An accuracy assessment of forest disturbance mapping in the western Great Lakes von Zimmerman, P.L., Housman, I.W., Perry, C.H., Chastain, R.A., Webb, J.B., Finco, M.V.

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AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Oxide Insulator Grown by Photoelectrochemical Oxidation Method von Li-Hsien Huang, Shu-Hao Yeh, Ching-Ting Lee, Haipeng Tang, Bardwell, J., Webb, J.B.

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Optical investigation of GaSb thin films grown on GaAs by metalorganic magnetron sputtering von Feng, Z.C., Hou, F.C., Webb, J.B., Shen, Z.X., Rusli, E., Ferguson, I.T., Lu, W.

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Structure characterization of AlN buffer layers grown on (0 0 0 1) sapphire by magnetron sputter epitaxy von Tang, H, Webb, J.B, Moisa, S, Bardwell, J.A, Rolfe, S

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Determination of elastic strains in epitaxial layers by HREM von Robertson, M.D., Currie, J.E., Corbett, J.M., Webb, J.B.

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Surface Passivation of AlGaN/GaN HFETs Using AlN Layer Deposited by Reactive Magnetron Sputtering von Liu, Y., Bardwell, J.A., McAlister, S.P., Rolfe, S., Tang, H., Webb, J.B.

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AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy von Haffouz, S., Tang, H., Bardwell, J.A., Hsu, E.M., Webb, J.B., Rolfe, S.

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Computing bases of modular forms using the graded algebra structure von Lam, Michael O., McClelland, Noah S., Petty, Matthew R., Webb, John J. B.

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The effect of local anaesthetic cream (EMLA ®) applied with an occlusive dressing on skin thickness. Does it matter? von Tahir, A., Webb, J.B., Allen, G., Nancarrow, J.D.

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AlGaN/GaN HFET devices on SiC grown by ammonia-MBE with high f T and f MAX von Bardwell, J.A., Liu, Y., Tang, H., Webb, J.B., Rolfe, S.J., Lapointe, J.

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Nitride-based 2DEG photodetectors with a large AC responsivity von Chang, S.J., Kuan, T.M., Ko, C.H., Su, Y.K., Webb, J.B., Bardwell, J.A., Liu, Y., Tang, H., Lin, W.J., Cherng, Y.T., Lan, W.H.

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Nitride-based HFETs with carrier confinement layers von Su, Y.K, Chang, S.J, Kuan, T.M, Ko, C.H, Webb, J.B, Lan, W.H, Cherng, Y.T, Chen, S.C

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Flame burns: a forgotten danger of diathermy? von Webb, J.B., Balaratnam, S., Park, A.J.

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Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy von Tang, H., Webb, J.B., Bardwell, J.A., Rolfe, S., MacElwee, T.

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Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching von Su, Y.K, Chang, S.J, Kuan, T.M, Ko, C.H, Webb, J.B, Lan, W.H, Cherng, Y.T, Chen, S.C

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High-speed AlGaN/GaN HFETs fabricated by wet etchingmesa isolation von Maher, H., DiSanto, D.W., Dvorak, M.W., Soerensen, G., Bolognesi, C.R., Bardwell, J.A., Tang, H., Webb, J.B.

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Investigations of low-frequency noise of GaN-based heterostructure field-effect transistors von Wei, S.C., Su, Y.K., Kuan, T.M., Wang, R.L., Chang, S.J., Ko, C.H., Webb, J.B., Bardwell, J.A.

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High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation von Maher, H, DiSanto, D W, Dvorak, M W, Soerensen, G, Bolognesi, C R, Bardwell, J A, Tang, H, Webb, J B

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GaN/AlGaN Two-Dimensional Electron Gas Grown by Ammonia-MBE on MOCVD GaN Template von Tang, H., Webb, J.B., Rolfe, S., Bardwell, J.A., Tomka, D., Coleridge, P., Ko, C.H., Su, Y.K., Chang, S.J.

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Growth and characterisation of InSb/In 1− xAl xSb strained-layer superlattices by magnetron sputter epitaxy von Webb, J.B., Lockwood, D.J., Northcott, D.

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