Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers von Yang, X., Jurkovic, M. J., Heroux, J. B., Wang, W. I.

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Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy von Chou, C. Y., Torfi, A., Pei, C., Wang, W. I.

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Photoreflectance spectroscopy of strained (In)GaAsN/GaAs multiple quantum wells von Héroux, J. B., Yang, X., Wang, W. I.

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Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy von Li, L. K., Jurkovic, M. J., Wang, W. I., Van Hove, J. M., Chow, P. P.

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Highly periodic, three-dimensionally arranged InGaAsN : Sb quantum dot arrays fabricated nonlithographically for optical devices von Kouklin, N, Chik, H, Liang, J, Tzolov, M, Xu, J M, Heroux, J B, Wang, W I

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Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting von Chou, C. Y., Torfi, A., Wang, W. I.

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Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers von Li, W., Héroux, J. B., Shao, H., Wang, W. I.

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Interband tunneling in polytype GaSb/AlSb/InAs heterostructures von LUO, L. F, BERESFORD, R, WANG, W. I

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Room-temperature InAsSb photovoltaic detectors for mid-infrared applications von Shao, H., Li, W., Torfi, A., Moscicka, D., Wang, W.I.

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GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen source von Yang, Z., Li, L. K., Wang, W. I.

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Strain-compensated InGaAsSb multiple quantum-wells with digital AlGaAsSb barriers for midinfrared lasers von Li, W., Shao, H., Moscicka, D., Unuvar, T., Wang, W.I.

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High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6 μm von Shao, H., Torfi, A., Li, W., Moscicka, D., Wang, W.I.

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High electron mobility AlGaN/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxy von Li, L. K., Turk, B., Wang, W. I., Syed, S., Simonian, D., Stormer, H. L.

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Doping of ZnTe by molecular beam epitaxy von Tao, I. W., Jurkovic, M., Wang, W. I.

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629 Hemodynamic and Clinical Effects of Tracleer Therapy for Persistent Pulmonary Hypertension after Continuous Flow Left Ventricular Assist Device (LVAD) von Hadi, M.A, Wang, I.-W, Schilling, J

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Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100) von WANG, W. I

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Risk factors for ischaemic and intracerebral haemorrhagic stroke in 22 countries (the INTERSTROKE study): a case-control study von O'Donnell, Martin J, Dr, Xavier, Denis, Prof, Liu, Lisheng, Prof, Zhang, Hongye, Prof, Chin, Siu Lim, Rao-Melacini, Purnima, MSc, Rangarajan, Sumathy, MSc, Islam, Shofiqul, MSc, Pais, Prem, Prof, McQueen, Matthew J, Prof, Mondo, Charles, MD, Damasceno, Albertino, Prof, Lopez-Jaramillo, Patricio, Prof, Hankey, Graeme J, Prof, Dans, Antonio L, Prof, Yusoff, Khalid, Prof, Truelsen, Thomas, DMSc, Diener, Hans-Christoph, Prof, Sacco, Ralph L, Prof, Ryglewicz, Danuta, Prof, Czlonkowska, Anna, Prof, Weimar, Christian, Prof, Wang, Xingyu, Prof, Yusuf, Salim, Prof

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Normal incidence infrared photodetectors using intersubband transitions in GaSb L-valley quantum wells von ZHANG, Y, BARUCH, N, WANG, W. I

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Treatment of Secondary Pulmonary Hypertension with Bosentan after Left Ventricular Assist Device Implantation von LaRue, S.J, Garcia-Cortes, R, Ray, S, Ravichandran, A, Ewald, G.A, Wang, I.-W, Schilling, J

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CENDL-3.2: The new version of Chinese general purpose evaluated nuclear data library von Ge, Zhigang, Xu, Ruirui, Wu, Haicheng, Zhang, Yue, Chen, Guochang, Jin, Yongli, Shu, Nengchuan, Chen, Yongjing, Tao, Xi, Tian, Yuan, Liu, Ping, Qian, Jing, Wang, Jimin, Zhang, Huanyu, Liu, Lile, Huang, Xiaolong

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