Asymmetric organocatalytic desymmetrization of 4,4-disubstituted cyclohexadienones at high pressure: a new powerful strategy for the synthesis of highly congested chiral cyclohexen... von Miyamae, Naomu, Watanabe, Naruhisa, Moritaka, Maya, Nakano, Keiji, Ichikawa, Yoshiyasu, Kotsuki, Hiyoshizo

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ChemInform Abstract: Organocatalytic Friedel—Crafts Benzylation of Heteroaromatic and Aromatic Compounds via an S N 1 Pathway von Watanabe, Naruhisa, Matsugi, Aoi, Nakano, Keiji, Ichikawa, Yoshiyasu, Kotsuki, Hiyoshizo

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ChemInform Abstract: Organocatalytic Friedel-Crafts Benzylation of Heteroaromatic and Aromatic Compounds via an SN1 Pathway von Watanabe, Naruhisa, Matsugi, Aoi, Nakano, Keiji, Ichikawa, Yoshiyasu, Kotsuki, Hiyoshizo

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ChemInform Abstract: Asymmetric Organocatalytic Desymmetrization of 4,4-Disubstituted Cyclohexadienones at High Pressure: A New Powerful Strategy for the Synthesis of Highly Conges... von Miyamae, Naomu, Watanabe, Naruhisa, Moritaka, Maya, Nakano, Keiji, Ichikawa, Yoshiyasu, Kotsuki, Hiyoshizo

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Comparative Study of Hall Effect Mobility in Inversion Layer of 4H-SiC MOSFETs With Nitrided and Phosphorus-Doped Gate Oxides von Noguchi, Munetaka, Watanabe, Tomokatsu, Watanabe, Hiroshi, Kita, Koji, Miura, Naruhisa

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Novel T-shaped Electrodes for PEM Water Electrolysis and Numerical Evaluation of Three-dimensional Potential Distribution von TSUKASE, Naruhisa, WATANABE, Konosuke, ARAKI, Takuto, NAGASAWA, Kensaku, MITSUSHIMA, Shigenori

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NIRS3: The Near Infrared Spectrometer on Hayabusa2 von Iwata, Takahiro, Kitazato, Kohei, Abe, Masanao, Ohtake, Makiko, Arai, Takehiko, Arai, Tomoko, Hirata, Naru, Hiroi, Takahiro, Honda, Chikatoshi, Imae, Naoya, Komatsu, Mutsumi, Matsunaga, Tsuneo, Matsuoka, Moe, Matsuura, Shuji, Nakamura, Tomoki, Nakato, Aiko, Nakauchi, Yusuke, Osawa, Takahito, Senshu, Hiroki, Takagi, Yasuhiko, Tsumura, Kohji, Takato, Naruhisa, Watanabe, Sei-ichiro, Barucci, Maria Antonietta, Palomba, Ernesto, Ozaki, Masanobu

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Coulomb-limited mobility in 4H-SiC MOS inversion layer as a function of inversion-carrier average distance from MOS interface von Noguchi, Munetaka, Iwamatsu, Toshiaki, Amishiro, Hiroyuki, Watanabe, Hiroshi, Kita, Koji, Miura, Naruhisa

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Body Potential Control via p-Type Contact Resistance and Its Influence on Switching Characteristics of 4H-SiC MOSFETs von Tominaga, Takaaki, Iwamatsu, Toshiaki, Nakao, Yukiyasu, Amishiro, Hiroyuki, Watanabe, Hiroshi, Tomohisa, Shingo, Miura, Naruhisa, Nakata, Shuhei

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The SEEDS High-Contrast Imaging Survey of Exoplanets Around Young Stellar Objects von Uyama, Taichi, Hashimoto, Jun, Kuzuhara, Masayuki, Mayama, Satoshi, Akiyama, Eiji, Currie, Thayne, Livingston, John, Kudo, Tomoyuki, Kusakabe, Nobuhiko, Abe, Lyu, Brandner, Wolfgang, Brandt, Timothy D., Carson, Joseph C., Egner, Sebastian, Feldt, Markus, Goto, Miwa, Grady, Carol A., Guyon, Olivier, Hayano, Yutaka, Hayashi, Masahiko, Hayashi, Saeko S., Henning, Thomas, Hodapp, Klaus W., Ishii, Miki, Iye, Masanori, Janson, Markus, Kandori, Ryo, Knapp, Gillian R., Kwon, Jungmi, Matsuo, Taro, Mcelwain, Michael W., Miyama, Shoken, Morino, Jun-Ichi, Moro-Martin, Amaya, Nishimura, Tetsuo, Pyo, Tae-Soo, Serabyn, Eugene, Suenaga, Takuya, Suto, Hiroshi, Suzuki, Ryuji, Takahashi, Yasuhiro H., Takami, Michihiro, Takato, Naruhisa, Terada, Hiroshi, Thalmann, Christian, Turner, Edwin L., Watanabe, Makoto, Wisniewski, John, Yamada, Toru, Takami, Hideki, Usuda, Tomonori, Tamura, Motohide

