Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on HfO2 high-K dielectric von Wu, L., Yu, H. Y., Li, X., Pey, K. L., Pan, J. S., Chai, J. W., Chiu, Y. S., Lin, C. T., Xu, J. H., Wann, H. J., Yu, X. F., Lee, D. Y., Hsu, K. Y., Tao, H. J.

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Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's von Bin Yu, Wann, C.H.J., Nowak, E.D., Noda, K., Chenming Hu

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Hot-carrier effects in thin-film fully depleted SOI MOSFET's von Ma, Z.J., Wann, H.J., Chan, M., King, J.C., Cheng, Y.C., Ko, P.K., Hu, C.

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Performance and reliability enhancement for CVD tungsten polycided CMOS transistors due to fluorine incorporation in the gate oxide von Chen, I.-C., Rodder, M., Wann, H.-J., Spratt, D.

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Nanoscale CMOS von Wong, H.-S.P., Frank, D.J., Solomon, P.M., Wann, C.H.J., Welser, J.J.

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Thermal stability of TiN metal gate prepared by atomic layer depositionor physical vapor deposition on HfO 2 high-K dielectric von Wu, L., Yu, H. Y., Li, X., Pey, K. L., Pan, J. S., Chai, J. W., Chiu, Y. S., Lin, C. T., Xu, J. H., Wann, H. J., Yu, X. F., Lee, D. Y., Hsu, K. Y., Tao, H. J.

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Design for suppression of gate-induced drain leakage in LDD MOSFETs using a quasi-two-dimensional analytical model von Parke, S.A., Moon, J.E., Wann, H.C., Ko, P.K., Hu, C.

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Effects of N/sub 2/O anneal and reoxidation on thermal oxide characteristics von Liu, Z., Wann, H.-J., Ko, P.K., Hu, C., Cheng, Y.C.

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CMOS scaling into the nanometer regime: Nanometer-scale science and technology von TAUR, Y, BUCHANAN, D. A, WONG, H.-S, CHEN, W, FRANK, D. J, ISMAIL, K. E, LO, S.-H, SAI-HALASZ, G. A, VISWANATHAN, R. G, WANN, H.-J. C, WIND, S. J

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Effects of N2O anneal and reoxidation on thermal oxide characteristics von ZHIHONG LIU, HSING-JEN WANN, KO, P. K, CHENMING HU, YIU CHUNG CHENG

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Nanoscale CMOS : Special issue on quantum devices and their applications von WONG, H.-S. P, FRANK, D. J, SOLOMON, P. M, WANN, C. H. J, WELSER, J. J

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Characterization of hot-carrier effects in thin-film fully-depleted SOI MOSFETs von Ma, Z.J., Wann, H.J., Chan, M., King, J., Cheng, Y.C., Ko, P.K., Hu, C.

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Improvement of charge trapping characteristics of N2O-annealed and reoxidized N2O-annealed thin oxides von ZHIHONG LIU, HSING-JEN WANN, KO, P. K, CHENMING HU, YIU CHUNG CHENG

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Effects of N(2)O anneal and reoxidation on thermal oxidecharacteristics von Liu, Z, Wann, H-J, Ko, P K, Hu, C, Cheng, Y C

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Method of forming semiconductor structure von RIM KERN,ELLIS-MONAGHAN JOHN J.,GREENE BRIAN J.,HENSON WILLIAM K.,PURTELL ROBERT J.,WANN CLEMENT H.,WILDMAN HORATIO S

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A 7.9/5.5 psec room/low temperature SOI CMOS von Assaderaghi, F., Rausch, W., Ajmera, A., Leobandung, E., Schepis, D., Wagner, L., Wann, H.-J., Bolam, R., Yee, D., Davari, B., Shahidi, G.

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Very high performance 50 nm CMOS at low temperature von Wind, S.J., Shi, L., Lee, K.-L., Roy, R.A., Zhang, Y., Sikorski, E., Kozlowski, P., D'emic, C., Bucchignano, J.J., Wann, H.-J., Viswanathan, R.G., Cai, J., Taur, Y.

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An accurate model of thin film SOI-MOSFET breakdown voltage von Chen, J., Assaderaghi, F., Wann, H.-J., Ko, P., Hu, C., Cheng, P., Solomon, R., Chan, T.-Y.

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Mechanical loading inhibits cartilage inflammatory signalling via an HDAC6 and IFT-dependent mechanism regulating primary cilia elongation von Fu, S., Thompson, C.L., Ali, A., Wang, W., Chapple, J.P., Mitchison, H.M., Beales, P.L., Wann, A.K.T., Knight, M.M.

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Coronary atherosclerosis in indigenous South American Tsimane: a cross-sectional cohort study von Kaplan, Hillard, Prof, Thompson, Randall C, Prof, Trumble, Benjamin C, PhD, Wann, L Samuel, MD, Allam, Adel H, Prof, Beheim, Bret, PhD, Frohlich, Bruno, Prof, Sutherland, M Linda, MD, Sutherland, James D, MD, Stieglitz, Jonathan, PhD, Rodriguez, Daniel Eid, MD, Michalik, David E, DO, Rowan, Chris J, MD, Lombardi, Guido P, MD, Bedi, Ram, PhD, Garcia, Angela R, MA, Min, James K, Prof, Narula, Jagat, Prof, Finch, Caleb E, Prof, Gurven, Michael, Prof, Thomas, Gregory S, Prof

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