Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate von Wu, Jiang, Ramsay, Andrew, Sanchez, Ana, Zhang, Yunyan, Kim, Dongyoung, Brossard, Frederic, Hu, Xian, Benamara, Mourad, Ware, Morgan E, Mazur, Yuriy I, Salamo, Gregory J, Aagesen, Martin, Wang, Zhiming, Liu, Huiyun

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Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots von Liang, Baolai, Yuan, Qing, Su, Linlin, Wang, Ying, Guo, Yingnan, Wang, Shufang, Fu, Guangsheng, Marega, Euclydes, Mazur, Yuriy I, Ware, Morgan E, Salamo, Gregory

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Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots von Yuan, Qing, Liang, Baolai, Zhou, Chuan, Wang, Ying, Guo, Yingnan, Wang, Shufang, Fu, Guangsheng, Mazur, Yuriy I., Ware, Morgan E., Salamo, Gregory J.

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Optical and structural study of deformation states in the GaN/AlN superlattices von Kolomys, Oleksandr, Tsykaniuk, Bogdan, Strelchuk, Viktor, Naumov, Andrey, Kladko, Vasyl, Mazur, Yuriy I., Ware, Morgan E., Li, Shibin, Kuchuk, Andrian, Maidaniuk, Yurii, Benamara, Mourad, Belyaev, Alexander, Salamo, Gregory J.

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Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness von Wang, Ying, Sheng, Xinzhi, Guo, Qinglin, Li, Xiaoli, Wang, Shufang, Fu, Guangsheng, Mazur, Yuriy I., Maidaniuk, Yurii, Ware, Morgan E., Salamo, Gregory J., Liang, Baolai, Huffaker, Diana L.

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Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures von Liu, Jingtao, Luo, Shiping, Liu, Xiaohui, Wang, Ying, Wang, Chunsheng, Wang, Shufang, Fu, Guangsheng, Mazur, Yuriy I., Ware, Morgan E., Salamo, Gregory J., Liang, Baolai

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Surface atomic arrangement of aluminum ultra-thin layers grown on Si(111) von Jum’h, Inshad, Abu-Safe, Husam H., Ware, Morgan E., Qattan, I. A., Telfah, Ahmad, Tavares, C. J.

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Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire von Tsykaniuk, Bogdan I., Nikolenko, Andrii S., Strelchuk, Viktor V., Naseka, Viktor M., Mazur, Yuriy I., Ware, Morgan E., DeCuir, Eric A., Sadovyi, Bogdan, Weyher, Jan L., Jakiela, Rafal, Salamo, Gregory J., Belyaev, Alexander E.

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Manipulating formation of different InGaAs/GaAs nanostructures via tailoring As4 flux von Zhang, Wen, Wang, Ying, Guo, Yingnan, Ma, Wenquan, Lee, Jihoon, Mazur, Yuriy I., Ware, Morgan E., Salamo, Gregory J., Liang, Baolai

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AlGaN/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Measurements From Line Currents von White, Thomas P., Shetty, Satish, Ware, Morgan E., Mantooth, H. Alan, Salamo, Gregory J.

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Band Offsets of the MOCVD-Grown β‑(Al0.21Ga0.79)2O3/β-Ga2O3 (010) Heterojunction von Morgan, Timothy A., Rudie, Justin, Zamani-Alavijeh, Mohammad, Kuchuk, Andrian V., Orishchin, Nazar, Alema, Fikadu, Osinsky, Andrei, Sleezer, Robert, Salamo, Gregory, Ware, Morgan E.

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Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire von Tsykaniuk, Bogdan I., Nikolenko, Andrii S., Strelchuk, Viktor V., Naseka, Viktor M., Mazur, Yuriy I., Ware, Morgan E., DeCuir, Eric A., Sadovyi, Bogdan, Weyher, Jan L., Jakiela, Rafal, Salamo, Gregory J., Belyaev, Alexander E.

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Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure von Li, Hang, Wang, Ying, Guo, Yingnan, Wang, Shufang, Fu, Guangsheng, Mazur, Yuriy I., Ware, Morgan E., Salamo, Gregory J., Liang, Baolai

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Band Offsets of the MOCVD-Grown β-(Al 0.21 Ga 0.79 ) 2 O 3 /β-Ga 2 O 3 (010) Heterojunction von Morgan, Timothy A, Rudie, Justin, Zamani-Alavijeh, Mohammad, Kuchuk, Andrian V, Orishchin, Nazar, Alema, Fikadu, Osinsky, Andrei, Sleezer, Robert, Salamo, Gregory, Ware, Morgan E

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Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs von Liu, Yao, Wang, Ying, Liang, Baolai, Guo, Qinglin, Wang, Shufang, Fu, Guangsheng, Mazur, Yuriy I, Ware, Morgan E, Salamo, Gregory J

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Site-controlled formation of InGaAs quantum nanostructures——Tailoring the dimensionality and the quantum confinement von Liang, Baolai, Wong, Ping-Show, Tran, Thai, Dorogan, Vitaliy G., Mazur, Yuriy I., Ware, Morgan E., Salamo, Gregory J., Shih, Chih-Kang, Huffaker, Diana L.

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Experimental characterization of a fully polarimetric pulsed terahertz spectroscopy system von Gurjar, Nikita, Ware, Morgan E., El-Shenawee, Magda

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Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation von Hu, Xian, Zhang, Yang, Guzun, Dorel, Ware, Morgan E., Mazur, Yuriy I., Lienau, Christoph, Salamo, Gregory J.

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Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix von Kumar, Rahul, Maidaniuk, Yurii, Kuchuk, Andrian, Saha, Samir K., Ghosh, Pijush K., Mazur, Yuriy I., Ware, Morgan E., Salamo, Gregory J.

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Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift von Kuchuk, Andrian V., de Oliveira, Fernando M., Ghosh, Pijush K., Mazur, Yuriy I., Stanchu, Hryhorii V., Teodoro, Marcio D., Ware, Morgan E., Salamo, Gregory J.

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