Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field von Yang, Ziwen, Li, Rui, Wei, Qiyuan, Yu, Tao, Zhang, Yanzhao, Chen, Weihua, Hu, Xiaodong

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Yosida-regularization based differential equation approach to generalized equations with applications to nonlinear convex programming von Wei, Qiyuan, Zhang, Liwei

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Inclined Dislocation Generation in Compressive-Strain-Enhanced Mg-Doped GaN/Al0.15Ga0.85N Superlattice with AlN Interlayer von Li, Lei, Li, Ding, Wei, Qiyuan, Chen, Weihua, Yang, Zhijian, Wu, Jiejun, Zhang, Guoyi, Hu, Xiaodong

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Evidence of Two-Dimensional Hole Gas in p-Type AlGaN/AlN/GaN Heterostructures von Wei, Qiyuan, Wu, Zhihao, Sun, Kewei, Ponce, Fernando A., Hertkorn, Joaquim, Scholz, Ferdinand

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Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapor deposition von JIANPING LIU, YUN ZHANG, SUN, Kewei W, FISCHER, Alec M, PONCE, Fernando A, LOCHNER, Zachary, KIM, Seong-Soo, KIM, Hyunsoo, RYOU, Jae-Hyun, SHEN, Shyh-Chiang, DOUG YODER, P, DUPUIS, Russell D, WEI, Qiyuan Y

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Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition von Liu, Jianping, Zhang, Yun, Lochner, Zachary, Kim, Seong-Soo, Kim, Hyunsoo, Ryou, Jae-Hyun, Shen, Shyh-Chiang, Doug Yoder, P., Dupuis, Russell D., Wei, Qiyuan Y., Sun, Kewei W., Fischer, Alec M., Ponce, Fernando A.

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Biodegradation of tetrabromobisphenol A in the sewage sludge process von Peng, Xingxing, Wang, Zhangna, Wei, Dongyang, Huang, Qiyuan, Jia, Xiaoshan

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Rock: Cleaning Data with both ML and Logic Rules von Bao, Zian, Bie, Binbin, Fan, Wenfei, Li, Daji, Li, Mengyun, Lin, Kaiwen, Lin, Wei, Liu, Peijie, Liu, Peng, Lv, Zhicong, Ouyang, Mingliang, Sun, Chenyang, Tang, Shuai, Wang, Yaoshu, Wei, Qiyuan, Wu, Xiangqian, Xie, Min, Zhang, Jing, Zhao, Runxiao, Zhu, Jie, Zhu, Yilin

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Biodegradation of tetrabromobisphenol A in the sewage sludge process von Xingxing Peng Zhangna Wang Dongyang Wei Qiyuan Huang Xiaoshan Jia

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Compositional instability in InAlN/GaN lattice-matched epitaxy von Wei, Q. Y., Li, T., Huang, Y., Huang, J. Y., Chen, Z. T., Egawa, T., Ponce, F. A.

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Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m -Plane GaN von Fischer, Alec M., Wu, Zhihao, Sun, Kewei, Wei, Qiyuan, Huang, Yu, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Amano, Hiroshi, Ponce, Fernando A.

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Donor-related cathodoluminescence of p -AlGaN electron blocking layer embedded in ultraviolet laser diode structure von Li, Rui, Zhang, Jingming, Chen, Li, Zhao, Huabo, Yang, Ziwen, Yu, Tao, Li, Ding, Liu, Zhicheng, Chen, Weihua, Yang, Zhijian, Zhang, Guoyi, Gan, Zizhao, Hu, Xiaodong, Wei, Qiyuan, Li, Ti, Ponce, F. A.

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Display panel and display device von WEI QIYUAN

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Display module and display device von WEI QIYUAN

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Modified transmission line model to investigate non-Ohmic contact behavior and its application on GaN von Wang, Yanjie, Chen, Weixi, Wei, Qiyuan, Chen, Weihua, Li, Rui, Pan, Yaobo, Yang, Zhijian, Zhang, Guoyi, Hu, Xiaodong

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Device, apparatus, and method for semiconductor transfer von Lin, Chien-hung, Wang, Ying-chi, Liu, Cheng-ming, Kung, Li-wei, Wei, Qiyuan

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Facet on a gallium and nitrogen containing laser diode von Sztein, Alexander, Raring, James W, Oh, Sang-Ho, Wei, Qiyuan, Skahan, Phillip, Yonkee, Ben, Huang, Hua

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Multiplex shift register unit and driving circuit thereof, display panel and display device von Hu, Shuang, Wu, Hailong, Tang, Xiuzhu, Li, Qi, Wei, Qiyuan, Chen, Shuai, Tian, Zhenguo

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DEVICE, APPARATUS, AND METHOD FOR SEMICONDUCTOR TRANSFER von WEI, Qiyuan, KUNG, Li-wei, WANG, Ying-chi, LIN, Chien-hung, LIU, Cheng-ming

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Shift register and drive method thereof, and gate drive circuit von Wu, Hailong, Wang, Qian, Tang, Xiuzhu, Li, Qi, Liang, Xuebo, Wei, Qiyuan, Chen, Shuai, Yuan, Jianfeng, Zhang, Zhi

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