The Magnetic Penetration Depth Calculated with the Mechanism of “Close-Shell Inversion” von Shangguan, Wangzuo, Wang, Xusheng, Huang, Ziqian

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Tentative Prediction of Harmful Algal Blooms in Yangtze Estuary von Zhang, Xinfeng, Zhang, Jian, Yuan, Ying, Shangguan, Wangzuo, Huang, Ziqian, Zhang, Shuo

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Physics-based single-piece charge model for strained-Si MOSFETs von Chandrasekaran, K., Xing Zhou, Chiah, S.B., Shangguan, W., Guan Huei See

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Extraction of physical parameters of strained silicon MOSFETs from C-V measurement von Chandrasekaran, K., Xing Zhou, Siau Ben Chiah, Wangzuo Shangguan, Guan Huei See, Bera, L.K., Balasubramanian, N., Rustagi, S.C.

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Letters: Widen areas of coverage in ES&T von Wangzuo, Shangguan

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Effect of substrate doping on the capacitance-Voltage characteristics of strained-silicon pMOSFETs von Chandrasekaran, K., Xing Zhou, Chiah, S.B., Shangguan, W., Guan Huei See, Bera, L.K., Balasubramanian, N., Rustagi, S.C.

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Xsim: unified regional approach to compact modeling for next generation CMOS von Xing Zhou, Siau Ben Chiah, Karthik Chandrasekaran, Wangzuo Shangguan, Guan Huei See

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