Donor levels in Si-doped AlGaAs grown by MBE von WATANABE, M. O, MORIZUKA, K, MASHITA, M, ASHIZAWA, Y, ZOHTA, Y

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On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopy von Zohta, Yasuhito, Watanabe, Miyoko Oku

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Electron activation energy in Si-doped AlGaAs grown by MBE von WATANABE, M. O, MAEDA, H

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Band discontinuity for GaAs/AlGaAs heterojunction determined by C-V profiling technique von WATANABE, M. O, YOSHIDA, J, MASHITA, M, NAKASANI, T, HOJO, A

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Growth condition independence observed for DX center in Si-doped AlGaAs grown by molecular beam epitaxy von ASHIZAWA, Y, OKU WATANABE, M

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DLTS Study of RIE-Induced Deep Levels in Si Using p + n Diode Arrays von Watanabe, Miyoko Oku, Taguchi, Minoru, Kanzaki, Koichi, Zohta, Yasuhito

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AsH3 to Ga(CH3)3 mole ratio dependence of dominant deep levels in MOCVD GaAs von WATANABE, M. O, TANAKA, A, UDAGAWA, T, NAKANISI, T, ZOHTA, Y

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Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAs von Watanabe, Miyoko Oku, Tanaka, Atsushi, Nakanisi, Takatosi, Zohta, Yasuhito

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AsH 3 to Ga(CH 3 ) 3 Mole Ratio Dependence of Dominant Deep Levels in MOCVD GaAs von Watanabe, Miyoko Oku, Tanaka, Atsushi, Udagawa, Takashi, Nakanishi, Takatosi, Zohta, Yasuhito

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