Bias induced strain in AlGaN∕GaN heterojunction field effect transistors and its implications von Anwar, A. F. M., Webster, Richard T., Smith, Kurt V.

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Measurements of charging in capacitive microelectromechanical switches von Reid, J.R., Webster, R.T.

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Impact ionization in InAlAs/InGaAs/InAlAs HEMT's von Webster, R.T., Shangli Wu, Anwar, A.F.M.

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A physics-based frequency dispersion model of GaN MESFETs von Islam, S.S., Anwar, A.F.M., Webster, R.T.

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Carrier trapping and current collapse mechanism in GaN metal–semiconductor field-effect transistors von Anwar, A. F. M., Islam, Syed S., Webster, Richard T.

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Noncontact measurement of charge induced voltage shift in capacitive MEM-switches von Reid, J.R., Webster, R.T., Starman, L.A.

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Noise in Metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTs von Webster, Richard T., Anwar, A.F.M.

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Response to “Comment on ‘Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors’ ” [Appl. Phys. Lett. 86, 016101 (2005)] von Anwar, A. F. M., Islam, Syed S., Webster, Richard T.

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Energy bandgap of AlxGa1−xAs1−ySby and conduction band discontinuity of AlxGa1−xAs1−ySby/InAs and AlxGa1−xAs1−ySby/InGaAs heterostructures von Anwar, A.F.M, Webster, RT

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Temperature Dependent Transport Parameters in Short GaN Structures von Anwar, A.F.M., Wu, Shangli, Webster, R.T.

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Energy bandgap of Al xGa 1− xAs 1− ySb y and conduction band discontinuity of Al xGa 1− xAs 1− ySb y/InAs and Al xGa 1− xAs 1− ySb y/InGaAs heterostructures von Anwar, A.F.M, Webster, RT

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On the possible effects of AlGaAsSb growth parameters on the 2-DEG concentration in AlGaAsSb/InGaAs/AlGaAsSb QW's von Anwar, A.F.M., Webster, R.T.

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Determination of InP HEMT noise parameters and S-parameters to 60 GHz von Webster, R.T., Slobodnik, A.J., Roberts, G.A.

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Medication-Related Problems in Aging: Implications for Professionals and Policy Makers von Perry, Daniel, Webster, R. Tim

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Investigation of microstrip radial stub CAD models from 2 to 60 GHz von Slobodnik Jr, Andrew J., Webster, Richard T.

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Physics-Based Intrinsic Model for AlGaN/GaN HEMTs von Wu, Shangli, Webster, Richard T., Anwar, A. F. M.

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X-cut quartz for improved surface acoustic wave temperature stability von WEBSTER, R. T

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18-42 GHz experimental verification of microstrip coupler and open end capacitance models von Slobodnik, A.J., Webster, R.T., Roberts, G.A.

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1.5-GHz GaAs Surface Acoustic Wave Delay Lines (Short Paper) von Webster, R.T.

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Cubic temperature dependence for SAWs on X-cut quartz von Webster, R.T., Silva, J.H.

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