Size-dependent capacitance study on InGaN-based micro-light-emitting diodes von Yang, Wei, Zhang, Shuailong, McKendry, Jonathan J. D., Herrnsdorf, Johannes, Tian, Pengfei, Gong, Zheng, Ji, Qingbin, Watson, Ian M., Gu, Erdan, Dawson, Martin D., Feng, Liefeng, Wang, Cunda, Hu, Xiaodong

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Stimulated emission related anomalous change of electrical parameters at threshold in GaN-based laser diodes von Li, Ding, Yang, Wei, Feng, Liefeng, Roth, Peter W., He, Juan, Du, Weimin, Yang, Zhijian, Wang, Cunda, Zhang, Guoyi, Hu, Xiaodong

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Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold von Feng, Liefeng, Yang, Xiufang, Li, Yang, Li, Ding, Wang, Cunda, Yao, Dongsheng, Hu, Xiaodong, Li, Hongru

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Exciton recombination in lasing contributing an opposite abrupt change of the electrical behavior near threshold between GaN- and GaAs- multi-quantum-well laser diodes von Feng, Liefeng, Wang, Shupeng, Li, Yang, Li, Ding, Wang, Cunda

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Redefinition the quasi-Fermi energy levels separation of electrons and holes inside and outside quantum wells of GaN based multi-quantum-well semiconductor laser diodes von Li, Ding, Feng, Liefeng, Yang, Wei, Yang, Xiufang, Hu, Xiaodong, Wang, Cunda

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Accurate characterization of room-temperature long range magnetic order in GaN： Mn by magnetic force microscope von Zhang, YuHao, Lin, ZhiYuan, Chen, ZhiTao, Qian, YuZhou, Yang, XueLin, Li, Ding, Zhang, FaFa, Dai, Tao, Han, BaoShan, Wang, CunDa, Zhang, GuoYi

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Opposite change trend of electrical behavior curves near the threshold between GaAs- and GaN-multi-quantum-well laser diodes von Feng, Liefeng, Wang, Shupeng, Li, Yang, Yang, Xiufang, Li, Ding, Wang, Cunda

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Template-Matching-Based Detection of Freezing of Gait Using Wearable Sensors von Xu, Cheng, He, Jie, Zhang, Xiaotong, Wang, Cunda, Duan, Shihong

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Detection of Freezing of Gait Using Template-Matching-Based Approaches von Wang, Cunda, Zhang, Xiaotong, He, Jie, Xu, Cheng, Duan, Shihong

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Well Thickness Dependence of the Internal Quantum Efficiency and Carrier Concentration in GaN-Based Multiple Quantum Well Light-Emitting Diodes von Zhao, Kun, Yang, Xiufang, Xu, Bing, Li, Ding, Wang, Cunda, Feng, Liefeng

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Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges von Cheng, Ji, Jiang, Shengxiang, Zhang, Yan, Yang, Zhijian, Wang, Cunda, Yu, Tongjun, Zhang, Guoyi

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Temperature-dependent ac current-voltage-capacitance characteristics of GaN-based light-emitting diodes under high forward bias von Yang, Wei, Li, Ding, He, Juan, Wang, Cunda, Hu, Xiaodong

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Stimulated emission in GaN-based laser diodes far below the threshold region von Li, Ding, Zong, Hua, Yang, Wei, Feng, Liefeng, He, Juan, Du, Weimin, Wang, Cunda, Xie, Ya-Hong, Yang, Zhijian, Shen, Bo, Zhang, Guoyi, Hu, Xiaodong

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GaN nanorod array as a precursor to enhance GaN:Mn ferromagnetism von Ji, Cheng, Jiang, Shengxiang, Zhang, Yan, Xing, Haiyin, Yang, Zhijian, Wang, Cunda, Yu, Tongjun, Zhang, Guoyi

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Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer von Wang, Lei, Li, Rui, Li, Ding, Liu, Ningyang, Liu, Lei, Chen, Weihua, Wang, Cunda, Yang, Zhijian, Hu, Xiaodong

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Unifying Dual-Space Embedding for Entity Alignment via Contrastive Learning von Wang, Cunda, Wang, Weihua, Liang, Qiuyu, Bao, Feilong, Gao, Guanglai

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Human Motion Monitoring Platform Based on Positional Relationship and Inertial Features von He, Jie, Wang, Cunda, Xu, Cheng, Duan, Shihong

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Strain modulation-enhanced Mg acceptor activation efficiency of Al 0.14 Ga 0.86 N / GaN superlattices with AlN interlayer von Wang, Lei, Li, Rui, Li, Ding, Liu, Ningyang, Liu, Lei, Chen, Weihua, Wang, Cunda, Yang, Zhijian, Hu, Xiaodong

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Precise Electrical Characterization of LEDs with Wide-Band Material von Wang, Cun Da, Feng, Lie Feng, Xing, Qiong Yong, Li, Yang

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Electrical Behaviors of LEDs Prepared by Wide-Band GaN Material von Wang, Cun Da, Feng, Lie Feng, Li, Ding, Li, Yang

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