Effects of silicide formation on the removal of end-of-range ion implantation damage in silicon von Lur, W., Cheng, J.Y., Chu, C.H., Wang, M.H., Lee, T.C., Wann, Y.J., Chao, W.Y., Chen, L.J.

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High-k/ metal-gate stack work-function tuning by rare-earth capping layers: Interface dipole or bulk charge? von Yu, H.Y., Chang, S.Z., Aoulaiche, M., Kaczer, B., Absil, P., Adelmann, C., Hoffmann, T., Biesemans, S., Wann, C., Mii, Y.J.

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