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Thermal infrared and optical photometry of Asteroidal Comet C/2002 CE10 von Sekiguchi, Tomohiko, Miyasaka, Seidai, Dermawan, Budi, Mueller, Thomas, Takato, Naruhisa, Watanabe, Junichi, Boehnhardt, Hermann

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Carrier transport properties in inversion layer of Si-face 4H-SiC MOSFET with nitrided oxide von Noguchi, Munetaka, Iwamatsu, Toshiaki, Amishiro, Hiroyuki, Watanabe, Hiroshi, Miura, Naruhisa, Kita, Koji, Yamakawa, Satoshi

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Compatibility of POCl3 Gate Process with the Fabrication of Vertical 4H-SiC MOSFETs von Noguchi, Munetaka, Watanabe, Tomokatsu, Tomohisa, Shingo, Miura, Naruhisa

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Novel T-shaped Electrodes for PEM Water Electrolysis and Numerical Evaluation of Three-dimensional Potential Distribution von TSUKASE, Naruhisa, WATANABE, Konosuke, ARAKI, Takuto, NAGASAWA, Kensaku, MITSUSHIMA, Shigenori

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Direct observation and three dimensional structural analysis for threading mixed dislocation inducing current leakage in 4H-SiC IGBT von Konishi, Kazuya, Nakamura, Yu, Nagae, Akemi, Kawabata, Naoyuki, Tanaka, Takanori, Tomita, Nobuyuki, Watanabe, Hiroshi, Tomohisa, Shingo, Miura, Naruhisa

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Impact of Recovery Characteristics on Switching Loss of SiC MOSFETs von Nakata, Shuhei, Iwamatsu, Toshiaki, Amishiro, Hiroyuki, Yamakawa, Satoshi, Tominaga, Takaaki, Watanabe, Hiroshi, Nakao, Yukiyasu, Miura, Naruhisa

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SEEDS ADAPTIVE OPTICS IMAGING OF THE ASYMMETRIC TRANSITION DISK OPH IRS 48 IN SCATTERED LIGHT von Follette, Katherine B, Grady, Carol A, Swearingen, Jeremy R, Sitko, Michael L, Champney, Elizabeth H, van der Marel, Nienke, Takami, Michihiro, Kuchner, Marc J, Close, Laird M, Muto, Takayuki

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Subaru/HiCIAO HKs Imaging of LKHa 330: Multi-band Detection of the Gap and Spiral-like Structures von Uyama, Taichi, Hashimoto, Jun, Muto, Takayuki, Akiyama, Eiji, Dong, Ruobing, Leon, Jerome de, Sakon, Itsuki, Kudo, Tomoyuki, Kusakabe, Nobuhiko, Kuzuhara, Masayuki, Bonnefoy, Mickael, Abe, Lyu, Brandner, Wolfgang, Brandt, Timothy D., Carson, Joseph C., Currie, Thayne, Egner, Sebastian, Feldt, Markus, Fung, Jeffrey, Goto, Miwa, Grady, Carol A., Guyon, Olivier, Hayano, Yutaka, Hayashi, Masahiko, Hayashi, Saeko S., Henning, Thomas, Hodapp, Klaus W., Ishii, Miki, Iye, Masanori, Janson, Markus, Kandori, Ryo, Knapp, Gillian R., Kwon, Jungmi, Matsuo, Taro, Mayama, Satoshi, Mcelwain, Michael W., Miyama, Shoken, Morino, Jun-Ichi, Moro-Martin, Amaya, Nishimura, Tetsuo, Pyo, Tae-Soo, Serabyn, Eugene, Sitko, Michael L., Suenaga, Takuya, Suto, Hiroshi, Suzuki, Ryuji, Takahashi, Yasuhiro H., Takami, Michihiro, Takato, Naruhisa, Terada, Hiroshi, Thalmann, Christian, Turner, Edwin L., Watanabe, Makoto, Wisniewski, John, Yamada, Toru, Yang, Yi, Takami, Hideki, Usuda, Tomonori, Tamura, Motohide

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4H-SiC Trench MOSFET with Bottom Oxide Protection von Yamamoto, Yasuki, Fujiwara, Nobuo, Tanaka, Rina, Nakata, Shuhei, Sugawara, Katsutoshi, Fukui, Yutaka, Yamakawa, Satoshi, Kagawa, Yasuhiro, Imaizumi, Masayuki, Miura, Naruhisa

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Hall effect mobility in inversion layer of 4H-SiC MOSFETs with a thermally grown gate oxide von Noguchi, Munetaka, Iwamatsu, Toshiaki, Amishiro, Hiroyuki, Watanabe, Hiroshi, Kita, Koji, Miura, Naruhisa

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