An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs von Wu, Chunlei, Huang, Ru, Huang, Qianqian, Wang, Chao, Wang, Jiaxin, Wang, Yangyuan

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A Novel Tunnel FET Design With Stacked Source Configuration for Average Subthreshold Swing Reduction von Wu, Chunlei, Huang, Qianqian, Zhao, Yang, Wang, Jiaxin, Wang, Yangyuan, Huang, Ru

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Handbook of Integrated Circuit Industry von Wang, Yangyuan, Chi, Min-Hwa, Lou, Jesse Jen-Chung, Chen, Chun-Zhang

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A 0.4-V Low Noise Amplifier Using Forward Body Bias Technology for 5 GHz Application von WU, Dake, RU HUANG, WONG, Waisum, YANGYUAN WANG

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Design Guideline for Complementary Heterostructure Tunnel FETs With Steep Slope and Improved Output Behavior von Wu, Chunlei, Huang, Ru, Huang, Qianqian, Wang, Jiaxin, Wang, Yangyuan

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Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation von Runsheng Wang, Runsheng Wang, Jing Zhuge, Jing Zhuge, Ru Huang, Ru Huang, Yu Tian, Yu Tian, Han Xiao, Han Xiao, Liangliang Zhang, Liangliang Zhang, Chen Li, Chen Li, Xing Zhang, Xing Zhang, Yangyuan Wang, Yangyuan Wang

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Highly Power-Efficient Active-RC Filters With Wide Bandwidth-Range Using Low-Gain Push-Pull Opamps von Ye, Le, Shi, Congyin, Liao, Huailin, Huang, Ru, Wang, Yangyuan

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Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps von Guo, Shaofeng, Wang, Runsheng, Mao, Dongyuan, Wang, Yangyuan, Huang, Ru

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Highly Reconfigurable Analog Baseband for Multistandard Wireless Receivers in 65-nm CMOS von Wang, Yixiao, Ye, Le, Liao, Huailin, Huang, Ru, Wang, Yangyuan

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Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility von Wang, Runsheng, Liu, Hongwei, Huang, Ru, Zhuge, Jing, Zhang, Liangliang, Kim, Dong-Won, Zhang, Xing, Park, Donggun, Wang, Yangyuan

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Investigation of Parasitic Effects and Design Optimization in Silicon Nanowire MOSFETs for RF Applications von Zhuge, Jing, Wang, Runsheng, Huang, Ru, Zhang, Xing, Wang, Yangyuan

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Predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs von Zou, Jibin, Xu, Qiumin, Lou, Jieying, Wang, Runsheng, Huang, Ru, Wang, Yangyuan

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Resistive-Gate Field-Effect Transistor: A Novel Steep-Slope Device Based on a Metal-Insulator-Metal-Oxide Gate Stack von Huang, Qianqian, Huang, Ru, Pan, Yue, Tan, Shenghu, Wang, Yangyuan

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Record Low-Power Organic RRAM With Sub-20-nA Reset Current von Bai, Wenliang, Huang, Ru, Cai, Yimao, Tang, Yu, Zhang, Xing, Wang, Yangyuan

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Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization von Wang, Runsheng, Zhuge, Jing, Huang, Ru, Yu, Tao, Zou, Jibin, Kim, Dong-Won, Park, Donggun, Wang, Yangyuan

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A New Dynamic Selector Based on the Bipolar RRAM for the Crossbar Array Application von Huang, Yinglong, Huang, Ru, Pan, Yue, Zhang, Lijie, Cai, Yimao, Yang, Gengyu, Wang, Yangyuan

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High performance tunnel field-effect transistor by gate and source engineering von Huang, Ru, Huang, Qianqian, Chen, Shaowen, Wu, Chunlei, Wang, Jiaxin, An, Xia, Wang, Yangyuan

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A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion Region von Jin He, Chan, M., Xing Zhang, Yangyuan Wang

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Total Ionizing Dose (TID) Effects on TaOx-Based Resistance Change Memory von LIJIE ZHANG, RU HUANG, DEJIN GAO, PAN YUE, POREN TANG, FEI TAN, YIMAO CAI, YANGYUAN WANG

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High-Performance BOI FinFETs Based on Bulk-Silicon Substrate von Xu, Xiaoyan, Wang, Runsheng, Huang, Ru, Zhuge, Jing, Chen, Gang, Zhang, Xing, Wang, Yangyuan

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