High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates von Vellianitis, G., van Dal, M.J.H., Duriez, B., Lee, T.L., Passlack, M., Wann, C.H., Diaz, C.H.

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Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors von Lin, H.-K., Lin, Y.-C., Huang, F.-H., Fan, T.-W., Chiu, P.-C., Chyi, J.-I., Ko, C.-H., Kuan, T.-M., Hsieh, M.-K., Lee, W.-C., Wann, C.H.

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E-beam-evaporated Al2O3 for InAs/AlSb metal-oxide-semiconductor HEMT development von LIN, H.-K, FAN, D.-W, LEE, W.-C, WANN, C. H, LIN, Y.-C, CHIU, P.-C, CHIEN, C.-Y, LI, P.-W, CHYI, J.-I, KO, C.-H, KUAN, T.-M, HSIEH, M.-K

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A comparative study of advanced MOSFET concepts von Wann, C.H., Noda, K., Tanaka, T., Yoshida, M., Chenming Hu

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Design for suppression of gate-induced drain leakage in LDD MOSFETs using a quasi-two-dimensional analytical model von Parke, S.A., Moon, J.E., Wann, H.C., Ko, P.K., Hu, C.

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High-endurance ultra-thin tunnel oxide in MONOS device structure for dynamic memory application von Wann, H.C., Chenming Hu

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Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's von Bin Yu, Wann, C.H.J., Nowak, E.D., Noda, K., Chenming Hu

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The impact of device scaling and power supply change on CMOS gate performance von Kai Chen, Wann, H.C., Ko, P.K., Chenming Hu

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An accurate semi-empirical saturation drain current model for LDD n-MOSFET von Kai Chen, Wann, H.C., Duster, J., Pramanik, D., Nariani, S., Ko, P.K., Hu, C.

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E-beam-evaporated Al sub(2)O sub(3) for InAs/AlSb metal-oxide-semiconductor HEMT development von Lin, H-K, Fan, D-W, Lin, Y-C, Chiu, P-C, Chien, C-Y, Li, P-W, Chyi, J-I, Ko, C-H, Kuan, T-M, Hsieh, M-K, Lee, W-C, Wann, CH

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MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages von Chen, Kai, Clement Wann, H., Dunster, Jon, Ko, Ping K., Hu, Chenming, Yoshida, Makoto

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Nanoscale CMOS : Special issue on quantum devices and their applications von WONG, H.-S. P, FRANK, D. J, SOLOMON, P. M, WANN, C. H. J, WELSER, J. J

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III-V devices featuring Si transistor-like process and its heterogeneous integration on Si substrate von Ko, C.-H, Wu, C.-H, Cheng, C.-C, Lin, H.-Y, Lin, Y.-R, Wann, C H

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In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process von Xingui Zhang, Huaxin Guo, Xiao Gong, Qian Zhou, Hau-Yu Lin, You-Ru Lin, Chih-Hsin Ko, Wann, C H, Yee-Chia Yeo

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25 nm CMOS design considerations von Taur, Y., Wann, C.H., Frank, D.J.

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A new self-aligned contact technology for III-V MOSFETs von Huaxin Guo, Xingui Zhang, Hock-Chun Chin, Xiao Gong, Shao-Ming Koh, Chunlei Zhan, Guang-Li Luo, Chun-Yen Chang, Hau-Yu Lin, Chao-Hsin Chien, Zong-You Han, Shih-Chiang Huang, Chao-Ching Cheng, Chih-Hsin Ko, Wann, C H, Yee-Chia Yeo

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CMOS scaling into the nanometer regime: Nanometer-scale science and technology von TAUR, Y, BUCHANAN, D. A, WONG, H.-S, CHEN, W, FRANK, D. J, ISMAIL, K. E, LO, S.-H, SAI-HALASZ, G. A, VISWANATHAN, R. G, WANN, H.-J. C, WIND, S. J

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Mechanical loading inhibits cartilage inflammatory signalling via an HDAC6 and IFT-dependent mechanism regulating primary cilia elongation von Fu, S., Thompson, C.L., Ali, A., Wang, W., Chapple, J.P., Mitchison, H.M., Beales, P.L., Wann, A.K.T., Knight, M.M.

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Coronary atherosclerosis in indigenous South American Tsimane: a cross-sectional cohort study von Kaplan, Hillard, Prof, Thompson, Randall C, Prof, Trumble, Benjamin C, PhD, Wann, L Samuel, MD, Allam, Adel H, Prof, Beheim, Bret, PhD, Frohlich, Bruno, Prof, Sutherland, M Linda, MD, Sutherland, James D, MD, Stieglitz, Jonathan, PhD, Rodriguez, Daniel Eid, MD, Michalik, David E, DO, Rowan, Chris J, MD, Lombardi, Guido P, MD, Bedi, Ram, PhD, Garcia, Angela R, MA, Min, James K, Prof, Narula, Jagat, Prof, Finch, Caleb E, Prof, Gurven, Michael, Prof, Thomas, Gregory S, Prof

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High Prevalence of Latent Tuberculosis Infection in Patients in End-Stage Renal Disease on Hemodialysis: Comparison of QuantiFERON-TB GOLD, ELISPOT, and Tuberculin Skin Test von Lee, S. S. J, Chou, K. J, Su, I.J, Chen, Y. S, Fang, H. C, Huang, T. S, Tsai, H. C, Wann, S. R, Lin, H. H, Liu, Y. C

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