Observation of the unexpected morphology of graphene wrinkle on copper substrate von Wang, Wen, Yang, Shudu, Wang, Ashu

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Temperature effects on the nano-friction across exposed atomic step edges von Wang, Wen, Wang, Ashu, Zeng, Lingyan

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Simple and Accurate Method to Estimate Channel Temperature and Thermal Resistance in AlGaN/GaN HEMTs von Martin-Horcajo, Sara, Ashu Wang, Romero, Maria-Fatima, Tadjer, Marko Jak, Calle, Fernando

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Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs von Ashu Wang, Tadjer, Marko J., Anderson, Travis J., Baranyai, Roland, Pomeroy, James W., Feygelson, Tatyana I., Hobart, Karl D., Pate, Bradford B., Calle, Fernando, Kuball, Martin

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Three-dimensional steady and transient fully coupled electro-thermal simulation of AlGaN/GaN high electron mobility transistors: Effects of lateral heat dissipation and thermal cro... von Wang, Ashu, Zeng, Lingyan, Wang, Wen

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Modification of strain and 2DEG density induced by wafer bending of AlGaN/GaN heterostructure: Influence of edges caused by processing von Wang, Ashu, Zeng, Lingyan, Wang, Wen, Calle, Fernando

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Effects of substrate on the nanoscale friction of graphene von Wang, Wen, Zhang, Yu, Wang, Ashu

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Temperature dependence of nanoscale friction on topological insulator Bi2Se3 surfaces von Wang, Wen, Lei, Haocheng, Wang, Ashu

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Temperature dependence of nanoscale friction on topological insulator Bi 2 Se 3 surfaces von Wang, Wen, Lei, Haocheng, Wang, Ashu

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Temperature dependence of nanoscale friction on topological insulator Bi2Se3surfaces von Wang, Wen, Lei, Haocheng, Wang, Ashu

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Quantum tunneling dynamics using entangled trajectories : general potentials von ASHU WANG, YUJUN ZHENG, MARTENS, Craig C, WEIYI REN

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Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs von Wang, Ashu, Zeng, Lingyan, Wang, Wen

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Study on the GaN/AlGaN Piezotronic Effect Applied in Pressure Sensors von Wang, Ashu, Zeng, Lingyan, Wang, Wen

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Static and dynamic simulation studies on the AlGaN/GaN pressure sensor von Wang, Ashu, Zeng, Lingyan, Wang, Wen, Luo, Zhenghua

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Simulation of Gate Leakage Current of AlGaN/GaN HEMTs: Effects of the Gate Edges and Self-Heating von Wang, Ashu, Zeng, Lingyan, Wang, Wen

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Surface donor states-dependent bare surface barrier height and 2DEG density of AlGaN/GaN heterostructure exerted uniaxial stress von Wang, Ashu, Zeng, Lingyan, Wang, Wen

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Strain induced highly oriented graphene wrinkles von Wang, Wen, Yang, Shudu, Wang, Ashu

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Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure von Cucak, Dejana, Vasic, Miroslav, Garcia, Oscar, Angel Oliver, Jesus, Alou, Pedro, Antonio Cobos, Jose, Wang, Ashu, Martin-Horcajo, Sara, Romero, Maria Fatima, Calle, Fernando

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Simulation of temperature and electric field-dependent barrier traps effects in AlGaN GaN HEMTs von Wang, Ashu, Martin-Horcajo, Sara, Tadjer, Marko J, Calle, Fernando

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Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs : GaN ELECTRONIC DEVICES von WANG, Ashu, TADJER, Marko J, ANDERSON, Travis J, BARANYAI, Roland, POMEROY, James W, FEYGELSON, Tatyana I, HOBART, Karl D, PATE, Bradford B, CALLE, Fernando, KUBALL, Martin

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