Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates von Chiu, Ching-Hsueh, Lin, Da-Wei, Lin, Chien-Chung, Li, Zhen-Yu, Chang, Wei-Ting, Hsu, Hung-Wen, Kuo, Hao-Chung, Lu, Tien-Chang, Wang, Shing-Chung, Liao, Wei-Tsai, Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko

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Heat resistive dielectric multi-layer micro-mirror array in epitaxial lateral overgrowth gallium nitride von Huang, Chen-Yang, Ku, Hao-Min, Liao, Wei-Tsai, Chao, Chu-Li, Tsay, Jenq-Dar, Chao, Shiuh

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Improvement in the characteristics of GaN-based light-emitting diodes by inserting AlGaN-GaN short-period superlattices in GaN underlayers von Wang, Cheng-Liang, Gong, Jyh-Rong, Yeh, Ming-Fa, Wu, Bor-Jen, Liao, Wei-Tsai, Lin, Tai-Yuan, Lin, Chung-Kwei

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Observation of compositional pulling phenomenon in AlxGa1−xN (0.4<x<1.0) films grown on (0001) sapphire substrates von Tsai, Yu-Li, Wang, Cheng-Liang, Lin, Po-Hung, Liao, Wei-Tsai, Gong, Jyh-Rong

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Optical properties of (11¯01) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates von Chiu, Ching-Hsueh, Lin, Da-Wei, Lin, Chien-Chung, Li, Zhen-Yu, Chen, Yi-Chen, Ling, Shih-Chun, Kuo, Hao-Chung, Lu, Tien-Chang, Wang, Shing-Chung, Liao, Wei-Tsai, Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko

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Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes von Wang, Cheng-Liang, Tsai, Ming-Chang, Gong, Jyh-Rong, Liao, Wei-Tsai, Lin, Ping-Yuan, Yen, Kuo-Yi, Chang, Chia-Chi, Lin, Hsin-Yueh, Hwang, Shen-Kwang

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Effects of Al-containing Intermediate III-nitride Strained Multilayers on the Threading Dislocation Density and Optical Properties of GaN Films von Gong, Jyh-Rong, Tseng, Su-Fen, Huang, Cheng-Wei, Tsai, Yu-Li, Liao, Wei-Tsai, Wang, Cheng-Liang, Shi, Bing-Hong, Lin, Tai-Yuan

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Erratum: "Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates" von Chiu, Ching-Hsueh, Lin, Da-Wei, Lin, Chien-Chung, Li, Zhen-Yu, Chang, Wei-Ting, Hsu, Hung-Wen, Kuo, Hao-Chung, Lu, Tien-Chang, Wang, Shing-Chung, Liao, Wei-Tsai, Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko

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Influence of the trench depths of grooved GaN templates on the characteristics of overgrown AlGaN films von Wang, Cheng-Liang, Wang, Wei-Lin, Liao, Wei-Tsai, Gong, Jyh-Rong, Lin, Chung-Kwei, Lin, Tai-Yuan

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Growth of AlGaN and GaN films on (11 20) Al2O3 substrates and the influence of V/III ratio on the properties of GaN films von LIAO, Wei-Tsai, GONG, Jyh-Rong, LIN, Shih-Wei, WANG, Cheng-Liang, LIN, Tai-Yuan, CHEN, Keh-Chang, CHENG, Yi-Cheng, LIN, Wen-Jen

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Deposition of AlGaN films on (111) Si substrates and optimization of GaN growth on Si using intermediate-temperature AlGaN buffer layers von Wang, Cheng-Liang, Gong, Jyh-Rong, Liao, Wei-Tsai, Lin, Chung-Kwei, Lin, Tai-Yuan

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On the characteristics of AlGaN films grown on (111) and (001) Si substrates von Wang, Cheng-Liang, Gong, Jyh-Rong, Liao, Wei-Tsai, Wang, Wei-Lin, Lin, Tai-Yuan, Lin, Chung-Kwei

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Strain-induced effect on the Al incorporation in AlGaN films and the properties of AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition von Gong, Jyh-Rong, Liao, Wei-Tsai, Hsieh, Shyang-Lin, Lin, Po-Hung, Tsai, Yu-Li

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Characteristics and Interactions of Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates With or Without Short-Period Superlattice Insertion von Wang, Wei-Lin, Gong, Jyh-Rong, Wang, Cheng-Liang, Liao, Wei-Tsai, He, Ju-Liang, Chi, Yuan-Chen, Shi, Jen-Bin

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On the optical properties and microstructures of GaN films inserted with low-temperature Al0.8Ga0.2N interlayers von SHIH, Bing-Hong, GONG, Jyh-Rong, LIN, Shih-Wei, TSAI, Yu-Li, LIAO, Wei-Tsai, LIN, Tai-Yuan, LEE, Ying-Te, CHANG, Jin-Gor

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The properties of AlGaN films and AlGaN/GaN heterostructures grown on (1120) sapphire substrates von LIAO, Wei-Tsai, GONG, Jyh-Rong, LIN, Shih-Wei, WANG, Cheng-Liang, CHEN, Keh-Chang, SHI, Jen-Bin, CHANG, Sheng-Yueh, LIN, Kuan-Jiuh

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Growth of AlGaN and GaN films on ( 1 1 2 ¯ 0 ) Al 2O 3 substrates and the influence of V/III ratio on the properties of GaN films von Liao, Wei-Tsai, Gong, Jyh-Rong, Lin, Shih-Wei, Wang, Cheng-Liang, Lin, Tai-Yuan, Chen, Keh-Chang, Cheng, Yi-Cheng, Lin, Wen-Jen

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Compositional pulling effect in high Al-content AlGaN films grown on (0001) sapphire substrates von Yu-Li Tsai, Cheng-Liang Wang, Po-Hung Lin, Wei-Tsai Liao, Jyh-Rong Gong

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On the optical properties and microstructures of GaN films inserted with low-temperature Al 0.8Ga 0.2N interlayers von Shih, Bing-Hong, Gong, Jyh-Rong, Lin, Shih-Wei, Tsai, Yu-Li, Liao, Wei-Tsai, Lin, Tai-Yuan, Lee, Ying-Te, Chang, Jin-Gor

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Versatile Polarization Generation with an Aluminum Plasmonic Metasurface von Wu, Pin Chieh, Tsai, Wei-Yi, Chen, Wei Ting, Huang, Yao-Wei, Chen, Ting-Yu, Chen, Jia-Wern, Liao, Chun Yen, Chu, Cheng Hung, Sun, Greg, Tsai, Din Ping

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