Planar integrated metasurfaces for highly-collimated terahertz quantum cascade lasers von Liang, Guozhen, Dupont, Emmanuel, Fathololoumi, Saeed, Wasilewski, Zbigniew R., Ban, Dayan, Liang, Hou Kun, Zhang, Ying, Yu, Siu Fung, Li, Lianhe H., Davies, Alexander Giles, Linfield, Edmund H., Liu, Hui Chun, Wang, Qi Jie

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True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy von Skierbiszewski, Czeslaw, Siekacz, Marcin, Turski, Henryk, Muziol, Grzegorz, Sawicka, Marta, Wolny, Pawel, Cywiński, Grzegorz, Marona, Lucja, Perlin, Piotr, Wiśniewski, Przemys$ł$aw, Albrecht, Martin, Wasilewski, Zbigniew R, Porowski, Sylwester

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Unintentional As incorporation into AlSb and interfacial layers within InAs/AlSb superlattices von Hu, Yunong, Tam, Man Chun, Wasilewski, Zbigniew R.

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AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy von Skierbiszewski, Czes$ł$aw, Siekacz, Marcin, Turski, Henryk, Muzio$ł$, Grzegorz, Sawicka, Marta, Feduniewicz-Żmuda, Anna, Cywiński, Grzegorz, Cheze, Caroline, Grzanka, Szymon, Perlin, Piotr, Wiśniewski, Przemys$ł$aw, Wasilewski, Zbigniew R, Porowski, Sylwester

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Atomically Smooth Defect-Free III-As Heterostructures on InP(111) Substrate for Next-Generation Electronic Devices von Sadeghi, Ida, Pofelski, Alexandre, Farkhondeh, Hanieh, Fernández-Delgado, Natalia, Tam, Man Chun, Leung, Kam T., Botton, Gianluigi A., Wasilewski, Zbigniew R.

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Attenuation and velocity of 56 GHz longitudinal phonons in gallium arsenide from 50 to 300 K von Chen, Wei, Maris, Humphrey J., Wasilewski, Zbigniew R., Tamura, Shin-Ichiro

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Pixelless 1.5-μm up-conversion imaging device fabricated by wafer fusion von Ban, D., Hui Luo, Liu, H.C., Wasilewski, Z.R., Buchanan, M.

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Coupling and Entangling of Quantum States in Quantum Dot Molecules von Bayer, M., Hawrylak, P., Hinzer, K., Fafard, S., Korkusinski, M., Wasilewski, Z. R., Stern, O., Forchel, A.

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Background-limited terahertz quantum-well photodetector von Luo, H., Liu, H. C., Song, C. Y., Wasilewski, Z. R.

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Stable electroluminescence in ambipolar dopant-free lateral p–n junctions von Tian, Lin, Sfigakis, Francois, Shetty, Arjun, Kim, Ho-Sung, Sherlekar, Nachiket, Hosseini, Sara, Tam, Man Chun, van Kasteren, Brad, Buonacorsi, Brandon, Merino, Zach, Harrigan, Stephen R., Wasilewski, Zbigniew, Baugh, Jonathan, Reimer, Michael E.

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Quantum dot infrared photodetectors von Liu, H. C., Gao, M., McCaffrey, J., Wasilewski, Z. R., Fafard, S.

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Microwave radiation induced magneto-oscillations in the longitudinal and transverse resistance of a two-dimensional electron gas von Studenikin, S.A., Potemski, M., Coleridge, P.T., Sachrajda, A.S., Wasilewski, Z.R.

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Terahertz Emission in Asymmetric Quantum Wells by Frequency Mixing of Midinfrared Waves von Dupont, E., Wasilewski, Z.R., Liu, H.C.

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Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy von Skierbiszewski, C., Wasilewski, Z. R., Siekacz, M., Feduniewicz, A., Perlin, P., Wisniewski, P., Borysiuk, J., Grzegory, I., Leszczynski, M., Suski, T., Porowski, S.

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Effect of doping concentration on the performance of terahertz quantum-cascade lasers von Liu, H. C., Wächter, M., Ban, D., Wasilewski, Z. R., Buchanan, M., Aers, G. C., Cao, J. C., Feng, S. L., Williams, B. S., Hu, Q.

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Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: A new approach in controlling the bandwidth von Haffouz, S., Raymond, S., Lu, Z.G., Barrios, P.J., Roy-Guay, D., Wu, X., Liu, J.R., Poitras, D., Wasilewski, Z.R.

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Frequency quenching of microwave-induced resistance oscillations in a high-mobility two-dimensional electron gas von Studenikin, S. A., Sachrajda, A. S., Gupta, J. A., Wasilewski, Z. R., Fedorych, O. M., Byszewski, M., Maude, D. K., Potemski, M., Hilke, M., West, K. W., Pfeiffer, L. N.

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Resistively detected nuclear magnetic resonance in the quantum hall regime: possible evidence for a Skyrme crystal von Desrat, W, Maude, D K, Potemski, M, Portal, J C, Wasilewski, Z R, Hill, G

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High mobility two-dimensional electron gas in AlGaN∕GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy von Skierbiszewski, C., Dybko, K., Knap, W., Siekacz, M., Krupczyński, W., Nowak, G., Boćkowski, M., Łusakowski, J., Wasilewski, Z. R., Maude, D., Suski, T., Porowski, S.

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Temperature dependence of the excitonic band gap in InxGa1-xAs/GaAs self-assembled quantum dots von ORTNER, G, SCHWAB, M, BAYER, M, PÄSSLER, R, FAFARD, S, WASILEWSKI, Z, HAWRYLAK, P, FORCHEL, A

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