A novel mechanism to explain wafer bending during the growth of SiC films on Si von Watts, Bernard E., Attolini, Giovanni, Bosi, Matteo, Frigeri, Cesare

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Wafer curvature analysis in 3C-SiC layers grown on (001) and (111) Si substrates von Bosi, Matteo, Attolini, Giovanni, Watts, Bernard E., Rossi, Francesca, Ferrari, Claudio, Riesz, Ferenc, Jiang, Liudi

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Growth and Characterization of 3C-SiC Films for Micro Electro Mechanical Systems (MEMS) Applications von Bosi, Matteo, Watts, Bernard E, Attolini, Giovanni, Ferrari, Claudio, Frigeri, Cesare, Salviati, Giancarlo, Poggi, Antonella, Mancarella, Fulvio, Roncaglia, Alberto, Martínez, Oscar, Hortelano, Vanesa

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Sol-gel growth and characterization of In2O3 thin films von Palomares-Sanchez, Salvador A., Watts, Bernard E., Klimm, Detlef, Baraldi, Andrea, Parisini, Antonella, Vantaggio, Salvatore, Fornari, Roberto

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Early age bond stress-slip behaviour of macro-synthetic fibre reinforced concrete von Watts, Murray J., Amin, Ali, Bernard, E. Stefan, Gilbert, R. Ian, Facconi, Luca

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Electronic properties of AlVO4 for gas sensor applications von Palomares-Sánchez, Salvador Antonio, Chumakov, Yuri M., Ponce-Castañeda, Selina, Watts, Bernard E., Leccabue, Fabrizio, Bocelli, Gabrielle

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Electronic properties of AIVO4 for gas sensor applications von PALOMARES-SANCHEZ, Salvador Antonio, CHUMAKOV, Yuri M, PONCE-CASTANEDA, Selina, WATTS, Bernard E, LECCABUE, Fabrizio, BOCELLI, Gabrielle

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A Healthcare System‐Level Intervention to Increase Naloxone Availability for Patients With Opioid Prescriptions von Siff, Jonathan E., Margolius, David, Papp, Joan, Boulanger, Bernard, Watts, Brook

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Evaluation of Curvature and Stress in 3C-SiC Grown on Differently Oriented Si Substrates von Besagni, Tullo, Attolini, Giovanni, Riesz, Ferenc, Jiang, Liu Di, Watts, Bernard Enrico, Bosi, Matteo, Rossi, Francesca, Ferrari, Claudio

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Structural properties of a holmium iron carbide interstitial compound, Ho2Fe17C3-x von Bocelli, Gabriele, Calestani, Gianluca, Leccabue, Fabrizio, Watts, Bernard E, Sanchez, L. Jose Luis

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Electronic properties of AlVO sub(4) for gas sensor applications von Palomares-Sanchez, Salvador Antonio, Chumakov, Yuri M, Ponce-Castaneda, Selina, Watts, Bernard E, Leccabue, Fabrizio, Bocelli, Gabrielle

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A Study of the Morphology of 3C-SiC Layers Grown at Different C/Si Ratios von Attolini, Giovanni, Watts, Bernard E., Bosi, Matteo, Rossi, Francesca, Riesz, Ferenc

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β-SiC NWs Grown on Patterned and MEMS Silicon Substrates von Attolini, Giovanni, Ferri, Matteo, Mancarella, Fulvio, Roncaglia, Alberto, Watts, Bernard Enrico, Bosi, Matteo, Rossi, Francesca, Poggi, Antonella, Salviati, Giancarlo

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Strain Evaluation in SiC MEMS Test Structures von Bosi, Matteo, Attolini, Giovanni, Watts, Bernard E., Frigeri, Cesare, Rossi, Francesca, Poggi, Antonella, Roncaglia, Alberto, Mancarella, Fulvio, Martinez, Oscar, Hortelano, Vanesa

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Strain Evaluation in SiC MEMS Test Structures von Bosi, Matteo, Attolini, Giovanni, Watts, Bernard E., Frigeri, Cesare, Rossi, Francesca, Poggi, Antonella, Roncaglia, Alberto, Mancarella, Fulvio, Martinez, Oscar, Hortelano, Vanesa

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A Study of the Morphology of 3C-SiC Layers Grown at Different C/Si Ratios von Attolini, Giovanni, Watts, Bernard E., Bosi, Matteo, Rossi, Francesca, Riesz, Ferenc

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REPORT OF THE SPECIAL TASK FORCE ON FORMAL OPINION 85-352 von Sax, Paul J., Holden, James P., Tannenwald, Theodore, Watts, David E., Wolfman, Bernard

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Donald Bernard Longmore von Watts, Geoff

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Bernard Fisher von Watts, Geoff

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The Design of a Manual and an Automatic Pallet Bin Filler von Bernard M. Watts

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