Near‐Complete Elimination of Size‐Dependent Efficiency Decrease in GaN Micro‐Light‐Emitting Diodes von Zhu, Jun, Takahashi, Tokio, Ohori, Daisuke, Endo, Kazuhiko, Samukawa, Seiji, Shimizu, Mitsuaki, Wang, Xue-Lun

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Dynamic characteristics and device degradation of GaN-based vertical-cavity surface-emitting laser with an AlInN/GaN distributed Bragg reflector von Ide, Toshihide, Iida, Ryousuke, Takeuchi, Tetsuya, Wang, Xue-Lun, Takada, Noriyuki, Shimizu, Mitsuaki

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High‐Efficiency, High‐Power AlGaInP Thin‐Film LEDs with Micron‐Sized Truncated Cones as Light‐Extraction Structures von Wang, Xue‐lun, Kumagai, Naoto, Hao, Guo‐dong

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Fabrication of submicron active-region-buried GaN hexagonal frustum structures by selective area growth for directional micro-LEDs von Kumagai, Naoto, Takahashi, Tokio, Yamada, Hisashi, Cong, Guangwei, Wang, Xue-Lun, Shimizu, Mitsuaki

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Measurements of nitrogen atom density in a microwave‐excited plasma jet produced under moderate pressures von Kim, Jaeho, Takeda, Keigo, Itagaki, Hirotomo, Wang, Xue‐lun, Hirose, Shingo, Ogiso, Hisato, Shimizu, Tetsuji, Kumagai, Naoto, Tsutsumi, Takayoshi, Kondo, Hiroki, Hori, Masaru, Sakakita, Hajime

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Epitaxial growth and optical properties of semiconductor quantum wires von Wang, Xue-Lun, Voliotis, Valia

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Controlling the directionality of spontaneous emission by evanescent wave coupling von Wang, Xue-Lun, Hao, Guo-Dong, Toda, Naoya

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Enhancement of light-extraction efficiency in AlGaInP light-emitting diodes using evanescent wave coupling effect von Hao, Guo-Dong, Wang, Xue-Lun

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Synthesis and insecticidal activity of novel benzothiazole derivatives containing the coumarin moiety von Si, Wei-Jie, Chen, Min, Wang, Xue-Lun, Wang, Meng-Qi, Jiao, Jian, Fu, Xin-Can, Yang, Chun-Long

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Light Source Position Dependence of Evanescent Wave Coupling Effect in Narrow GaAs/AlGaAs Ridge Structure von Wang, Xue-Lun, Takahashi, Tokio

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Ammonia-free epitaxy of single-crystal InN using a plasma-integrated gas-injection module von Sakakita, Hajime, Kumagai, Naoto, Shimizu, Tetsuji, Kim, Jaeho, Yamada, Hisashi, Wang, Xue-lun

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Enhanced light extraction in GaN-based light-emitting diodes by evanescent wave coupling effect von Hao, Guo-Dong, Jahir, Ahmed Mohammed, Takahashi, Tokio, Shimizu, Mitsuaki, Wang, Xue-Lun, Kishi, Hiroyuki, Hayashi, Yukiko, Takeguchi, Keigo

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Enhancement of the evanescent wave coupling effect in a sub-wavelength-sized GaAs/AlGaAs ridge structure by low-refractive-index surface layers von Wang, Xue-Lun, Hao, Guo-Dong, Takahashi, Tokio

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Fabrication of ridge-shaped AlGaInP/GaInP quantum well structure for observation of evanescent wave coupling effect von Hao, Guo-Dong, Seo, JongUk, Wang, Xue-Lun

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Non-linear optics on an exciton state in a single quantum dot von Melet, Romain, Grousson, Roger, Voliotis, Valia, Wang, Xue-Lun

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Enhancement of light extraction efficiency by evanescent wave coupling effect in ridge-shaped AlGaInP/GaInP quantum wells von Hao, Guo-Dong, Wang, Xue-Lun

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Coherent control of semiconductor quantum wire by high-resolution and stable Michelson interferometer von Okada, Takumi, Komori, Kazuhiro, Wang, Xue-Lun, Ogura, Mutsuo, Tsurumachi, Noriaki

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Effects of N2 and NH3 plasma exposure on the surface topography of p-GaN under quasi-atmospheric pressure von Kumagai, Naoto, Itagaki, Hirotomo, Kim, Jaeho, Ogiso, Hisato, Wang, Xue-lun, Hirose, Shingo, Sakakita, Hajime

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Flow rate modulation epitaxy of AlGaAs/GaAs quantum wires on nonplanar substrate von Wang, Xue-Lun, Ogura, Mutsuo, Matsuhata, Hirofumi

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Carrier capture efficiency of AlGaAs/GaAs quantum wires affected by composition nonuniformity of an AlGaAs barrier layer von Wang, Xue-Lun, Ogura, Mutsuo, Matsuhata, Hirofumi

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