryan M., Hudnall, Todd W., Bielawski, C. W., Banerjee, S. K., Loh, W. Y., Wang, Wei-E, Kirsch, Paul

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Characterization of ALD Beryllium Oxide as a Potential High-k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs von Johnson, Derek W., Yum, Jung Hwan, Hudnall, Todd W., Mushinski, Ryan M., Bielawski, Christopher W., Roberts, John C., Wang, Wei-E, Banerjee, Sanjay K., Harris, H. Rusty

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Thermodynamics of the Zr-H System von Wang, Wei-E, Olander, Donald R.

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Hydrogen uptake mechanism of a silicone-rubber DEB getter mixture von Balooch, M., Wang, Wei-E, Kirkpatrick, J. R.

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High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2 Gate Dielectric von Mitard, Jerome, Jaeger, Brice De, Eneman, Geert, Dobbie, Andrew, Myronov, Maksym, Kobayashi, Masaharu, Geypen, Jef, Bender, Hugo, Vincent, Benjamin, Krom, Raymond, Franco, Jacopo, Winderickx, Gillis, Vrancken, Evi, Vanherle, Wendy, Wang, Wei-E, Tseng, Joshua, Loo, Roger, Meyer, Kristin De, Caymax, Matty, Pantisano, Luigi, Leadley, David R, Meuris, Marc, Absil, Philippe P, Biesemans, Serge, Hoffmann, Thomas

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Oxide Trapping in the InGaAs- \hbox \hbox System and the Role of Sulfur in Reducing the \hbox\hbox Trap Density von Alian, Alireza, Brammertz, G., Degraeve, R., Moonju Cho, Merckling, C., Lin, Dennis, Wang, Wei-E, Caymax, M., Meuris, M., De Meyer, K., Heyns, M.

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